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- Conditions sélectionnées:
Découvrez les produits 4,552
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Memory Interface | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Supplier Device Package | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Memory Interface | Write Cycle Time - Word, Page | |
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|
|
Maxim Integrated |
3,955
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 1K 1WIRE 6TSOC
|
Cut Tape (CT) | - | - | - | - | - | - | - | - | - | - | - | - | ||
|
|
|
Maxim Integrated |
3,955
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 1K 1WIRE 6TSOC
|
- | - | - | - | - | - | - | - | - | - | - | - | - | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1020 MPQ: 1
|
IC DRAM 4G PARALLEL 1.33GHZ
|
- | - | 1.14 V ~ 1.26 V | -40°C ~ 105°C (TC) | - | - | 4Gb (256M x 16) | Volatile | SDRAM - DDR4 | DRAM | 1.33GHz | Parallel | - | ||
|
|
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Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1020 MPQ: 1
|
IC DRAM 4G PARALLEL 1.33GHZ
|
- | - | 1.14 V ~ 1.26 V | -40°C ~ 95°C (TC) | - | - | 4Gb (256M x 16) | Volatile | SDRAM - DDR4 | DRAM | 1.33GHz | Parallel | - | ||
|
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 44TSOP II
|
- | - | - | - | - | - | - | - | - | - | - | - | - | ||
|
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC SRAM 1M PARALLEL 44TSOP II
|
Tape & Reel (TR) | - | - | - | - | - | - | - | - | - | - | - | - | ||
|
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 44TSOP II
|
Cut Tape (CT) | - | - | - | - | - | - | - | - | - | - | - | - | ||
|
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 1M PARALLEL 44TSOP II
|
- | - | - | - | - | - | - | - | - | - | - | - | - | ||
|
|
Cypress Semiconductor Corp |
4,760
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 128M SPI 133MHZ
|
Cut Tape (CT) | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Cypress Semiconductor Corp |
4,760
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 128M SPI 133MHZ
|
- | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
|
Macronix |
470
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
S-NOR 128M
|
- | - | - | - | - | - | - | - | - | - | - | - | - | ||
|
|
Cypress Semiconductor Corp |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 64M PARALLEL 48TSOP
|
Cut Tape (CT) | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Cypress Semiconductor Corp |
1,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 64M PARALLEL 48TSOP
|
- | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
|
Alliance Memory，Inc. |
128
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G 32MX32 LPDDR2 134-BGA
|
- | - | - | - | - | - | - | - | - | - | - | - | - | ||
|
|
|
Alliance Memory，Inc. |
128
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 2G 128MX16 LPDDR2 134BGA
|
- | - | - | - | - | - | - | - | - | - | - | - | - | ||
|
|
|
Macronix |
480
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
S-NOR 512M
|
- | - | - | - | - | - | - | - | - | - | - | - | - | ||
|
|
|
Macronix |
480
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
S-NOR 1G
|
- | - | - | - | - | - | - | - | - | - | - | - | - | ||
|
|
Cypress Semiconductor Corp |
926
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 4M PARALLEL 44TSOP II
|
- | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
Cypress Semiconductor Corp |
926
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 4M PARALLEL 44TSOP II
|
- | - | - | - | - | - | - | - | - | - | - | - | - | |||
|
|
|
Cypress Semiconductor Corp |
1,036
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH MEMORY 48TSOP
|
- | - | - | - | - | - | - | - | - | - | - | - | - |
