Access Time:
Write Cycle Time - Word, Page:
Découvrez les produits 12
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Operating Temperature Memory Size Access Time Write Cycle Time - Word, Page
BQ4015YMA-85
Texas Instruments
Enquête
-
-
MOQ: 12  MPQ: 1
IC NVSRAM 4M PARALLEL 32DIP
4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 4Mb (512K x 8) 85ns 85ns
BQ4015MA-70
Texas Instruments
Enquête
-
-
MOQ: 12  MPQ: 1
IC NVSRAM 4M PARALLEL 32DIP
4.75 V ~ 5.5 V 0°C ~ 70°C (TA) 4Mb (512K x 8) 70ns 70ns
BQ4015YMA-70
Texas Instruments
Enquête
-
-
MOQ: 12  MPQ: 1
IC NVSRAM 4M PARALLEL 32DIP
4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 4Mb (512K x 8) 70ns 70ns
BQ4013YMA-70N
Texas Instruments
Enquête
-
-
MOQ: 24  MPQ: 1
IC NVSRAM 1M PARALLEL 32DIP
4.5 V ~ 5.5 V -40°C ~ 85°C (TA) 1Mb (128K x 8) 70ns 70ns
BQ4013YMA-85
Texas Instruments
Enquête
-
-
MOQ: 24  MPQ: 1
IC NVSRAM 1M PARALLEL 32DIP
4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 1Mb (128K x 8) 85ns 85ns
BQ4013YMA-70
Texas Instruments
Enquête
-
-
MOQ: 24  MPQ: 1
IC NVSRAM 1M PARALLEL 32DIP
4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 1Mb (128K x 8) 70ns 70ns
BQ4015LYMA-70N
Texas Instruments
Enquête
-
-
MOQ: 12  MPQ: 1
IC NVSRAM 4M PARALLEL 32DIP
3 V ~ 3.6 V -40°C ~ 85°C (TA) 4Mb (512K x 8) 70ns 70ns
BQ4013MA-120
Texas Instruments
Enquête
-
-
MOQ: 24  MPQ: 1
IC NVSRAM 1M PARALLEL 32DIP
4.75 V ~ 5.5 V 0°C ~ 70°C (TA) 1Mb (128K x 8) 120ns 120ns
BQ4013MA-85
Texas Instruments
Enquête
-
-
MOQ: 24  MPQ: 1
IC NVSRAM 1M PARALLEL 32DIP
4.75 V ~ 5.5 V 0°C ~ 70°C (TA) 1Mb (128K x 8) 85ns 85ns
BQ4013YMA-120
Texas Instruments
Enquête
-
-
MOQ: 24  MPQ: 1
IC NVSRAM 1M PARALLEL 32DIP
4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 1Mb (128K x 8) 120ns 120ns
BQ4013YMA-85N
Texas Instruments
Enquête
-
-
MOQ: 24  MPQ: 1
IC NVSRAM 1M PARALLEL 32DIP
4.5 V ~ 5.5 V -40°C ~ 85°C (TA) 1Mb (128K x 8) 85ns 85ns
BQ4015MA-85
Texas Instruments
Enquête
-
-
MOQ: 12  MPQ: 1
IC NVSRAM 4M PARALLEL 32DIP
4.75 V ~ 5.5 V 0°C ~ 70°C (TA) 4Mb (512K x 8) 85ns 85ns