Fabricant:
Package / Case:
Supplier Device Package:
Mounting Type:
Memory Format:
Access Time:
Write Cycle Time - Word, Page:
Conditions sélectionnées:
Découvrez les produits 13
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Memory Type Technology Memory Format Clock Frequency Access Time Write Cycle Time - Word, Page
MT40A4G4NRE-083E:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 16G PARALLEL 78FBGA
Tape & Reel (TR) - 1.14 V ~ 1.26 V 0°C ~ 95°C (TC) 78-TFBGA 78-FBGA (8x12) Surface Mount Volatile SDRAM - DDR4 DRAM 1.2GHz - -
MT40A4G4NRE-083E:B TR
Micron Technology Inc.
1,719
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 16G PARALLEL 78FBGA
Cut Tape (CT) - 1.14 V ~ 1.26 V 0°C ~ 95°C (TC) 78-TFBGA 78-FBGA (8x12) Surface Mount Volatile SDRAM - DDR4 DRAM 1.2GHz - -
MT40A4G4NRE-083E:B TR
Micron Technology Inc.
1,719
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 16G PARALLEL 78FBGA
- - 1.14 V ~ 1.26 V 0°C ~ 95°C (TC) 78-TFBGA 78-FBGA (8x12) Surface Mount Volatile SDRAM - DDR4 DRAM 1.2GHz - -
MT40A4G4NRE-075E:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 16G PARALLEL 78FBGA
Tape & Reel (TR) - 1.14 V ~ 1.26 V 0°C ~ 95°C (TC) 78-TFBGA 78-FBGA (8x12) Surface Mount Volatile SDRAM - DDR4 DRAM 1.33GHz - -
S34MS16G202BHI000
Cypress Semiconductor Corp
1,890
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 16G PARALLEL 63BGA
Tray MS-2 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 63-VFBGA 63-BGA (11x9) Surface Mount Non-Volatile FLASH - NAND Flash - 45ns 45ns
S34MS16G202BHI003
Cypress Semiconductor Corp
Enquête
-
-
MOQ: 2300  MPQ: 1
IC FLASH 16G PARALLEL 63BGA
Tape & Reel (TR) MS-2 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 63-VFBGA 63-BGA (11x9) Surface Mount Non-Volatile FLASH - NAND Flash - 45ns 45ns
MT40A4G4FSE-083E:A
Micron Technology Inc.
Enquête
-
-
MOQ: 1020  MPQ: 1
IC DRAM 16G PARALLEL 1.2GHZ
- - 1.14 V ~ 1.26 V 0°C ~ 95°C (TC) - - - Volatile SDRAM - DDR4 DRAM 1.2GHz - -
MT40A4G4FSE-083E:A TR
Micron Technology Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 16G PARALLEL 1.2GHZ
Tape & Reel (TR) - 1.14 V ~ 1.26 V 0°C ~ 95°C (TC) - - - Volatile SDRAM - DDR4 DRAM 1.2GHz - -
MT40A4G4NRE-083E C:B
Micron Technology Inc.
Enquête
-
-
MOQ: 0  MPQ: 1
IC DRAM 16G PARALLEL 78FBGA
- - 1.14 V ~ 1.26 V 0°C ~ 95°C (TC) 78-TFBGA 78-FBGA (8x12) Surface Mount Volatile SDRAM - DDR4 DRAM 1.2GHz - -
MT40A4G4NRE-075E:B
Micron Technology Inc.
Enquête
-
-
MOQ: 1140  MPQ: 1
IC DRAM 16G PARALLEL 1.33GHZ
- - 1.14 V ~ 1.26 V 0°C ~ 95°C (TC) - - - Volatile SDRAM - DDR4 DRAM 1.33GHz - -
MT40A4G4NRE-083E:B
Micron Technology Inc.
Enquête
-
-
MOQ: 1140  MPQ: 1
IC DRAM 16G PARALLEL 1.2GHZ
- - 1.14 V ~ 1.26 V 0°C ~ 95°C (TC) - - - Volatile SDRAM - DDR4 DRAM 1.2GHz - -
MT40A4G4HPR-075H:G TR
Micron Technology Inc.
Enquête
-
-
MOQ: 0  MPQ: 1
MEMORY DRAM
Tape & Reel (TR) TwinDie 1.14 V ~ 1.26 V 0°C ~ 95°C (TC) - - - Volatile SDRAM - DDR4 DRAM 1.333GHz - -
MT40A4G4HPR-075H:G
Micron Technology Inc.
Enquête
-
-
MOQ: 0  MPQ: 1
MEMORY DRAM
- TwinDie 1.14 V ~ 1.26 V 0°C ~ 95°C (TC) - - - Volatile SDRAM - DDR4 DRAM 1.333GHz - -