Découvrez les produits 8
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Technology Memory Format Write Cycle Time - Word, Page
DS1258AB-100
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 2M PARALLEL 40EDIP
4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 40-DIP Module (0.610",15.495mm) 40-EDIP Through Hole NVSRAM (Non-Volatile SRAM) NVSRAM 100ns
DS1258Y-100
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 2M PARALLEL 40EDIP
4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 40-DIP Module (0.610",15.495mm) 40-EDIP Through Hole NVSRAM (Non-Volatile SRAM) NVSRAM 100ns
DS1258W-100
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 2M PARALLEL 40EDIP
3 V ~ 3.6 V 0°C ~ 70°C (TA) 40-DIP Module (0.610",15.495mm) 40-EDIP Through Hole NVSRAM (Non-Volatile SRAM) NVSRAM 100ns
DS1258W-100IND#
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 2M PARALLEL 40EDIP
3 V ~ 3.6 V -40°C ~ 85°C (TA) 40-DIP Module (0.610",15.495mm) 40-EDIP Through Hole NVSRAM (Non-Volatile SRAM) NVSRAM 100ns
DS1258W-100#
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 2M PARALLEL 40EDIP
3 V ~ 3.6 V 0°C ~ 70°C (TA) 40-DIP Module (0.610",15.495mm) 40-EDIP Through Hole NVSRAM (Non-Volatile SRAM) NVSRAM 100ns
DS1258AB-100#
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 2M PARALLEL 40EDIP
4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 40-DIP Module (0.610",15.495mm) 40-EDIP Through Hole NVSRAM (Non-Volatile SRAM) NVSRAM 100ns
DS1258Y-100#
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 2M PARALLEL 40EDIP
4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 40-DIP Module (0.610",15.495mm) 40-EDIP Through Hole NVSRAM (Non-Volatile SRAM) NVSRAM 100ns
M27W202-100K6
STMicroelectronics
Enquête
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-
MOQ: 580  MPQ: 1
IC EPROM 2M PARALLEL 44PLCC
2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 44-LCC 44-PLCC Surface Mount EPROM - OTP EPROM -