- Packaging：
-
- Voltage - Supply：
-
- Operating Temperature：
-
- Memory Size：
-
- Memory Type：
-
- Technology：
-
- Memory Format：
-
- Clock Frequency：
-
- Conditions sélectionnées:
Découvrez les produits 14
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
|
|
|
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 512M PARALLEL 400MHZ
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | -40°C ~ 105°C (TA) | 512Mb (64M x 8) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ps | 15ns | ||
|
|
|
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 400MHZ
|
Cut Tape (CT) | 1.7 V ~ 1.9 V | -40°C ~ 105°C (TA) | 512Mb (64M x 8) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ps | 15ns | ||
|
|
|
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 400MHZ
|
- | 1.7 V ~ 1.9 V | -40°C ~ 105°C (TA) | 512Mb (64M x 8) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ps | 15ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 512M PARALLEL 60FBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | -40°C ~ 95°C (TC) | 512Mb (64M x 8) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ps | 15ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 1G PARALLEL 60FBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | -40°C ~ 105°C (TC) | 1Gb (128M x 8) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ps | 15ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 1G PARALLEL 60FBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 1Gb (128M x 8) | Volatile | SDRAM - DDR2 | DRAM | 333MHz | 450ps | 15ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 60FBGA
|
Cut Tape (CT) | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 1Gb (128M x 8) | Volatile | SDRAM - DDR2 | DRAM | 333MHz | 450ps | 15ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 60FBGA
|
- | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 1Gb (128M x 8) | Volatile | SDRAM - DDR2 | DRAM | 333MHz | 450ps | 15ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1518 MPQ: 1
|
IC DRAM 1G PARALLEL 60FBGA
|
Tray | 1.7 V ~ 1.9 V | -40°C ~ 105°C (TC) | 1Gb (128M x 8) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ps | 15ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1518 MPQ: 1
|
IC DRAM 512M PARALLEL 60FBGA
|
Tray | 1.7 V ~ 1.9 V | -40°C ~ 95°C (TC) | 512Mb (64M x 8) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ps | 15ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC DRAM 1G PARALLEL 60FBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 1Gb (128M x 8) | Volatile | SDRAM - DDR2 | DRAM | 533MHz | 350ps | 15ns | ||
|
|
|
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1518 MPQ: 1
|
IC DRAM 512M PARALLEL 400MHZ
|
Tray | 1.7 V ~ 1.9 V | -40°C ~ 105°C (TA) | 512Mb (64M x 8) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ps | 15ns | ||
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 2000 MPQ: 1
|
IC NVSRAM 16M PARALLEL
|
Tape & Reel (TR) | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 16Mb (1M x 16) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 25ns | 25ns | |||
|
|
Cypress Semiconductor Corp |
Enquête
|
- |
-
|
MOQ: 112 MPQ: 1
|
IC NVSRAM 16M PARALLEL
|
Tray | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 16Mb (1M x 16) | Non-Volatile | NVSRAM (Non-Volatile SRAM) | NVSRAM | - | 25ns | 25ns |
