- Series：
-
- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Mounting Type：
-
- Memory Size：
-
- Memory Format：
-
- Clock Frequency：
-
- Write Cycle Time - Word, Page：
-
- Conditions sélectionnées:
Découvrez les produits 193
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Memory Size | Technology | Memory Format | Clock Frequency | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Memory Size | Technology | Memory Format | Clock Frequency | Write Cycle Time - Word, Page | |
|
|
|
Maxim Integrated |
133
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28EDIP
|
Tube | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 64Kb (8K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 85ns | ||
|
|
|
Maxim Integrated |
84
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28EDIP
|
Tube | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 64Kb (8K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 85ns | ||
|
|
|
Maxim Integrated |
12
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 256K PARALLEL 28EDIP
|
Tube | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 256Kb (32K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 85ns | ||
|
|
|
Maxim Integrated |
35
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 1M PARALLEL 32EDIP
|
Tube | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | 1Mb (128K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 85ns | ||
|
|
|
Maxim Integrated |
61
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 2M PARALLEL 32EDIP
|
Tube | - | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | 2Mb (256K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 85ns | ||
|
|
|
Maxim Integrated |
37
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 1M PARALLEL 32EDIP
|
Tube | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | 1Mb (128K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 85ns | ||
|
|
|
Micron Technology Inc. |
1
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 128M PARALLEL 88SCSP
|
Tray | StrataFlash | 1.7 V ~ 2 V | -40°C ~ 85°C (TC) | 88-TFBGA，CSPBGA | 88-SCSP (8x10) | Surface Mount | 128Mb (8M x 16) | FLASH - NOR | Flash | 52MHz | 85ns | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 24 MPQ: 1
|
IC NVSRAM 256K PARALLEL 28EDIP
|
Tube | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 256Kb (32K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 85ns | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 12 MPQ: 1
|
IC NVSRAM 4M PARALLEL 32DIP
|
Tray | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 32-DIP Module (0.61"，15.49mm) | 32-DIP Module (18.42x42.8) | Through Hole | 4Mb (512K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 85ns | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 12 MPQ: 1
|
IC NVSRAM 2M PARALLEL 32DIP
|
Tube | - | 4.75 V ~ 5.5 V | 0°C ~ 70°C (TA) | 32-DIP Module (0.61"，15.49mm) | 32-DIP Module (18.42x52.96) | Through Hole | 2Mb (256K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 85ns | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 20 MPQ: 1
|
IC NVSRAM 2M PARALLEL 32DIP
|
Tray | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 32-DIP Module (0.61"，15.49mm) | 32-DIP Module (18.42x52.96) | Through Hole | 2Mb (256K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 85ns | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 24 MPQ: 1
|
IC NVSRAM 1M PARALLEL 32DIP
|
Tray | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 32-DIP Module (0.61"，15.49mm) | 32-DIP Module (18.42x42.8) | Through Hole | 1Mb (128K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 85ns | ||
|
|
|
Texas Instruments |
Enquête
|
- |
-
|
MOQ: 28 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28DIP
|
Tray | - | 4.75 V ~ 5.5 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.61"，15.49mm) | 28-DIP Module (18.42x37.72) | Through Hole | 64Kb (8K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 85ns | ||
|
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 324 MPQ: 1
|
IC EPROM 512K PARALLEL 44PLCC
|
Tube | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TC) | 44-LCC (J-Lead) | 44-PLCC (16.59x16.59) | Surface Mount | 512Kb (32K x 16) | EPROM - OTP | EPROM | - | - | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 36 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28EDIP
|
Tube | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 64Kb (8K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 85ns | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 36 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28EDIP
|
Tube | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 64Kb (8K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 85ns | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 36 MPQ: 1
|
IC NVSRAM 256K PARALLEL 28EDIP
|
Tube | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 256Kb (32K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 85ns | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 24 MPQ: 1
|
IC NVSRAM 256K PARALLEL 28EDIP
|
Tube | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 28-DIP Module (0.600"，15.24mm) | 28-EDIP | Through Hole | 256Kb (32K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 85ns | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 22 MPQ: 1
|
IC NVSRAM 1M PARALLEL 32EDIP
|
Tube | - | 4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | 1Mb (128K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 85ns | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 22 MPQ: 1
|
IC NVSRAM 1M PARALLEL 32EDIP
|
Tube | - | 4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 32-DIP Module (0.600"，15.24mm) | 32-EDIP | Through Hole | 1Mb (128K x 8) | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 85ns |
