Mémoire - Zui Ai Technology（Taiwan）Company.

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Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Memory Size	Memory Type	Technology	Memory Format	Memory Interface
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Memory Size	Memory Type	Technology	Memory Format	Memory Interface
	MT53B384M64D4NZ-053 WT ES:C	Micron Technology Inc.	Enquête	-	-	IC DRAM 24G 1866MHZ FBGA MOQ: 1 MPQ: 1	IC DRAM 24G 1866MHZ FBGA	-	1.1V	-30°C ~ 85°C (TC)	24Gb (384M x 64)	Volatile	SDRAM - Mobile LPDDR4	DRAM	-
	MT53B384M64D4NZ-053 WT:C	Micron Technology Inc.	Enquête	-	-	IC DRAM 24G 1866MHZ FBGA MOQ: 1 MPQ: 1	IC DRAM 24G 1866MHZ FBGA	-	1.1V	-30°C ~ 85°C (TC)	24Gb (384M x 64)	Volatile	SDRAM - Mobile LPDDR4	DRAM	-
	MT53B512M64D4PV-053 WT ES:C TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 32G 1866MHZ FBGA MOQ: 2000 MPQ: 1	IC DRAM 32G 1866MHZ FBGA	Tape & Reel (TR)	1.1V	-30°C ~ 85°C (TC)	32Gb (512M x 64)	Volatile	SDRAM - Mobile LPDDR4	DRAM	-
	MT53B512M64D4PV-053 WT:C TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 32G 1866MHZ FBGA MOQ: 2000 MPQ: 1	IC DRAM 32G 1866MHZ FBGA	Tape & Reel (TR)	1.1V	-30°C ~ 85°C (TC)	32Gb (512M x 64)	Volatile	SDRAM - Mobile LPDDR4	DRAM	-
	MT53B256M64D2NK-053 WT ES:C TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 16G 1866MHZ FBGA MOQ: 1000 MPQ: 1	IC DRAM 16G 1866MHZ FBGA	Tape & Reel (TR)	1.1V	-30°C ~ 85°C (TC)	16Gb (256M x 64)	Volatile	SDRAM - Mobile LPDDR4	DRAM	-
	MT53B256M64D2NK-053 WT:C TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 16G 1866MHZ FBGA MOQ: 1000 MPQ: 1	IC DRAM 16G 1866MHZ FBGA	Tape & Reel (TR)	1.1V	-30°C ~ 85°C (TC)	16Gb (256M x 64)	Volatile	SDRAM - Mobile LPDDR4	DRAM	-
	MT53B384M64D4NK-053 WT ES:A TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 24G 1866MHZ FBGA MOQ: 1000 MPQ: 1	IC DRAM 24G 1866MHZ FBGA	Tape & Reel (TR)	1.1V	-30°C ~ 85°C (TC)	24Gb (384M x 64)	Volatile	SDRAM - Mobile LPDDR4	DRAM	-
	MT53B384M64D4NK-053 WT ES:B TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 24G 1866MHZ FBGA MOQ: 1000 MPQ: 1	IC DRAM 24G 1866MHZ FBGA	Tape & Reel (TR)	1.1V	-30°C ~ 85°C (TC)	24Gb (384M x 64)	Volatile	SDRAM - Mobile LPDDR4	DRAM	-
	MT53B384M64D4NK-053 WT:B TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 24G 1866MHZ FBGA MOQ: 1000 MPQ: 1	IC DRAM 24G 1866MHZ FBGA	Tape & Reel (TR)	1.1V	-30°C ~ 85°C (TC)	24Gb (384M x 64)	Volatile	SDRAM - Mobile LPDDR4	DRAM	-
	MT53B384M64D4TX-053 WT ES:B TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 24G 1866MHZ FBGA MOQ: 1000 MPQ: 1	IC DRAM 24G 1866MHZ FBGA	Tape & Reel (TR)	1.1V	-30°C ~ 85°C (TC)	24Gb (384M x 64)	Volatile	SDRAM - Mobile LPDDR4	DRAM	-
	MT53B384M64D4TX-053 WT:B TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 24G 1866MHZ FBGA MOQ: 1000 MPQ: 1	IC DRAM 24G 1866MHZ FBGA	Tape & Reel (TR)	1.1V	-30°C ~ 85°C (TC)	24Gb (384M x 64)	Volatile	SDRAM - Mobile LPDDR4	DRAM	-
	MT53B384M64D4TZ-053 WT ES:C TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 24G 1866MHZ FBGA MOQ: 1000 MPQ: 1	IC DRAM 24G 1866MHZ FBGA	Tape & Reel (TR)	1.1V	-30°C ~ 85°C (TC)	24Gb (384M x 64)	Volatile	SDRAM - Mobile LPDDR4	DRAM	-
	MT53B384M64D4TZ-053 WT:C TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 24G 1866MHZ FBGA MOQ: 1000 MPQ: 1	IC DRAM 24G 1866MHZ FBGA	Tape & Reel (TR)	1.1V	-30°C ~ 85°C (TC)	24Gb (384M x 64)	Volatile	SDRAM - Mobile LPDDR4	DRAM	-
	MT53B512M64D4NK-053 WT ES:C TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 32G 1866MHZ FBGA MOQ: 1000 MPQ: 1	IC DRAM 32G 1866MHZ FBGA	Tape & Reel (TR)	1.1V	-30°C ~ 85°C (TC)	32Gb (512M x 64)	Volatile	SDRAM - Mobile LPDDR4	DRAM	-
	MT53B512M64D4NK-053 WT:C TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 32G 1866MHZ FBGA MOQ: 1000 MPQ: 1	IC DRAM 32G 1866MHZ FBGA	Tape & Reel (TR)	1.1V	-30°C ~ 85°C (TC)	32Gb (512M x 64)	Volatile	SDRAM - Mobile LPDDR4	DRAM	-
	MT53B512M64D4TX-053 WT ES:C TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 32G 1866MHZ FBGA MOQ: 1000 MPQ: 1	IC DRAM 32G 1866MHZ FBGA	Tape & Reel (TR)	1.1V	-30°C ~ 85°C (TC)	32Gb (512M x 64)	Volatile	SDRAM - Mobile LPDDR4	DRAM	-
	MT53B512M64D4TX-053 WT:C TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 32G 1866MHZ FBGA MOQ: 1000 MPQ: 1	IC DRAM 32G 1866MHZ FBGA	Tape & Reel (TR)	1.1V	-30°C ~ 85°C (TC)	32Gb (512M x 64)	Volatile	SDRAM - Mobile LPDDR4	DRAM	-
	MT53D384M64D4NZ-053 WT ES:C TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 24G 1866MHZ FBGA MOQ: 2000 MPQ: 1	IC DRAM 24G 1866MHZ FBGA	Tape & Reel (TR)	1.1V	-30°C ~ 85°C (TC)	24Gb (384M x 64)	Volatile	SDRAM - Mobile LPDDR4	DRAM	-
	MT53D384M64D4NZ-053 WT:C TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 24G 1866MHZ FBGA MOQ: 2000 MPQ: 1	IC DRAM 24G 1866MHZ FBGA	Tape & Reel (TR)	1.1V	-30°C ~ 85°C (TC)	24Gb (384M x 64)	Volatile	SDRAM - Mobile LPDDR4	DRAM	-
	MT53D384M64D4TZ-053 WT ES:C TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 24G 1866MHZ FBGA MOQ: 1000 MPQ: 1	IC DRAM 24G 1866MHZ FBGA	Tape & Reel (TR)	1.1V	-30°C ~ 85°C (TC)	24Gb (384M x 64)	Volatile	SDRAM - Mobile LPDDR4	DRAM	-