- Voltage - Supply：
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- Operating Temperature：
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- Memory Size：
-
- Access Time：
-
- Write Cycle Time - Word, Page：
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- Conditions sélectionnées:
Découvrez les produits 74
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Memory Size | Access Time | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Voltage - Supply | Operating Temperature | Memory Size | Access Time | Write Cycle Time - Word, Page | |
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 110 MPQ: 1
|
IC NVSRAM 4M PARALLEL 32EDIP
|
4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 4Mb (512K x 8) | 100ns | 100ns | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 11 MPQ: 1
|
IC NVSRAM 4M PARALLEL 32EDIP
|
3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 4Mb (512K x 8) | 150ns | 150ns | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 110 MPQ: 1
|
IC NVSRAM 4M PARALLEL 32EDIP
|
4.75 V ~ 5.25 V | 0°C ~ 70°C (TA) | 4Mb (512K x 8) | 70ns | 70ns | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 11 MPQ: 1
|
IC NVSRAM 4M PARALLEL 32EDIP
|
3 V ~ 3.6 V | 0°C ~ 70°C (TA) | 4Mb (512K x 8) | 100ns | 100ns | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 11 MPQ: 1
|
IC NVSRAM 4M PARALLEL 32EDIP
|
4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 4Mb (512K x 8) | 70ns | 70ns | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 11 MPQ: 1
|
IC NVSRAM 4M PARALLEL 32EDIP
|
4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 4Mb (512K x 8) | 70ns | 70ns | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 11 MPQ: 1
|
IC NVSRAM 4M PARALLEL 32EDIP
|
4.75 V ~ 5.25 V | -40°C ~ 85°C (TA) | 4Mb (512K x 8) | 70ns | 70ns | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 22 MPQ: 1
|
IC NVSRAM 1M PARALLEL 32EDIP
|
3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 1Mb (128K x 8) | 100ns | 100ns | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 11 MPQ: 1
|
IC NVSRAM 2M PARALLEL 32EDIP
|
3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 2Mb (256K x 8) | 100ns | 100ns | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 11 MPQ: 1
|
IC NVSRAM 4M PARALLEL 32EDIP
|
4.75 V ~ 5.25 V | -40°C ~ 85°C (TA) | 4Mb (512K x 8) | 100ns | 100ns | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 11 MPQ: 1
|
IC NVSRAM 4M PARALLEL 32EDIP
|
3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 4Mb (512K x 8) | 100ns | 100ns | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 11 MPQ: 1
|
IC NVSRAM 4M PARALLEL 32EDIP
|
4.5 V ~ 5.5 V | -40°C ~ 85°C (TA) | 4Mb (512K x 8) | 100ns | 100ns | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC NVSRAM 2M PARALLEL 32EDIP
|
3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 2Mb (256K x 8) | 100ns | 100ns | ||
|
|
|
Maxim Integrated |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC NVSRAM 2M PARALLEL 32EDIP
|
4.5 V ~ 5.5 V | 0°C ~ 70°C (TA) | 2Mb (256K x 8) | 85ns | 85ns |
