Mémoire - Zui Ai Technology（Taiwan）Company.

Series：

Voltage - Supply：

Operating Temperature：

Package / Case：

Supplier Device Package：

Memory Type：

Technology：

Memory Format：

Clock Frequency：

Access Time：

Write Cycle Time - Word, Page：

Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Series	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Series	Voltage - Supply	Operating Temperature	Package / Case	Supplier Device Package	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Write Cycle Time - Word, Page
	W9751G6KB-25	Winbond Electronics	20,933	3 jours	-	IC DRAM 512M PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 84WBGA	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	84-TFBGA	84-WBGA (8x12.5)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	15ns
	AS4C32M16D1A-5TIN	Alliance Memory，Inc.	1,812	3 jours	-	IC DRAM 512M PARALLEL 66TSOP II MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 66TSOP II	-	2.3 V ~ 2.7 V	-40°C ~ 85°C (TA)	66-TSSOP (0.400"，10.16mm Width)	66-TSOP II	Volatile	SDRAM - DDR	DRAM	200MHz	700ps	15ns
	MT46H32M16LFBF-5 IT:C	Micron Technology Inc.	17,277	3 jours	-	IC DRAM 512M PARALLEL 60VFBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 60VFBGA	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-VFBGA	60-VFBGA (8x9)	Volatile	SDRAM - Mobile LPDDR	DRAM	200MHz	5.0ns	15ns
	AS4C32M16SB-7TCN	Alliance Memory，Inc.	1,405	3 jours	-	IC DRAM 512M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 54TSOP	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Volatile	SDRAM	DRAM	143MHz	5.4ns	14ns
	IS42S16320D-7TL	ISSI，Integrated Silicon Solution Inc	915	3 jours	-	IC DRAM 512M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 54TSOP	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Volatile	SDRAM	DRAM	143MHz	5.4ns	-
	AS4C32M16SB-7TIN	Alliance Memory，Inc.	1,138	3 jours	-	IC DRAM 512M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 54TSOP	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Volatile	SDRAM	DRAM	143MHz	5.4ns	14ns
	IS42S16320F-7TLI	ISSI，Integrated Silicon Solution Inc	461	3 jours	-	IC DRAM 512M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 54TSOP	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Volatile	SDRAM	DRAM	143MHz	5.4ns	-
	AS4C32M16SA-7TIN	Alliance Memory，Inc.	332	3 jours	-	IC DRAM 512M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 54TSOP	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Volatile	SDRAM	DRAM	143MHz	5.4ns	2ns
	IS42S16320D-7TLI	ISSI，Integrated Silicon Solution Inc	1,190	3 jours	-	IC DRAM 512M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 54TSOP	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Volatile	SDRAM	DRAM	143MHz	5.4ns	-
	AS4C32M16SA-7BIN	Alliance Memory，Inc.	393	3 jours	-	IC DRAM 512M PARALLEL 54FBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 54FBGA	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TFBGA	54-FBGA (8x8)	Volatile	SDRAM	DRAM	143MHz	5.4ns	2ns
	W9751G6KB25I	Winbond Electronics	700	3 jours	-	IC DRAM 512M PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 84WBGA	-	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	84-TFBGA	84-WBGA (8x12.5)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	15ns
	AS4C32M16D2A-25BIN	Alliance Memory，Inc.	444	3 jours	-	IC DRAM 512M PARALLEL 84FBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 84FBGA	-	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	84-TFBGA	84-FBGA (8x12.5)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	15ns
	IS42S16320F-7BLI	ISSI，Integrated Silicon Solution Inc	186	3 jours	-	IC DRAM 512M PARALLEL 54TFBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 54TFBGA	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	54-TFBGA	54-TFBGA (8x13)	Volatile	SDRAM	DRAM	143MHz	5.4ns	-
	AS4C32M16D2A-25BCN	Alliance Memory，Inc.	1,161	3 jours	-	IC DRAM 512M PARALLEL 84FBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 84FBGA	-	1.7 V ~ 1.9 V	0°C ~ 95°C (TC)	84-TFBGA	84-FBGA (8x12.5)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	15ns
	IS43DR16320C-3DBL	ISSI，Integrated Silicon Solution Inc	472	3 jours	-	IC DRAM 512M PARALLEL 84TWBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 84TWBGA	-	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	84-TFBGA	84-TWBGA (8x12.5)	Volatile	SDRAM - DDR2	DRAM	333MHz	450ps	15ns
	AS4C32M16D2A-25BAN	Alliance Memory，Inc.	1,067	3 jours	-	IC DRAM 512M PARALLEL 84FBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 84FBGA	-	1.7 V ~ 1.9 V	-40°C ~ 105°C (TC)	84-TFBGA	84-FBGA (8x12.5)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	15ns
	IS43LR16320B-6BLI	ISSI，Integrated Silicon Solution Inc	205	3 jours	-	IC DRAM 512M PARALLEL 60TFBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 60TFBGA	-	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	60-TFBGA	60-TFBGA (8x10)	Volatile	SDRAM - Mobile LPDDR	DRAM	166MHz	5.5ns	12ns
	AS4C32M16SA-7TCN	Alliance Memory，Inc.	102	3 jours	-	IC DRAM 512M PARALLEL 54TSOP MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 54TSOP	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	54-TSOP (0.400"，10.16mm Width)	54-TSOP II	Volatile	SDRAM	DRAM	143MHz	5.4ns	2ns
	IS43DR16320E-3DBL	ISSI，Integrated Silicon Solution Inc	221	3 jours	-	IC DRAM 512M PARALLEL 84TWBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 84TWBGA	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	84-TFBGA	84-TWBGA (8x12.5)	Volatile	SDRAM - DDR2	DRAM	333MHz	450ns	15ns
	IS43DR16320E-25DBL	ISSI，Integrated Silicon Solution Inc	135	3 jours	-	IC DRAM 512M PARALLEL 84TWBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 84TWBGA	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	84-TFBGA	84-TWBGA (8x12.5)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ns	15ns

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