- Voltage - Supply：
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- Operating Temperature：
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- Package / Case：
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- Supplier Device Package：
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- Memory Size：
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- Conditions sélectionnées:
Découvrez les produits 106
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Memory Size | Write Cycle Time - Word, Page | |
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Memory Size | Write Cycle Time - Word, Page | |
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Micron Technology Inc. |
Enquête
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-
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MOQ: 2000 MPQ: 1
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IC DRAM 4G PARALLEL 1.2GHZ
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Tape & Reel (TR) | 1.14 V ~ 1.26 V | -40°C ~ 95°C (TC) | - | - | - | 4Gb (256M x 16) | - | ||
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Micron Technology Inc. |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
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IC DRAM 16G PARALLEL 1.2GHZ
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Tape & Reel (TR) | 1.14 V ~ 1.26 V | 0°C ~ 95°C (TC) | - | - | - | 16Gb (2G x 8) | - | ||
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Micron Technology Inc. |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
|
IC DRAM 16G PARALLEL 1.2GHZ
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Tape & Reel (TR) | 1.14 V ~ 1.26 V | 0°C ~ 95°C (TC) | - | - | - | 16Gb (4G x 4) | - | ||
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Micron Technology Inc. |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
|
IC DRAM 32G PARALLEL 1.2GHZ
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Tape & Reel (TR) | 1.14 V ~ 1.26 V | 0°C ~ 95°C (TC) | - | - | - | 32Gb (4G x 8) | - | ||
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Micron Technology Inc. |
Enquête
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- |
-
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MOQ: 1020 MPQ: 1
|
IC DRAM 8G PARALLEL 1.2GHZ
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- | 1.14 V ~ 1.26 V | 0°C ~ 95°C (TC) | - | - | - | 8Gb (512M x 16) | - | ||
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Micron Technology Inc. |
Enquête
|
- |
-
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MOQ: 1020 MPQ: 1
|
IC DRAM 8G PARALLEL 1.2GHZ
|
- | 1.14 V ~ 1.26 V | -40°C ~ 95°C (TC) | - | - | - | 8Gb (512M x 16) | - | ||
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Micron Technology Inc. |
Enquête
|
- |
-
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MOQ: 1020 MPQ: 1
|
IC DRAM 16G PARALLEL 1.2GHZ
|
- | 1.14 V ~ 1.26 V | 0°C ~ 95°C (TC) | - | - | - | 16Gb (1G x 16) | - | ||
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Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1900 MPQ: 1
|
IC DRAM 8G PARALLEL 1.2GHZ
|
- | 1.14 V ~ 1.26 V | -40°C ~ 105°C (TC) | - | - | - | 8Gb (1G x 8) | - | ||
|
|
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Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1900 MPQ: 1
|
IC DRAM 8G PARALLEL 1.2GHZ
|
- | 1.14 V ~ 1.26 V | -40°C ~ 95°C (TC) | - | - | - | 8Gb (1G x 8) | - | ||
|
|
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Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1900 MPQ: 1
|
IC DRAM 8G PARALLEL 1.2GHZ
|
- | 1.14 V ~ 1.26 V | -40°C ~ 125°C (TC) | - | - | - | 8Gb (1G x 8) | - | ||
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Micron Technology Inc. |
Enquête
|
- |
-
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MOQ: 1140 MPQ: 1
|
IC DRAM 8G PARALLEL 1.2GHZ
|
- | 1.14 V ~ 1.26 V | 0°C ~ 95°C (TC) | - | - | - | 8Gb (2G x 4) | - | ||
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Micron Technology Inc. |
Enquête
|
- |
-
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MOQ: 2280 MPQ: 1
|
IC DRAM 8G PARALLEL 1.2GHZ
|
- | 1.14 V ~ 1.26 V | -40°C ~ 105°C (TC) | - | - | - | 8Gb (512M x 16) | - | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 2280 MPQ: 1
|
IC DRAM 8G PARALLEL 1.2GHZ
|
- | 1.14 V ~ 1.26 V | -40°C ~ 95°C (TC) | - | - | - | 8Gb (512M x 16) | - | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 2280 MPQ: 1
|
IC DRAM 8G PARALLEL 1.2GHZ
|
- | 1.14 V ~ 1.26 V | -40°C ~ 125°C (TC) | - | - | - | 8Gb (512M x 16) | - | ||
|
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ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
|
IC DRAM 4G PARALLEL 96TWBGA
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Tape & Reel (TR) | 1.14 V ~ 1.26 V | -40°C ~ 95°C (TC) | 96-TFBGA | 96-TWBGA (9x13) | Surface Mount | 4Gb (256M x 16) | 15ns | ||
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ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
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MOQ: 0 MPQ: 1
|
IC DRAM 4G PARALLEL 96TWBGA
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Tape & Reel (TR) | 1.14 V ~ 1.26 V | 0°C ~ 95°C (TC) | 96-TFBGA | 96-TWBGA (9x13) | Surface Mount | 4Gb (256M x 16) | 15ns | ||
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Micron Technology Inc. |
Enquête
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- |
-
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MOQ: 0 MPQ: 1
|
IC DRAM 16G PARALLEL 78FBGA
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- | 1.14 V ~ 1.26 V | 0°C ~ 95°C (TC) | 78-TFBGA | 78-FBGA (8x12) | Surface Mount | 16Gb (4G x 4) | - | ||
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Micron Technology Inc. |
Enquête
|
- |
-
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MOQ: 1260 MPQ: 1
|
IC DRAM 4G PARALLEL 1.2GHZ
|
- | 1.14 V ~ 1.26 V | -40°C ~ 95°C (TC) | - | - | - | 4Gb (512M x 8) | - | |||
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1260 MPQ: 1
|
IC DRAM 4G PARALLEL 1.2GHZ
|
- | 1.14 V ~ 1.26 V | -40°C ~ 105°C (TC) | - | - | - | 4Gb (512M x 8) | - | |||
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1260 MPQ: 1
|
IC DRAM 4G PARALLEL 1.2GHZ
|
- | 1.14 V ~ 1.26 V | -40°C ~ 125°C (TC) | - | - | - | 4Gb (512M x 8) | - |
