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Découvrez les produits 112
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Operating Temperature Memory Size
MT53D384M64D4NY-046 XT ES:D
Micron Technology Inc.
Enquête
-
-
MOQ: 1190  MPQ: 1
IC DRAM 24G 2133MHZ FBGA
- -30°C ~ 105°C (TC) 24Gb (384M x 64)
MT53D384M64D4NY-046 XT:D
Micron Technology Inc.
Enquête
-
-
MOQ: 1190  MPQ: 1
IC DRAM 24G 2133MHZ FBGA
- - 24Gb (384M x 64)
MT53D256M64D4KA-046 XT:B
Micron Technology Inc.
Enquête
-
-
MOQ: 1190  MPQ: 1
IC DRAM 16G 2133MHZ
- -30°C ~ 105°C (TC) 16Gb (256M x 64)
MT53D256M64D4NY-046 XT:B
Micron Technology Inc.
Enquête
-
-
MOQ: 1190  MPQ: 1
IC DRAM 16G 2133MHZ
- -30°C ~ 105°C (TC) 16Gb (256M x 64)
MT53D384M32D2DS-046 WT ES:E
Micron Technology Inc.
Enquête
-
-
MOQ: 1360  MPQ: 1
IC DRAM 12G 2133MHZ
- -30°C ~ 85°C (TC) 12Gb (384M x 32)
MT53D384M32D2DS-046 AIT:C
Micron Technology Inc.
Enquête
-
-
MOQ: 1360  MPQ: 1
IC DRAM 12G 2133MHZ
- -40°C ~ 95°C (TC) 12Gb (384M x 32)
MT53D384M32D2DS-046 AAT:C
Micron Technology Inc.
Enquête
-
-
MOQ: 1360  MPQ: 1
IC DRAM 12G 2133MHZ
- -40°C ~ 105°C (TA) 12Gb (384M x 32)
MT53D512M32D2NP-046 AAT:D
Micron Technology Inc.
Enquête
-
-
MOQ: 1360  MPQ: 1
IC DRAM 16G 2133MHZ
- -40°C ~ 105°C (TA) 16Gb (512M x 32)
MT53D512M32D2NP-046 AIT:D
Micron Technology Inc.
Enquête
-
-
MOQ: 1360  MPQ: 1
IC DRAM 16G 2133MHZ
- -40°C ~ 85°C (TA) 16Gb (512M x 32)
MT53D512M32D2NP-046 AUT:D
Micron Technology Inc.
Enquête
-
-
MOQ: 1360  MPQ: 1
IC DRAM 16G 2133MHZ
- -40°C ~ 125°C (TC) 16Gb (512M x 32)
MT53D512M32D2NP-046 WT:D
Micron Technology Inc.
Enquête
-
-
MOQ: 1360  MPQ: 1
IC DRAM 16G 2133MHZ
- -30°C ~ 85°C (TC) 16Gb (512M x 32)
MT53D512M32D2NP-046 WT:E
Micron Technology Inc.
Enquête
-
-
MOQ: 1360  MPQ: 1
IC DRAM 16G 2133MHZ
- -30°C ~ 85°C (TC) 16Gb (512M x 32)
MT53D384M32D2DS-046 AUT:C
Micron Technology Inc.
Enquête
-
-
MOQ: 1360  MPQ: 1
IC DRAM 12G 2133MHZ
- -40°C ~ 125°C (TC) 12Gb (384M x 32)
MT53D1024M32D4DT-046 AIT:D
Micron Technology Inc.
Enquête
-
-
MOQ: 1360  MPQ: 1
IC DRAM 32G 2133MHZ FBGA
- -40°C ~ 95°C (TC) 32Gb (1G x 32)
MT53D512M32D2DS-046 AIT:D
Micron Technology Inc.
Enquête
-
-
MOQ: 1360  MPQ: 1
IC DRAM 16G 2133MHZ
- -40°C ~ 85°C (TA) 16Gb (512M x 32)
MT53D512M32D2DS-046 AAT:D
Micron Technology Inc.
Enquête
-
-
MOQ: 1360  MPQ: 1
IC DRAM 16G 2133MHZ
- -40°C ~ 105°C (TA) 16Gb (512M x 32)
MT53D384M64D4KA-046 XT:E
Micron Technology Inc.
Enquête
-
-
MOQ: 1140  MPQ: 1
IC DRAM 24G 2133MHZ FBGA
- -30°C ~ 105°C (TC) 24Gb (384M x 64)
MT53D384M64D4SB-046 XT:E
Micron Technology Inc.
Enquête
-
-
MOQ: 1190  MPQ: 1
IC DRAM 24G 2133MHZ FBGA
- -30°C ~ 105°C (TC) 24Gb (384M x 64)
MT53D512M32D2DS-046 AUT:D
Micron Technology Inc.
Enquête
-
-
MOQ: 1360  MPQ: 1
IC DRAM 16G 2133MHZ
- -40°C ~ 125°C (TC) 16Gb (512M x 32)
MT53D1024M32D4NQ-046 AAT:D
Micron Technology Inc.
Enquête
-
-
MOQ: 1360  MPQ: 1
IC DRAM 32G 2133MHZ FBGA
- -40°C ~ 105°C (TA) 32Gb (1G x 32)