Conditions sélectionnées:
Découvrez les produits 75
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Operating Temperature Memory Size Access Time Write Cycle Time - Word, Page
DS1225AB-200+
Maxim Integrated
163
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 64K PARALLEL 28EDIP
4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 64Kb (8K x 8) 200ns 200ns
DS1230AB-100+
Maxim Integrated
253
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 256K PARALLEL 28EDIP
4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 256Kb (32K x 8) 100ns 100ns
DS1230Y-100+
Maxim Integrated
335
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 256K PARALLEL 28EDIP
4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 256Kb (32K x 8) 100ns 100ns
DS1230AB-120+
Maxim Integrated
316
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 256K PARALLEL 28EDIP
4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 256Kb (32K x 8) 120ns 120ns
DS1230Y-150+
Maxim Integrated
142
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 256K PARALLEL 28EDIP
4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 256Kb (32K x 8) 150ns 150ns
DS1230Y-120+
Maxim Integrated
635
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 256K PARALLEL 28EDIP
4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 256Kb (32K x 8) 120ns 120ns
DS1225AB-150+
Maxim Integrated
109
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 64K PARALLEL 28EDIP
4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 64Kb (8K x 8) 150ns 150ns
DS1225AD-150+
Maxim Integrated
191
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 64K PARALLEL 28EDIP
4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 64Kb (8K x 8) 150ns 150ns
DS1225AD-85+
Maxim Integrated
133
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 64K PARALLEL 28EDIP
4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 64Kb (8K x 8) 85ns 85ns
DS1225AD-200+
Maxim Integrated
192
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 64K PARALLEL 28EDIP
4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 64Kb (8K x 8) 200ns 200ns
DS1225Y-150+
Maxim Integrated
280
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 64K PARALLEL 28EDIP
4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 64Kb (8K x 8) 150ns 150ns
DS1225Y-200+
Maxim Integrated
122
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 64K PARALLEL 28EDIP
4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 64Kb (8K x 8) 200ns 200ns
DS1225AD-150IND+
Maxim Integrated
230
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 64K PARALLEL 28EDIP
4.5 V ~ 5.5 V -40°C ~ 85°C (TA) 64Kb (8K x 8) 150ns 150ns
DS1230Y-70IND+
Maxim Integrated
3,477
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 256K PARALLEL 28EDIP
4.5 V ~ 5.5 V -40°C ~ 85°C (TA) 256Kb (32K x 8) 70ns 70ns
DS1230Y-200+
Maxim Integrated
148
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 256K PARALLEL 28EDIP
4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 256Kb (32K x 8) 200ns 200ns
DS1225AD-200IND+
Maxim Integrated
202
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 64K PARALLEL 28EDIP
4.5 V ~ 5.5 V -40°C ~ 85°C (TA) 64Kb (8K x 8) 200ns 200ns
DS1225AB-170+
Maxim Integrated
188
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 64K PARALLEL 28EDIP
4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 64Kb (8K x 8) 170ns 170ns
DS1225AB-85+
Maxim Integrated
84
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 64K PARALLEL 28EDIP
4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 64Kb (8K x 8) 85ns 85ns
DS1230AB-70+
Maxim Integrated
81
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 256K PARALLEL 28EDIP
4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 256Kb (32K x 8) 70ns 70ns
DS1230AB-70IND+
Maxim Integrated
83
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 256K PARALLEL 28EDIP
4.75 V ~ 5.25 V -40°C ~ 85°C (TA) 256Kb (32K x 8) 70ns 70ns