Memory Format:
Write Cycle Time - Word, Page:
Conditions sélectionnées:
Découvrez les produits 549
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Memory Size Technology Memory Format Clock Frequency Write Cycle Time - Word, Page
IS42S16100H-7TLI-TR
ISSI,Integrated Silicon Solution Inc
2,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tape & Reel (TR) - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 50-TSOP (0.400",10.16mm Width) 50-TSOP II 16Mb (1M x 16) SDRAM DRAM 143MHz -
IS42S16100H-7TLI-TR
ISSI,Integrated Silicon Solution Inc
2,202
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Cut Tape (CT) - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 50-TSOP (0.400",10.16mm Width) 50-TSOP II 16Mb (1M x 16) SDRAM DRAM 143MHz -
IS42S16100H-7TLI-TR
ISSI,Integrated Silicon Solution Inc
2,202
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
- - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 50-TSOP (0.400",10.16mm Width) 50-TSOP II 16Mb (1M x 16) SDRAM DRAM 143MHz -
IS42S16100H-7TL
ISSI,Integrated Silicon Solution Inc
1,017
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tray - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 50-TSOP (0.400",10.16mm Width) 50-TSOP II 16Mb (1M x 16) SDRAM DRAM 143MHz -
IS43LR16320B-6BLI
ISSI,Integrated Silicon Solution Inc
205
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 60TFBGA
Tray - 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 60-TFBGA 60-TFBGA (8x10) 512Mb (32M x 16) SDRAM - Mobile LPDDR DRAM 166MHz 12ns
IS43LR32160B-6BLI
ISSI,Integrated Silicon Solution Inc
234
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 90TFBGA
Tray - 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 90-TFBGA 90-TFBGA (8x13) 512Mb (16M x 32) SDRAM - Mobile LPDDR DRAM 166MHz 12ns
AS4C64M4SA-7TCN
Alliance Memory,Inc.
108
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 54TSOP
Tray - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 54-TSOP (0.400",10.16mm Width) 54-TSOP II 256Mb (64M x 4) SDRAM - DDR DRAM 143MHz -
AS4C32M8SA-6TIN
Alliance Memory,Inc.
123
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 54TSOP
Tray - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 54-TSOP (0.400",10.16mm Width) 54-TSOP II 256Mb (32M x 8) SDRAM DRAM 166MHz -
AS4C4M32MSA-6BIN
Alliance Memory,Inc.
190
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 128M PARALLEL 90FBGA
Tray - 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 90-VFBGA 90-FBGA (8x13) 128Mb (4M x 32) SDRAM - Mobile DRAM 166MHz -
AS4C16M16MSA-6BIN
Alliance Memory,Inc.
104
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 54FBGA
Tray - 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 54-VFBGA 54-FBGA (8x8) 256Mb (16M x 16) SDRAM - Mobile SDRAM DRAM 166MHz -
AS4C32M16MSA-6BIN
Alliance Memory,Inc.
255
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 54FBGA
Tray - 1.7 V ~ 1.95 V -40°C ~ 85°C (TJ) 54-VFBGA 54-FBGA (8x8) 512Mb (32M x 16) SDRAM - Mobile SDRAM DRAM 166MHz -
IS42S16100H-7TLI
ISSI,Integrated Silicon Solution Inc
897
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tray - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 50-TSOP (0.400",10.16mm Width) 50-TSOP II 16Mb (1M x 16) SDRAM DRAM 143MHz -
AS4C2M32SA-7TCN
Alliance Memory,Inc.
73
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 64M PARALLEL 86TSOP II
Tray - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 86-TFSOP (0.400",10.16mm Width) 86-TSOP II 64Mb (2M x 32) SDRAM DRAM 143MHz 2ns
AS4C32M8SA-7TCN
Alliance Memory,Inc.
66
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 54TSOP
Tray - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 54-TSOP (0.400",10.16mm Width) 54-TSOP II 256Mb (32M x 8) SDRAM DRAM 143MHz -
AS4C2M32S-6TIN
Alliance Memory,Inc.
660
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 64M PARALLEL 86TSOP II
Tray - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 86-TFSOP (0.400",10.16mm Width) 86-TSOP II 64Mb (2M x 32) SDRAM DRAM 166MHz 2ns
AS4C2M32SA-6TCN
Alliance Memory,Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 64M PARALLEL 86TSOP II
Tray - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 86-TFSOP (0.400",10.16mm Width) 86-TSOP II 64Mb (2M x 32) SDRAM DRAM 166MHz 2ns
AS4C2M32SA-6TIN
Alliance Memory,Inc.
2
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 64M PARALLEL 86TSOP II
Tray - 3 V ~ 3.6 V -40°C ~ 85°C (TA) 86-TFSOP (0.400",10.16mm Width) 86-TSOP II 64Mb (2M x 32) SDRAM DRAM 166MHz 2ns
AS4C8M32MSA-6BIN
Alliance Memory,Inc.
22
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 90FBGA
Tray - 1.14 V ~ 1.95 V -40°C ~ 85°C (TA) 90-VFBGA 90-FBGA (8x13) 256Mb (8M x 32) SDRAM - Mobile DRAM 166MHz 15ns
IS42S16100H-7TL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tape & Reel (TR) - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 50-TSOP (0.400",10.16mm Width) 50-TSOP II 16Mb (1M x 16) SDRAM DRAM 143MHz -
IS42S16100H-6TL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 16M PARALLEL 50TSOP II
Tape & Reel (TR) - 3 V ~ 3.6 V 0°C ~ 70°C (TA) 50-TSOP (0.400",10.16mm Width) 50-TSOP II 16Mb (1M x 16) SDRAM DRAM 166MHz -