- Operating Temperature：
-
- Memory Size：
-
- Clock Frequency：
-
- Conditions sélectionnées:
Découvrez les produits 25
 |
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Memory Size | Clock Frequency | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Memory Size | Clock Frequency | |
|
|
|
ISSI，Integrated Silicon Solution Inc |
190
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 60TFBGA
|
-40°C ~ 85°C (TA) | 256Mb (16M x 16) | 166MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
16
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 60TFBGA
|
-40°C ~ 85°C (TA) | 256Mb (16M x 16) | 200MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 380 MPQ: 1
|
IC DRAM 256M PARALLEL 60TFBGA
|
0°C ~ 70°C (TA) | 256Mb (16M x 16) | 166MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 380 MPQ: 1
|
IC DRAM 256M PARALLEL 60TFBGA
|
0°C ~ 70°C (TA) | 256Mb (16M x 16) | 200MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 190 MPQ: 1
|
IC DRAM 256M PARALLEL 60TFBGA
|
-40°C ~ 85°C (TA) | 256Mb (16M x 16) | 166MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 190 MPQ: 1
|
IC DRAM 256M PARALLEL 60TFBGA
|
-40°C ~ 85°C (TA) | 256Mb (16M x 16) | 200MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 190 MPQ: 1
|
IC DRAM 512M PARALLEL 166MHZ
|
0°C ~ 70°C (TA) | 512Mb (32M x 16) | 166MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 190 MPQ: 1
|
IC DRAM 512M PARALLEL 200MHZ
|
0°C ~ 70°C (TA) | 512Mb (32M x 16) | 200MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 190 MPQ: 1
|
IC DRAM 512M PARALLEL 166MHZ
|
0°C ~ 70°C (TA) | 512Mb (64M x 8) | 166MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 190 MPQ: 1
|
IC DRAM 512M PARALLEL 200MHZ
|
0°C ~ 70°C (TA) | 512Mb (64M x 8) | 200MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 190 MPQ: 1
|
IC DRAM 512M PARALLEL 166MHZ
|
-40°C ~ 85°C (TA) | 512Mb (32M x 16) | 166MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 190 MPQ: 1
|
IC DRAM 512M PARALLEL 200MHZ
|
-40°C ~ 85°C (TA) | 512Mb (32M x 16) | 200MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 190 MPQ: 1
|
IC DRAM 512M PARALLEL 166MHZ
|
-40°C ~ 85°C (TA) | 512Mb (64M x 8) | 166MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 190 MPQ: 1
|
IC DRAM 512M PARALLEL 166MHZ
|
0°C ~ 70°C (TA) | 512Mb (32M x 16) | 166MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 190 MPQ: 1
|
IC DRAM 512M PARALLEL 166MHZ
|
0°C ~ 70°C (TA) | 512Mb (64M x 8) | 166MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 190 MPQ: 1
|
IC DRAM 256M PARALLEL 60TFBGA
|
-40°C ~ 105°C (TA) | 256Mb (16M x 16) | 166MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 190 MPQ: 1
|
IC DRAM 512M PARALLEL 200MHZ
|
-40°C ~ 85°C (TA) | 512Mb (64M x 8) | 200MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 190 MPQ: 1
|
IC DRAM 512M PARALLEL 200MHZ
|
0°C ~ 70°C (TA) | 512Mb (32M x 16) | 200MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 190 MPQ: 1
|
IC DRAM 512M PARALLEL 200MHZ
|
0°C ~ 70°C (TA) | 512Mb (64M x 8) | 200MHz | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 190 MPQ: 1
|
IC DRAM 512M PARALLEL 166MHZ
|
-40°C ~ 85°C (TA) | 512Mb (32M x 16) | 166MHz |
