Fabricant:
Mounting Type:
Memory Size:
Write Cycle Time - Word, Page:
Conditions sélectionnées:
Découvrez les produits 245
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Memory Size Technology Clock Frequency Access Time Write Cycle Time - Word, Page
RD28F1604C3TD70SB93
Intel
38
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH RAM 16MIT PARAL 66SCSP
Tray - 2.7 V ~ 3.3 V -25°C ~ 85°C (TC) 66-LFBGA,CSPBGA 66-SCSP (8x12) Surface Mount 16Mbit Flash,4Mbit RAM FLASH,SRAM - 70ns 70ns
IS71LD32160WP128-25BPLI
ISSI,Integrated Silicon Solution Inc
27
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH RAM 128M PARAL 168BGA
Tray - 1.2V,1.8V -40°C ~ 85°C (TA) - 168-BGA Surface Mount 128Mb Flash,512Mb DRAM FLASH - NOR,DRAM - LPDDR2 133MHz - -
RD38F1020W0YTQ0SB93
Intel
12
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH RAM 32MIT PARAL 66SCSP
Tray - 1.7 V ~ 1.95 V -25°C ~ 85°C (TA) 66-LFBGA,CSPBGA 66-SCSP (8x14) Surface Mount 32Mbit Flash,8Mbit RAM FLASH,SRAM - 65ns 65ns
RD38F1020C0ZBL0SB93
Intel
22
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH RAM 32MIT PARAL 66SCSP
Tray - 2.7 V ~ 3.3 V -25°C ~ 85°C (TC) 66-LFBGA,CSPBGA 66-SCSP (8x14) Surface Mount 32Mbit Flash,8Mbit RAM FLASH,SRAM - 70ns 70ns
RD38F1020C0ZTL0SB93
Intel
12
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH RAM 32MIT PARAL 66SCSP
Tray - 2.7 V ~ 3.3 V -25°C ~ 85°C (TC) 66-LFBGA,CSPBGA 66-SCSP (8x14) Surface Mount 32Mbit Flash,8Mbit RAM FLASH,SRAM - 70ns 70ns
RD28F1604C3BD70A
Micron Technology Inc.
Enquête
-
-
MOQ: 1800  MPQ: 1
IC FLASH RAM 16MIT PARAL 66SCSP
Tray - 2.7 V ~ 3.3 V -25°C ~ 85°C (TA) 66-LFBGA,CSPBGA 66-SCSP (12x8) Surface Mount 16Mbit Flash,4Mbit RAM FLASH,SRAM - 70ns 70ns
MT29C4G48MAZAPAKQ-5 IT
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC FLASH RAM 4G PARAL 168WFBGA
Bulk - 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 168-WFBGA 168-WFBGA (12x12) Surface Mount 4Gb (256M x 16)(NAND),2Gb (64M x 32)(LPDRAM) FLASH - NAND,Mobile LPDRAM 200MHz - -
MT29C4G48MAYBAAKQ-5 WT TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC FLASH RAM 4G PARAL 168WFBGA
Tape & Reel (TR) - 1.7 V ~ 1.95 V -25°C ~ 85°C (TA) 168-WFBGA 168-WFBGA (12x12) Surface Mount 4Gb (512M x 8)(NAND),2Gb (64M x 32)(LPDRAM) FLASH - NAND,Mobile LPDRAM 200MHz - -
MT29C4G48MAZBAAKQ-5 WT TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC FLASH RAM 4G PARAL 168WFBGA
Tape & Reel (TR) - 1.7 V ~ 1.95 V -25°C ~ 85°C (TA) 168-WFBGA 168-WFBGA (12x12) Surface Mount 4Gb (256M x 16)(NAND),2Gb (128M x 16)(LPDRAM) FLASH - NAND,Mobile LPDRAM 200MHz - -
MT29C4G48MAYBAAKQ-5 WT
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC FLASH RAM 4G PARAL 168WFBGA
Bulk - 1.7 V ~ 1.95 V -25°C ~ 85°C (TA) 168-WFBGA 168-WFBGA (12x12) Surface Mount 4Gb (512M x 8)(NAND),2Gb (64M x 32)(LPDRAM) FLASH - NAND,Mobile LPDRAM 200MHz - -
MT29C4G48MAZBAAKQ-5 WT
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC FLASH RAM 4G PARAL 168WFBGA
Bulk - 1.7 V ~ 1.95 V -25°C ~ 85°C (TA) 168-WFBGA 168-WFBGA (12x12) Surface Mount 4Gb (256M x 16)(NAND),2Gb (128M x 16)(LPDRAM) FLASH - NAND,Mobile LPDRAM 200MHz - -
MT29RZ4B2DZZHHWD-18I.84F TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1000  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
Tape & Reel (TR) - 1.8V -40°C ~ 85°C (TA) 162-VFBGA 162-VFBGA (10.5x8) Surface Mount 4Gb (128M x 32)(NAND),2G (64M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz - -
MT29RZ4B2DZZHHWD-18I.84F TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
Cut Tape (CT) - 1.8V -40°C ~ 85°C (TA) 162-VFBGA 162-VFBGA (10.5x8) Surface Mount 4Gb (128M x 32)(NAND),2G (64M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz - -
MT29RZ4B2DZZHHWD-18I.84F TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
- - 1.8V -40°C ~ 85°C (TA) 162-VFBGA 162-VFBGA (10.5x8) Surface Mount 4Gb (128M x 32)(NAND),2G (64M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz - -
MT29RZ4B4DZZMGWD-18I.80C TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1000  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
Tape & Reel (TR) - 1.8V -40°C ~ 85°C (TA) 162-VFBGA 162-VFBGA (10.5x8) Surface Mount 4Gb (128M x 32)(NAND),4G (128M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz - -
MT29RZ4B4DZZMGWD-18I.80C TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
Cut Tape (CT) - 1.8V -40°C ~ 85°C (TA) 162-VFBGA 162-VFBGA (10.5x8) Surface Mount 4Gb (128M x 32)(NAND),4G (128M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz - -
MT29RZ4B4DZZMGWD-18I.80C TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
- - 1.8V -40°C ~ 85°C (TA) 162-VFBGA 162-VFBGA (10.5x8) Surface Mount 4Gb (128M x 32)(NAND),4G (128M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz - -
MT29RZ2B1DZZHGWD-18I.83G TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC FLASH RAM 2G PARALLEL 533MHZ
Tape & Reel (TR) - 1.8V -40°C ~ 85°C (TA) 162-VFBGA 162-VFBGA (10.5x8) Surface Mount 2Gb (256M x 8)(NAND),1G (32M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz - -
MT29RZ2B1DZZHGWD-18I.83G TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FLASH RAM 2G PARALLEL 533MHZ
Cut Tape (CT) - 1.8V -40°C ~ 85°C (TA) 162-VFBGA 162-VFBGA (10.5x8) Surface Mount 2Gb (256M x 8)(NAND),1G (32M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz - -
MT29RZ2B1DZZHGWD-18I.83G TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FLASH RAM 2G PARALLEL 533MHZ
- - 1.8V -40°C ~ 85°C (TA) 162-VFBGA 162-VFBGA (10.5x8) Surface Mount 2Gb (256M x 8)(NAND),1G (32M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2 533MHz - -