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Découvrez les produits 115
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Memory Type Technology Memory Format Clock Frequency Access Time Memory Interface Write Cycle Time - Word, Page
MT41K512M16HA-107:A TR
Micron Technology Inc.
Enquête
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MOQ: 2000  MPQ: 1
IC DRAM 8G PARALLEL 96FBGA
Tray 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 96-TFBGA 96-FBGA (14x9) Surface Mount Volatile SDRAM - DDR3L DRAM 933MHz 20ns Parallel -
MT29F8G16ADADAH4:D
Micron Technology Inc.
Enquête
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MOQ: 1260  MPQ: 1
IC FLASH 8G PARALLEL 63VFBGA
Bulk 2.7 V ~ 3.6 V 0°C ~ 70°C (TA) 63-VFBGA 63-VFBGA (9x11) Surface Mount Non-Volatile FLASH - NAND Flash - - Parallel -
MT29F8G16ADADAH4-IT:D
Micron Technology Inc.
Enquête
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MOQ: 1260  MPQ: 1
IC FLASH 8G PARALLEL 63VFBGA
Bulk 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) 63-VFBGA 63-VFBGA (9x11) Surface Mount Non-Volatile FLASH - NAND Flash - - Parallel -
MT29F8G16ADBDAH4:D
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC FLASH 8G PARALLEL 63VFBGA
Bulk 1.7 V ~ 1.95 V 0°C ~ 70°C (TA) 63-VFBGA 63-VFBGA (9x11) Surface Mount Non-Volatile FLASH - NAND Flash - - Parallel -
MT29F8G16ADBDAH4-IT:D
Micron Technology Inc.
Enquête
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MOQ: 1260  MPQ: 1
IC FLASH 8G PARALLEL 63VFBGA
Bulk 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) 63-VFBGA 63-VFBGA (9x11) Surface Mount Non-Volatile FLASH - NAND Flash - - Parallel -
MT41K512M16TNA-125 IT:E TR
Micron Technology Inc.
Enquête
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MOQ: 2000  MPQ: 1
IC DRAM 8G PARALLEL 96FBGA
Tape & Reel (TR) 1.283 V ~ 1.45 V -40°C ~ 95°C (TC) 96-TFBGA 96-FBGA (10x14) Surface Mount Volatile SDRAM - DDR3L DRAM 800MHz 13.5ns Parallel -
MT41K512M16TNA-125 M:E TR
Micron Technology Inc.
Enquête
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MOQ: 2000  MPQ: 1
IC DRAM 8G PARALLEL 96FBGA
Tape & Reel (TR) 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 96-TFBGA 96-FBGA (10x14) Surface Mount Volatile SDRAM - DDR3L DRAM 800MHz 13.5ns Parallel -
MT41K512M16TNA-125:E TR
Micron Technology Inc.
Enquête
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MOQ: 2000  MPQ: 1
IC DRAM 8G PARALLEL 96FBGA
Tape & Reel (TR) 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 96-TFBGA 96-FBGA (10x14) Surface Mount Volatile SDRAM - DDR3L DRAM 800MHz 13.5ns Parallel -
MT41K512M16TNA-125 IT:E
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 8G PARALLEL 96FBGA
Tray 1.283 V ~ 1.45 V -40°C ~ 95°C (TC) 96-TFBGA 96-FBGA (10x14) Surface Mount Volatile SDRAM - DDR3L DRAM 800MHz 13.5ns Parallel -
MT41K512M16TNA-125 M:E
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 8G PARALLEL 96FBGA
Tray 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 96-TFBGA 96-FBGA (10x14) Surface Mount Volatile SDRAM - DDR3L DRAM 800MHz 13.5ns Parallel -
MT41K512M16TNA-125:E
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 8G PARALLEL 96FBGA
Tray 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 96-TFBGA 96-FBGA (10x14) Surface Mount Volatile SDRAM - DDR3L DRAM 800MHz 13.5ns Parallel -
MT41K512M16TNA-107:E
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 8G PARALLEL 96FBGA
Tray 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 96-TFBGA 96-FBGA (10x14) Surface Mount Volatile SDRAM - DDR3L DRAM 933MHz 20ns Parallel -
MT41K512M16HA-125 AIT:A TR
Micron Technology Inc.
Enquête
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MOQ: 2000  MPQ: 1
IC DRAM 8G PARALLEL 96FBGA
Tape & Reel (TR) 1.283 V ~ 1.45 V -40°C ~ 95°C (TC) 96-TFBGA 96-FBGA (14x9) Surface Mount Volatile SDRAM - DDR3L DRAM 800MHz 13.5ns Parallel -
MT40A512M16LY-075:E
Micron Technology Inc.
Enquête
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MOQ: 1080  MPQ: 1
IC DRAM 8G PARALLEL 1.33GHZ
- 1.14 V ~ 1.26 V 0°C ~ 95°C (TC) - - - Volatile SDRAM - DDR4 DRAM 1.33GHz - Parallel -
MT40A512M16JY-062E:B
Micron Technology Inc.
Enquête
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MOQ: 1368  MPQ: 1
IC DRAM 8G PARALLEL 1.6GHZ
- 1.14 V ~ 1.26 V 0°C ~ 95°C (TC) - - - Volatile SDRAM - DDR4 DRAM 1.6GHz - Parallel -
MT40A512M16LY-062E:E
Micron Technology Inc.
Enquête
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MOQ: 1080  MPQ: 1
IC DRAM 8G PARALLEL 1.6GHZ
- 1.14 V ~ 1.26 V 0°C ~ 95°C (TC) - - - Volatile SDRAM - DDR4 DRAM 1.6GHz - Parallel -
MT40A512M16JY-062E IT:B
Micron Technology Inc.
Enquête
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MOQ: 1368  MPQ: 1
IC DRAM 8G PARALLEL 1.6GHZ
- 1.14 V ~ 1.26 V -40°C ~ 95°C (TC) - - - Volatile SDRAM - DDR4 DRAM 1.6GHz - Parallel -
MT40A512M16JY-062E IT:B TR
Micron Technology Inc.
Enquête
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MOQ: 2000  MPQ: 1
IC DRAM 8G PARALLEL 1.6GHZ
Tape & Reel (TR) 1.14 V ~ 1.26 V -40°C ~ 95°C (TC) - - - Volatile SDRAM - DDR4 DRAM 1.6GHz - Parallel -
MT40A512M16JY-062E:B TR
Micron Technology Inc.
Enquête
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MOQ: 2000  MPQ: 1
IC DRAM 8G PARALLEL 1.6GHZ
Tape & Reel (TR) 1.14 V ~ 1.26 V 0°C ~ 95°C (TC) - - - Volatile SDRAM - DDR4 DRAM 1.6GHz - Parallel -
MT40A512M16LY-062E:E TR
Micron Technology Inc.
Enquête
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MOQ: 2000  MPQ: 1
IC DRAM 8G PARALLEL 1.6GHZ
Tape & Reel (TR) 1.14 V ~ 1.26 V 0°C ~ 95°C (TC) - - - Volatile SDRAM - DDR4 DRAM 1.6GHz - Parallel -