- Voltage - Supply：
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- Operating Temperature：
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- Supplier Device Package：
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- Technology：
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- Conditions sélectionnées:
Découvrez les produits 21
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Memory Size | Technology | Memory Format | Clock Frequency | Write Cycle Time - Word, Page | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Memory Size | Technology | Memory Format | Clock Frequency | Write Cycle Time - Word, Page | |
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Winbond Electronics |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC DRAM 16M PARALLEL 50TSOP II
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Tape & Reel (TR) | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 50-TSOP (0.400"，10.16mm Width) | 50-TSOP II | 16Mb (1M x 16) | SDRAM | DRAM | 200MHz | - | ||
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Winbond Electronics |
Enquête
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- |
-
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MOQ: 117 MPQ: 1
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IC DRAM 16M PARALLEL 50TSOP II
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Tray | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 50-TSOP (0.400"，10.16mm Width) | 50-TSOP II | 16Mb (1M x 16) | SDRAM | DRAM | 200MHz | - | ||
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Winbond Electronics |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC DRAM 128M PARALLEL 54TSOP
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Tape & Reel (TR) | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-TSOP (0.400"，10.16mm Width) | 54-TSOP II | 128Mb (8M x 16) | SDRAM | DRAM | 200MHz | - | ||
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Winbond Electronics |
Enquête
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- |
-
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MOQ: 108 MPQ: 1
|
IC DRAM 128M PARALLEL 54TSOP
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Tube | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-TSOP (0.400"，10.16mm Width) | 54-TSOP II | 128Mb (8M x 16) | SDRAM | DRAM | 200MHz | - | ||
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Alliance Memory，Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC DRAM 64M PARALLEL 54TSOP
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Tape & Reel (TR) | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-TSOP (0.400"，10.16mm Width) | 54-TSOP II | 64Mb (4M x 16) | SDRAM | DRAM | 200MHz | 2ns | ||
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Alliance Memory，Inc. |
Enquête
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- |
-
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MOQ: 108 MPQ: 1
|
IC DRAM 64M PARALLEL 54TSOP
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Tray | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-TSOP (0.400"，10.16mm Width) | 54-TSOP II | 64Mb (4M x 16) | SDRAM | DRAM | 200MHz | 2ns | ||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 72 MPQ: 1
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IC SRAM 4.5M PARALLEL 100TQFP
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Tray | 3.15 V ~ 3.6 V | 0°C ~ 70°C (TA) | 100-LQFP | 100-TQFP (14x20) | 4.5Mb (128K x 36) | SRAM - Synchronous | SRAM | 100MHz | - | ||
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Cypress Semiconductor Corp |
Enquête
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- |
-
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MOQ: 360 MPQ: 1
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IC SRAM 4.5M PARALLEL 100TQFP
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Tray | 3.135 V ~ 3.6 V | 0°C ~ 70°C (TA) | 100-LQFP | 100-TQFP (14x20) | 4.5Mb (256K x 18) | SRAM - Synchronous | SRAM | 100MHz | - | ||
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Micron Technology Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
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IC DRAM 64M PARALLEL 86TSOP II
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Tray | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 86-TFSOP (0.400"，10.16mm Width) | 86-TSOP II | 64Mb (2M x 32) | SDRAM | DRAM | 200MHz | - | ||
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Micron Technology Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC DRAM 64M PARALLEL 86TSOP II
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Tape & Reel (TR) | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 86-TFSOP (0.400"，10.16mm Width) | 86-TSOP II | 64Mb (2M x 32) | SDRAM | DRAM | 200MHz | - | ||
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Micron Technology Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC DRAM 64M PARALLEL 86TSOP II
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Tray | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 86-TFSOP (0.400"，10.16mm Width) | 86-TSOP II | 64Mb (2M x 32) | SDRAM | DRAM | 200MHz | - | ||
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Winbond Electronics |
Enquête
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- |
-
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MOQ: 108 MPQ: 1
|
IC DRAM 128M PARALLEL 54TSOP
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Tray | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-TSOP (0.400"，10.16mm Width) | 54-TSOP II | 128Mb (8M x 16) | SDRAM | DRAM | 200MHz | - | ||
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Micron Technology Inc. |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
|
IC DRAM 64M PARALLEL 86TSOP II
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Tape & Reel (TR) | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 86-TFSOP (0.400"，10.16mm Width) | 86-TSOP II | 64Mb (2M x 32) | SDRAM | DRAM | 200MHz | - | ||
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Micron Technology Inc. |
Enquête
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- |
-
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MOQ: 1080 MPQ: 1
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IC DRAM 64M PARALLEL 86TSOP II
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Tray | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 86-TFSOP (0.400"，10.16mm Width) | 86-TSOP II | 64Mb (2M x 32) | SDRAM | DRAM | 200MHz | - | ||
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Insignis Technology Corporation |
2,000
|
3 jours |
-
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MOQ: 1000 MPQ: 1
|
IC SDRAM 128MBIT 200MHZ 54TSOP
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Tape & Reel (TR) | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-TSOP (0.400"，10.16mm Width) | 54-TSOP II | 128Mb (8M x 16) | SDRAM | DRAM | 200MHz | 10ns | |||
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Insignis Technology Corporation |
2,000
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC SDRAM 128MBIT 200MHZ 54TSOP
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Cut Tape (CT) | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-TSOP (0.400"，10.16mm Width) | 54-TSOP II | 128Mb (8M x 16) | SDRAM | DRAM | 200MHz | 10ns | |||
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Insignis Technology Corporation |
2,000
|
3 jours |
-
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MOQ: 1 MPQ: 1
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IC SDRAM 128MBIT 200MHZ 54TSOP
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- | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 54-TSOP (0.400"，10.16mm Width) | 54-TSOP II | 128Mb (8M x 16) | SDRAM | DRAM | 200MHz | 10ns | |||
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Insignis Technology Corporation |
1,000
|
3 jours |
-
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MOQ: 1000 MPQ: 1
|
IC SDRAM 256MBIT 200MHZ 54TSOP
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Tape & Reel (TR) | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-TSOP (0.400"，10.16mm Width) | 54-TSOP II | 256Mb (16M x 16) | SDRAM | DRAM | 200MHz | 10ns | |||
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Insignis Technology Corporation |
1,878
|
3 jours |
-
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MOQ: 1 MPQ: 1
|
IC SDRAM 256MBIT 200MHZ 54TSOP
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Cut Tape (CT) | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-TSOP (0.400"，10.16mm Width) | 54-TSOP II | 256Mb (16M x 16) | SDRAM | DRAM | 200MHz | 10ns | |||
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Insignis Technology Corporation |
1,878
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SDRAM 256MBIT 200MHZ 54TSOP
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- | 3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 54-TSOP (0.400"，10.16mm Width) | 54-TSOP II | 256Mb (16M x 16) | SDRAM | DRAM | 200MHz | 10ns |
