Mémoire - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Voltage - Supply：

Operating Temperature：

Package / Case：

Supplier Device Package：

Mounting Type：

Memory Type：

Technology：

Memory Format：

Clock Frequency：

Access Time：

Memory Interface：

Write Cycle Time - Word, Page：

Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Memory Interface	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Mounting Type	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Memory Interface	Write Cycle Time - Word, Page
	MT41K64M16TW-107 AIT:J TR	Micron Technology Inc.	2,000	3 jours	-	IC DRAM 1G PARALLEL 96FBGA MOQ: 2000 MPQ: 1	IC DRAM 1G PARALLEL 96FBGA	Tape & Reel (TR)	-	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	96-TFBGA	96-FBGA (8x14)	Surface Mount	Volatile	SDRAM - DDR3L	DRAM	933MHz	20ns	Parallel	-
	MT41K64M16TW-107 AIT:J TR	Micron Technology Inc.	2,978	3 jours	-	IC DRAM 1G PARALLEL 96FBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 96FBGA	Cut Tape (CT)	-	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	96-TFBGA	96-FBGA (8x14)	Surface Mount	Volatile	SDRAM - DDR3L	DRAM	933MHz	20ns	Parallel	-
	MT41K64M16TW-107 AIT:J TR	Micron Technology Inc.	2,978	3 jours	-	IC DRAM 1G PARALLEL 96FBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 96FBGA	-	-	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	96-TFBGA	96-FBGA (8x14)	Surface Mount	Volatile	SDRAM - DDR3L	DRAM	933MHz	20ns	Parallel	-
	MT41K64M16TW-107:J	Micron Technology Inc.	7,280	3 jours	-	IC DRAM 1G PARALLEL 96FBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 96FBGA	Tray	-	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	96-TFBGA	96-FBGA (8x14)	Surface Mount	Volatile	SDRAM - DDR3L	DRAM	933MHz	20ns	Parallel	-
	W971GG6SB-25	Winbond Electronics	838	3 jours	-	IC DRAM 1G PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84WBGA	Tray	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	84-TFBGA	84-WBGA (8x12.5)	Surface Mount	Volatile	SDRAM - DDR2	DRAM	200MHz	400ps	Parallel	15ns
	IS43DR16640C-25DBL	ISSI，Integrated Silicon Solution Inc	1,149	3 jours	-	IC DRAM 1G PARALLEL 84TWBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84TWBGA	Tray	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	84-TFBGA	84-TWBGA (8x12.5)	Surface Mount	Volatile	SDRAM - DDR2	DRAM	400MHz	400ns	Parallel	15ns
	IS43TR16640B-125JBL	ISSI，Integrated Silicon Solution Inc	839	3 jours	-	IC DRAM 1G PARALLEL 96TWBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 96TWBGA	Tray	-	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	96-TFBGA	96-TWBGA (9x13)	Surface Mount	Volatile	SDRAM - DDR3	DRAM	800MHz	20ns	Parallel	15ns
	IS43DR16640B-25DBL	ISSI，Integrated Silicon Solution Inc	615	3 jours	-	IC DRAM 1G PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84WBGA	Tray	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	84-TFBGA	84-WBGA (8x12.5)	Surface Mount	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	Parallel	15ns
	W971GG6SB25I	Winbond Electronics	812	3 jours	-	IC DRAM 1G PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84WBGA	Tray	-	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	84-TFBGA	84-WBGA (8x12.5)	Surface Mount	Volatile	SDRAM - DDR2	DRAM	200MHz	400ps	Parallel	15ns
	AS4C64M16D2A-25BIN	Alliance Memory，Inc.	653	3 jours	-	IC DRAM 1G PARALLEL 84FBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84FBGA	Bulk	-	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	84-TFBGA	84-FBGA (8x12.5)	Surface Mount	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	Parallel	15ns
	W94AD6KBHX5I	Winbond Electronics	2,207	3 jours	-	IC DRAM 1G PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 60VFBGA	Tray	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TC)	60-TFBGA	60-VFBGA (8x9)	Surface Mount	Volatile	SDRAM - Mobile LPDDR	DRAM	200MHz	5ns	Parallel	15ns
	IS43DR16640C-3DBLI	ISSI，Integrated Silicon Solution Inc	1,340	3 jours	-	IC DRAM 1G PARALLEL 84TWBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84TWBGA	Tray	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	84-TFBGA	84-TWBGA (8x12.5)	Surface Mount	Volatile	SDRAM - DDR2	DRAM	333MHz	450ns	Parallel	15ns
	IS43TR16640B-125JBLI	ISSI，Integrated Silicon Solution Inc	118	3 jours	-	IC DRAM 1G PARALLEL 96TWBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 96TWBGA	Tray	-	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	96-TFBGA	96-TWBGA (9x13)	Surface Mount	Volatile	SDRAM - DDR3	DRAM	800MHz	20ns	Parallel	15ns
	MT46H64M16LFBF-5 IT:B TR	Micron Technology Inc.	3,000	3 jours	-	IC DRAM 1G PARALLEL 60VFBGA MOQ: 1000 MPQ: 1	IC DRAM 1G PARALLEL 60VFBGA	Tape & Reel (TR)	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA	60-VFBGA (8x9)	Surface Mount	Volatile	SDRAM - Mobile LPDDR	DRAM	200MHz	5.0ns	Parallel	15ns
	MT46H64M16LFBF-5 IT:B TR	Micron Technology Inc.	3,784	3 jours	-	IC DRAM 1G PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 60VFBGA	Cut Tape (CT)	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA	60-VFBGA (8x9)	Surface Mount	Volatile	SDRAM - Mobile LPDDR	DRAM	200MHz	5.0ns	Parallel	15ns
	MT46H64M16LFBF-5 IT:B TR	Micron Technology Inc.	3,784	3 jours	-	IC DRAM 1G PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 60VFBGA	-	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA	60-VFBGA (8x9)	Surface Mount	Volatile	SDRAM - Mobile LPDDR	DRAM	200MHz	5.0ns	Parallel	15ns
	IS43TR16640BL-125JBLI	ISSI，Integrated Silicon Solution Inc	380	3 jours	-	IC DRAM 1G PARALLEL 96TWBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 96TWBGA	Tray	-	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	96-TFBGA	96-TWBGA (9x13)	Surface Mount	Volatile	SDRAM - DDR3L	DRAM	800MHz	20ns	Parallel	15ns
	IS43DR16640B-25DBLI	ISSI，Integrated Silicon Solution Inc	635	3 jours	-	IC DRAM 1G PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84WBGA	Tray	-	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	84-TFBGA	84-WBGA (8x12.5)	Surface Mount	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	Parallel	15ns
	AS4C64M16D1A-6TIN	Alliance Memory，Inc.	107	3 jours	-	IC DRAM 1G PARALLEL 66TSOP II MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 66TSOP II	Bulk	-	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	Surface Mount	Volatile	SDRAM - DDR	DRAM	166MHz	700ps	Parallel	15ns
	AS4C64M16D1-6TIN	Alliance Memory，Inc.	201	3 jours	-	IC DRAM 1G PARALLEL 66TSOP II MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 66TSOP II	Bulk	-	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	Surface Mount	Volatile	SDRAM - DDR	DRAM	166MHz	700ps	Parallel	15ns

Envoyé avec succès!