- Voltage - Supply:
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- Operating Temperature:
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- Package / Case:
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- Supplier Device Package:
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- Memory Type:
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- Clock Frequency:
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- Access Time:
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- Memory Interface:
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- Write Cycle Time - Word, Page:
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- Conditions sélectionnées:
Découvrez les produits 48
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | ||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 1G PARALLEL 60FBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 60-FBGA | 60-FBGA (8x11.5) | Volatile | SDRAM - DDR2 | DRAM | 200MHz | 600ps | Parallel | 15ns | ||||
Micron Technology Inc. |
950
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 60FBGA
|
Cut Tape (CT) | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 60-FBGA | 60-FBGA (8x11.5) | Volatile | SDRAM - DDR2 | DRAM | 200MHz | 600ps | Parallel | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 1G PARALLEL 66TSOP
|
Tray | 2.3 V ~ 2.7 V | 0°C ~ 70°C (TA) | 66-TSSOP (0.400",10.16mm Width) | 66-TSOP | Volatile | SDRAM - DDR | DRAM | 167MHz | 700ps | Parallel | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 1G PARALLEL 66TSOP
|
Tape & Reel (TR) | 2.3 V ~ 2.7 V | 0°C ~ 70°C (TA) | 66-TSSOP (0.400",10.16mm Width) | 66-TSOP | Volatile | SDRAM - DDR | DRAM | 167MHz | 700ps | Parallel | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 1G PARALLEL 66TSOP
|
Tray | 2.3 V ~ 2.7 V | 0°C ~ 70°C (TA) | 66-TSSOP (0.400",10.16mm Width) | 66-TSOP | Volatile | SDRAM - DDR | DRAM | 133MHz | 750ps | Parallel | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 1G PARALLEL 66TSOP
|
Tape & Reel (TR) | 2.3 V ~ 2.7 V | 0°C ~ 70°C (TA) | 66-TSSOP (0.400",10.16mm Width) | 66-TSOP | Volatile | SDRAM - DDR | DRAM | 133MHz | 750ps | Parallel | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 1G PARALLEL 66TSOP
|
Tray | 2.3 V ~ 2.7 V | 0°C ~ 70°C (TA) | 66-TSSOP (0.400",10.16mm Width) | 66-TSOP | Volatile | SDRAM - DDR | DRAM | 167MHz | 700ps | Parallel | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 1G PARALLEL 66TSOP
|
Tape & Reel (TR) | 2.3 V ~ 2.7 V | 0°C ~ 70°C (TA) | 66-TSSOP (0.400",10.16mm Width) | 66-TSOP | Volatile | SDRAM - DDR | DRAM | 167MHz | 700ps | Parallel | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 1G PARALLEL 66TSOP
|
Tray | 2.3 V ~ 2.7 V | 0°C ~ 70°C (TA) | 66-TSSOP (0.400",10.16mm Width) | 66-TSOP | Volatile | SDRAM - DDR | DRAM | 133MHz | 750ps | Parallel | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 1G PARALLEL 66TSOP
|
Tape & Reel (TR) | 2.3 V ~ 2.7 V | 0°C ~ 70°C (TA) | 66-TSSOP (0.400",10.16mm Width) | 66-TSOP | Volatile | SDRAM - DDR | DRAM | 133MHz | 750ps | Parallel | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 1G PARALLEL 92FBGA
|
Tray | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 92-VFBGA | 92-FBGA (11x19) | Volatile | SDRAM - DDR2 | DRAM | 267MHz | 400ps | Parallel | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 1G PARALLEL 92FBGA
|
Tray | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 92-VFBGA | 92-FBGA (11x19) | Volatile | SDRAM - DDR2 | DRAM | 333MHz | 450ps | Parallel | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 1G PARALLEL 92FBGA
|
Tray | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 92-VFBGA | 92-FBGA (11x19) | Volatile | SDRAM - DDR2 | DRAM | 200MHz | 600ps | Parallel | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 1G PARALLEL 92FBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 92-VFBGA | 92-FBGA (11x19) | Volatile | SDRAM - DDR2 | DRAM | 200MHz | 600ps | Parallel | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 1G PARALLEL 92FBGA
|
Tray | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 92-VFBGA | 92-FBGA (11x19) | Volatile | SDRAM - DDR2 | DRAM | 200MHz | 600ps | Parallel | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 1G PARALLEL 92FBGA
|
Tray | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 92-VFBGA | 92-FBGA (11x19) | Volatile | SDRAM - DDR2 | DRAM | 267MHz | 400ps | Parallel | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 1G PARALLEL 92FBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 92-VFBGA | 92-FBGA (11x19) | Volatile | SDRAM - DDR2 | DRAM | 267MHz | 400ps | Parallel | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 1G PARALLEL 60FBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 60-FBGA | 60-FBGA (8x11.5) | Volatile | SDRAM - DDR2 | DRAM | 333MHz | 450ps | Parallel | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 60FBGA
|
Cut Tape (CT) | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 60-FBGA | 60-FBGA (8x11.5) | Volatile | SDRAM - DDR2 | DRAM | 333MHz | 450ps | Parallel | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 60FBGA
|
- | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 60-FBGA | 60-FBGA (8x11.5) | Volatile | SDRAM - DDR2 | DRAM | 333MHz | 450ps | Parallel | 15ns |