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- Conditions sélectionnées:
Découvrez les produits 637
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Memory Size | Memory Type | Technology | Memory Format | Access Time | Memory Interface | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Mounting Type | Memory Size | Memory Type | Technology | Memory Format | Access Time | Memory Interface | Write Cycle Time - Word, Page | |
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|
|
Maxim Integrated |
5,161
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 896 1WIRE SOT23-3
|
- | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | TO-236-3，SC-59，SOT-23-3 | SOT-23-3 | Surface Mount | 896b (112 x 8) | Non-Volatile | EEPROM | EEPROM | 2μs | 1-Wire? | - | ||
|
|
|
Maxim Integrated |
54,298
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 1K 1WIRE 6TSOC
|
- | - | -40°C ~ 85°C (TA) | 6-LSOJ (0.148"，3.76mm Width) | 6-TSOC | Surface Mount | 1Kb (256 x 4) | Non-Volatile | EEPROM | EEPROM | 2μs | 1-Wire? | - | ||
|
|
|
Maxim Integrated |
22,928
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 1K 1WIRE 6UCSPR
|
- | - | -40°C ~ 85°C (TA) | 6-WFBGA，CSPBGA | 6-UCSPR (1.68x1.68) | Surface Mount | 1Kb (256 x 4) | Non-Volatile | EEPROM | EEPROM | 2μs | 1-Wire? | - | ||
|
|
|
Maxim Integrated |
9,047
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 1K 1WIRE 6TDFN
|
- | - | -40°C ~ 85°C (TA) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | Surface Mount | 1Kb (256 x 4) | Non-Volatile | EEPROM | EEPROM | 2μs | 1-Wire? | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
8,109
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 256K PARALLEL 28SOP
|
- | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 28-SOIC (0.330"，8.38mm Width) | 28-SOP | Surface Mount | 256Kb (32K x 8) | Volatile | SRAM - Asynchronous | SRAM | 45ns | Parallel | 45ns | ||
|
|
|
Maxim Integrated |
10,135
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EPROM 1K 1WIRE SOT23-3
|
- | 2.8 V ~ 6 V | -40°C ~ 85°C (TA) | TO-236-3，SC-59，SOT-23-3 | SOT-23-3 | Surface Mount | 1Kb (128 x 8) | Non-Volatile | EPROM - OTP | EPROM | - | 1-Wire? | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
20,279
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 32SOP
|
- | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 32-SOIC (0.445"，11.30mm Width) | 32-SOP | Surface Mount | 1Mb (128K x 8) | Volatile | SRAM - Asynchronous | SRAM | 35ns | Parallel | 35ns | ||
|
|
|
Maxim Integrated |
14,447
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256 1WIRE 6TSOC
|
- | - | -40°C ~ 85°C (TA) | 6-LSOJ (0.148"，3.76mm Width) | 6-TSOC | Surface Mount | 256b (32 x 8) | Non-Volatile | EEPROM | EEPROM | 15μs | 1-Wire? | - | ||
|
|
|
Maxim Integrated |
24,557
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 4K 1WIRE TO92-3
|
- | 2.8 V ~ 5.25 V | -40°C ~ 85°C (TA) | TO-226-3，TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | Through Hole | 4Kb (256 x 16) | Non-Volatile | EEPROM | EEPROM | 2μs | 1-Wire? | - | ||
|
|
|
Maxim Integrated |
4,193
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 4K 1WIRE 6TDFN
|
- | 2.8 V ~ 5.25 V | -40°C ~ 85°C (TA) | 6-WDFN Exposed Pad | 6-TDFN-EP (3x3) | Surface Mount | 4Kb (256 x 16) | Non-Volatile | EEPROM | EEPROM | 2μs | 1-Wire? | - | ||
|
|
|
Maxim Integrated |
15,405
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 20K 1WIRE 6TSOC
|
- | - | -40°C ~ 85°C (TA) | 6-LSOJ (0.148"，3.76mm Width) | 6-TSOC | Surface Mount | 20Kb (256 x 80) | Non-Volatile | EEPROM | EEPROM | 2.27μs | 1-Wire? | - | ||
|
|
|
Maxim Integrated |
62,124
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 4K 1WIRE 8SO
|
- | 2.8 V ~ 5.25 V | -40°C ~ 85°C (TA) | 8-SOIC (0.209"，5.30mm Width) | 8-SO | Surface Mount | 4Kb (256 x 16) | Non-Volatile | EEPROM | EEPROM | 2μs | 1-Wire? | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
2,335
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 4M PARALLEL 44TSOP II
|
- | 2.4 V ~ 3.6 V | -40°C ~ 85°C (TA) | 44-TSOP (0.400"，10.16mm Width) | 44-TSOP II | Surface Mount | 4Mb (256K x 16) | Volatile | SRAM - Asynchronous | SRAM | 10ns | Parallel | 10ns | ||
|
|
|
Maxim Integrated |
12,498
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 1K 1WIRE TO92-3
|
- | - | -40°C ~ 85°C (TA) | TO-226-3，TO-92-3 (TO-226AA) (Formed Leads) | TO-92-3 | Through Hole | 1Kb (256 x 4) | Non-Volatile | EEPROM | EEPROM | 2μs | 1-Wire? | - | ||
|
|
|
NXP USA Inc. |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM SPI 4MBIT WLCSP
|
- | - | - | 13-XFBGA，WLCSP | 13-WLCSP (2.8x2.74) | Surface Mount | - | - | - | - | - | - | - | ||
|
|
|
Renesas Electronics America |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 4M PARALLEL 32STSOP
|
- | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 32-TFSOP (0.465"，11.80mm Width) | 32-sTSOP | Surface Mount | 4Mb (512K x 8) | Volatile | SRAM | SRAM | 45ns | Parallel | 45ns | ||
|
|
|
Renesas Electronics America |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 32STSOP
|
- | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 32-TFSOP (0.465"，11.80mm Width) | 32-sTSOP | Surface Mount | 1Mb (128K x 8) | Volatile | SRAM | SRAM | 55ns | Parallel | 55ns | ||
|
|
|
Renesas Electronics America |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 32TSOP
|
- | 4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 32-TFSOP (0.724"，18.40mm Width) | 32-TSOP (8x20) | Surface Mount | 1Mb (128K x 8) | Volatile | SRAM | SRAM | 55ns | Parallel | 55ns | ||
|
|
|
Renesas Electronics America |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 32STSOP
|
- | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 32-TFSOP (0.465"，11.80mm Width) | 32-sTSOP | Surface Mount | 1Mb (128K x 8) | Volatile | SRAM | SRAM | 55ns | Parallel | 55ns | ||
|
|
|
Renesas Electronics America |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 32TSOP
|
- | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 32-TFSOP (0.724"，18.40mm Width) | 32-TSOP (8x20) | Surface Mount | 1Mb (128K x 8) | Volatile | SRAM | SRAM | 55ns | Parallel | 55ns |
