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Découvrez les produits 95
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Operating Temperature | Package / Case | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Series | Operating Temperature | Package / Case | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
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Cypress Semiconductor Corp |
30
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28CDIP
|
- | -40°C ~ 85°C (TA) | 28-CDIP (0.300"，7.62mm) | 64Kb (8K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 35ns | 35ns | ||
|
|
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Honeywell Aerospace |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 256K PARALLEL 28CDIP
|
HTMOS | -55°C ~ 225°C (TA) | 28-CDIP (0.600"，15.24mm) | 256Kb (32K x 8) | Volatile | SRAM | SRAM | 20MHz | 50ns | 50ns | ||
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|
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Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 65 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28CDIP
|
- | -55°C ~ 125°C (TA) | 28-CDIP (0.300"，7.62mm) | 64Kb (8K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 35ns | 35ns | ||
|
|
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Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 26 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28CDIP
|
- | -55°C ~ 125°C (TA) | 28-CDIP (0.300"，7.62mm) | 64Kb (8K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 55ns | 55ns | ||
|
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 26 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28CDIP
|
- | 0°C ~ 70°C (TA) | 28-CDIP (0.300"，7.62mm) | 64Kb (8K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 35ns | 35ns | ||
|
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 26 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28CDIP
|
- | -40°C ~ 85°C (TA) | 28-CDIP (0.300"，7.62mm) | 64Kb (8K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 35ns | 35ns | ||
|
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 26 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28CDIP
|
- | 0°C ~ 70°C (TA) | 28-CDIP (0.300"，7.62mm) | 64Kb (8K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 45ns | 45ns | ||
|
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 26 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28CDIP
|
- | -55°C ~ 125°C (TA) | 28-CDIP (0.300"，7.62mm) | 64Kb (8K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 55ns | 55ns | ||
|
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 26 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28CDIP
|
- | -55°C ~ 125°C (TA) | 28-CDIP (0.300"，7.62mm) | 64Kb (8K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 55ns | 55ns | ||
|
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 26 MPQ: 1
|
IC NVSRAM 64K PARALLEL 28CDIP
|
- | -55°C ~ 125°C (TA) | 28-CDIP (0.300"，7.62mm) | 64Kb (8K x 8) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 35ns | 35ns | ||
|
|
Microchip Technology |
14
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28CDIP
|
- | -55°C ~ 125°C (TC) | 28-CDIP (0.600"，15.24mm) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 250ns | 10ms | |||
|
|
Microchip Technology |
14
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28CDIP
|
- | -55°C ~ 125°C (TC) | 28-CDIP (0.600"，15.24mm) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 200ns | 10ms | |||
|
|
Microchip Technology |
14
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28CDIP
|
- | -55°C ~ 125°C (TC) | 28-CDIP (0.600"，15.24mm) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 250ns | 10ms | |||
|
|
Microchip Technology |
14
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28CDIP
|
- | -55°C ~ 125°C (TC) | 28-CDIP (0.600"，15.24mm) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 150ns | 3ms | |||
|
|
Microchip Technology |
12
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28CDIP
|
- | -55°C ~ 125°C (TC) | 28-CDIP (0.600"，15.24mm) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 200ns | 10ms | |||
|
|
Microchip Technology |
12
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28CDIP
|
- | -55°C ~ 125°C (TC) | 28-CDIP (0.600"，15.24mm) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 150ns | 10ms | |||
|
|
Microchip Technology |
14
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC EEPROM 256K PARALLEL 28CDIP
|
- | -55°C ~ 125°C (TC) | 28-CDIP (0.600"，15.24mm) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 150ns | 10ms | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 14 MPQ: 1
|
IC EEPROM 256K PARALLEL 28CDIP
|
- | -55°C ~ 125°C (TC) | 28-CDIP (0.600"，15.24mm) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 200ns | 10ms | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 14 MPQ: 1
|
IC EEPROM 256K PARALLEL 28CDIP
|
- | -55°C ~ 125°C (TC) | 28-CDIP (0.600"，15.24mm) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 250ns | 10ms | |||
|
|
Microchip Technology |
Enquête
|
- |
-
|
MOQ: 14 MPQ: 1
|
IC EEPROM 256K PARALLEL 28CDIP
|
- | -55°C ~ 125°C (TC) | 28-CDIP (0.600"，15.24mm) | 256Kb (32K x 8) | Non-Volatile | EEPROM | EEPROM | - | 150ns | 10ms |
