Découvrez les produits 5
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Operating Temperature Package / Case Supplier Device Package Technology Clock Frequency Access Time Write Cycle Time - Word, Page
MT47H512M4THN-3:E TR
Micron Technology Inc.
Enquête
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MOQ: 2000  MPQ: 1
IC DRAM 2G PARALLEL 63FBGA
1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 63-FBGA 63-FBGA (9x11.5) SDRAM - DDR2 333MHz 450ps 15ns
MT47H512M4THN-37E:E TR
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 63FBGA
1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 63-FBGA 63-FBGA (9x11.5) SDRAM - DDR2 267MHz 500ps 15ns
MT41K512M4DA-125:K TR
Micron Technology Inc.
Enquête
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MOQ: 2000  MPQ: 1
IC DRAM 2G PARALLEL 78FBGA
1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 78-TFBGA 78-FBGA (8x10.5) SDRAM - DDR3L 800MHz 13.75ns -
MT47H512M4EB-25E:C TR
Micron Technology Inc.
Enquête
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MOQ: 2000  MPQ: 1
IC DRAM 2G PARALLEL 60FBGA
1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 60-TFBGA 60-FBGA (9x11.5) SDRAM - DDR2 400MHz 400ps 15ns
MT47H512M4THN-25E:M TR
Micron Technology Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 2G PARALLEL 63FBGA
1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 63-TFBGA 63-FBGA (8x10) SDRAM - DDR2 400MHz 400ps 15ns