- Voltage - Supply：
-
- Operating Temperature：
-
- Package / Case：
-
- Supplier Device Package：
-
- Memory Size：
-
- Clock Frequency：
-
- Conditions sélectionnées:
Découvrez les produits 242
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Memory Size | Clock Frequency | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Memory Size | Clock Frequency | |
|
|
|
ISSI，Integrated Silicon Solution Inc |
472
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 84TWBGA
|
Tray | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | 84-TFBGA | 84-TWBGA (8x12.5) | 512Mb (32M x 16) | 333MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
198
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 2G PARALLEL 84TWBGA
|
Tray | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 84-TFBGA | 84-TWBGA (8x12.5) | 2Gb (128M x 16) | 333MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
220
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 2G PARALLEL 60TWBGA
|
Tray | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 60-TFBGA | 60-TWBGA (8x10.5) | 2Gb (256M x 8) | 333MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
250
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 2G PARALLEL 60TWBGA
|
Tray | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | 60-TFBGA | 60-TWBGA (8x10.5) | 2Gb (256M x 8) | 333MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
30
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 60TWBGA
|
Tray | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | 60-TFBGA | 60-TWBGA (8x10.5) | 1Gb (128M x 8) | 333MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
7
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 84TWBGA
|
Tray | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | 84-TFBGA | 84-TWBGA (8x12.5) | 1Gb (64M x 16) | 333MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 84TWBGA
|
Tray | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | 84-TFBGA | 84-TWBGA (8x12.5) | 1Gb (64M x 16) | 333MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
16
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 60TWBGA
|
Tray | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 60-TFBGA | 60-TWBGA (8x10.5) | 1Gb (128M x 8) | 333MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
23
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 2G PARALLEL 84TWBGA
|
Tray | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | 84-TFBGA | 84-TWBGA (8x12.5) | 2Gb (128M x 16) | 333MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 256M PARALLEL 84TWBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | 84-TFBGA | 84-TWBGA (8x12.5) | 256Mb (16M x 16) | 333MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 627 MPQ: 1
|
IC DRAM 256M PARALLEL 84TWBGA
|
Tray | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | 84-TFBGA | 84-TWBGA (8x12.5) | 256Mb (16M x 16) | 333MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 512M PARALLEL 84TWBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | 84-TFBGA | 84-TWBGA (8x12.5) | 512Mb (32M x 16) | 333MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 418 MPQ: 1
|
IC DRAM 512M PARALLEL 84TWBGA
|
Tray | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | 84-TFBGA | 84-TWBGA (8x12.5) | 512Mb (32M x 16) | 333MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 1G PARALLEL 84TWBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | 0°C ~ 70°C (TA) | 84-TFBGA | 84-TWBGA (8x12.5) | 1Gb (64M x 16) | 333MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 512M PARALLEL 84TWBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TA) | 84-TFBGA | 84-TWBGA (8x12.5) | 512Mb (32M x 16) | 333MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 256M PARALLEL 84TWBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | 84-TFBGA | 84-TWBGA (8x12.5) | 256Mb (16M x 16) | 333MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 209 MPQ: 1
|
IC DRAM 256M PARALLEL 84TWBGA
|
Tray | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | 84-TFBGA | 84-TWBGA (8x12.5) | 256Mb (16M x 16) | 333MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 512M PARALLEL 333MHZ
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | 84-TFBGA | 84-WBGA (8x12.5) | 512Mb (32M x 16) | 333MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 256M PARALLEL 84TWBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | -40°C ~ 85°C (TA) | 84-TFBGA | 84-TWBGA (8x12.5) | 256Mb (16M x 16) | 333MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 512M PARALLEL 333MHZ
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | -40°C ~ 105°C (TA) | 84-TFBGA | 84-TWBGA (8x12.5) | 512Mb (32M x 16) | 333MHz |
