Fabricant:
Mounting Type:
Memory Format:
Write Cycle Time - Word, Page:
Conditions sélectionnées:
Découvrez les produits 279
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Operating Temperature Package / Case Supplier Device Package Mounting Type Memory Type Technology Memory Format Clock Frequency Access Time Write Cycle Time - Word, Page
IS43TR16256AL-125KBL
ISSI,Integrated Silicon Solution Inc
14,228
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 96TWBGA
Tray - 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 96-TFBGA 96-TWBGA (9x13) Surface Mount Volatile SDRAM - DDR3L DRAM 800MHz 20ns 15ns
AS4C256M16D3LB-12BCN
Alliance Memory,Inc.
3,230
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
Tray - 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 96-TFBGA 96-FBGA (13.5x9) Surface Mount Volatile SDRAM - DDR3L DRAM 800MHz 20ns 15ns
AS4C256M16D3B-12BCN
Alliance Memory,Inc.
1,123
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
Tray - 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 96-TFBGA 96-FBGA (13.5x9) Surface Mount Volatile SDRAM - DDR3 DRAM 800MHz 20ns 15ns
AS4C256M16D3B-12BIN
Alliance Memory,Inc.
671
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
Tray - 1.425 V ~ 1.575 V -40°C ~ 95°C (TC) 96-TFBGA 96-FBGA (13.5x9) Surface Mount Volatile SDRAM - DDR3 DRAM 800MHz 20ns 15ns
MT40A256M16GE-083E AUT:B
Micron Technology Inc.
741
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 1.2GHZ
Tray - 1.14 V ~ 1.26 V -40°C ~ 125°C (TC) 96-TFBGA 96-FBGA (14x9) Surface Mount Volatile SDRAM - DDR4 DRAM 1.2GHz - -
MT41K256M16LY-107:N TR
Micron Technology Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
Tape & Reel (TR) - 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 96-TFBGA 96-FBGA (7.5x13.5) Surface Mount Volatile SDRAM - DDR3L DRAM 933MHz 20ns -
MT41K256M16LY-107:N TR
Micron Technology Inc.
1,835
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
Cut Tape (CT) - 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 96-TFBGA 96-FBGA (7.5x13.5) Surface Mount Volatile SDRAM - DDR3L DRAM 933MHz 20ns -
MT41K256M16LY-107:N TR
Micron Technology Inc.
1,835
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
- - 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 96-TFBGA 96-FBGA (7.5x13.5) Surface Mount Volatile SDRAM - DDR3L DRAM 933MHz 20ns -
MT41K256M16TW-107 XIT:P TR
Micron Technology Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
Tape & Reel (TR) - 1.283 V ~ 1.45 V -40°C ~ 95°C (TC) 96-TFBGA 96-FBGA (8x14) Surface Mount Volatile SDRAM - DDR3L DRAM 933MHz 20ns -
MT41K256M16TW-107 XIT:P TR
Micron Technology Inc.
1,068
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
Cut Tape (CT) - 1.283 V ~ 1.45 V -40°C ~ 95°C (TC) 96-TFBGA 96-FBGA (8x14) Surface Mount Volatile SDRAM - DDR3L DRAM 933MHz 20ns -
MT41K256M16TW-107 XIT:P TR
Micron Technology Inc.
1,068
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
- - 1.283 V ~ 1.45 V -40°C ~ 95°C (TC) 96-TFBGA 96-FBGA (8x14) Surface Mount Volatile SDRAM - DDR3L DRAM 933MHz 20ns -
MT41K256M16TW-107 AIT:P TR
Micron Technology Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
Tape & Reel (TR) - 1.283 V ~ 1.45 V -40°C ~ 95°C (TC) 96-TFBGA 96-FBGA (8x14) Surface Mount Volatile SDRAM - DDR3L DRAM 933MHz 20ns -
MT41K256M16TW-107 AIT:P TR
Micron Technology Inc.
1,431
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
Cut Tape (CT) - 1.283 V ~ 1.45 V -40°C ~ 95°C (TC) 96-TFBGA 96-FBGA (8x14) Surface Mount Volatile SDRAM - DDR3L DRAM 933MHz 20ns -
MT41K256M16TW-107 AIT:P TR
Micron Technology Inc.
1,431
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
- - 1.283 V ~ 1.45 V -40°C ~ 95°C (TC) 96-TFBGA 96-FBGA (8x14) Surface Mount Volatile SDRAM - DDR3L DRAM 933MHz 20ns -
MT40A256M16GE-083E AUT:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 4G PARALLEL 1.2GHZ
Tape & Reel (TR) - 1.14 V ~ 1.26 V -40°C ~ 125°C (TC) 96-TFBGA 96-FBGA (14x9) Surface Mount Volatile SDRAM - DDR4 DRAM 1.2GHz - -
MT40A256M16GE-083E AUT:B TR
Micron Technology Inc.
1,388
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 1.2GHZ
Cut Tape (CT) - 1.14 V ~ 1.26 V -40°C ~ 125°C (TC) 96-TFBGA 96-FBGA (14x9) Surface Mount Volatile SDRAM - DDR4 DRAM 1.2GHz - -
MT40A256M16GE-083E AUT:B TR
Micron Technology Inc.
1,388
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 1.2GHZ
- - 1.14 V ~ 1.26 V -40°C ~ 125°C (TC) 96-TFBGA 96-FBGA (14x9) Surface Mount Volatile SDRAM - DDR4 DRAM 1.2GHz - -
MT40A256M16GE-083E AAT:B TR
Micron Technology Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 4G PARALLEL 1.2GHZ
Tape & Reel (TR) - 1.14 V ~ 1.26 V -40°C ~ 105°C (TC) 96-TFBGA 96-FBGA (14x9) Surface Mount Volatile SDRAM - DDR4 DRAM 1.2GHz - -
MT40A256M16GE-083E AAT:B TR
Micron Technology Inc.
1,950
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 1.2GHZ
Cut Tape (CT) - 1.14 V ~ 1.26 V -40°C ~ 105°C (TC) 96-TFBGA 96-FBGA (14x9) Surface Mount Volatile SDRAM - DDR4 DRAM 1.2GHz - -
MT40A256M16GE-083E AAT:B TR
Micron Technology Inc.
1,950
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 4G PARALLEL 1.2GHZ
- - 1.14 V ~ 1.26 V -40°C ~ 105°C (TC) 96-TFBGA 96-FBGA (14x9) Surface Mount Volatile SDRAM - DDR4 DRAM 1.2GHz - -