Mémoire - Zui Ai Technology（Taiwan）Company.

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Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Package / Case	Memory Size	Technology	Clock Frequency	Access Time	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Package / Case	Memory Size	Technology	Clock Frequency	Access Time	Write Cycle Time - Word, Page
	MT47H64M8CB-25:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tray	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-FBGA	512Mb (64M x 8)	SDRAM - DDR2	400MHz	400ps	15ns
	MT47H64M8CB-25:B TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tape & Reel (TR)	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-FBGA	512Mb (64M x 8)	SDRAM - DDR2	400MHz	400ps	15ns
	MT47H64M8CB-37E IT:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tray	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	60-FBGA	512Mb (64M x 8)	SDRAM - DDR2	267MHz	500ps	15ns
	MT47H64M8CB-37E IT:B TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tape & Reel (TR)	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	60-FBGA	512Mb (64M x 8)	SDRAM - DDR2	267MHz	500ps	15ns
	MT47H64M8CB-5E IT:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tray	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	60-FBGA	512Mb (64M x 8)	SDRAM - DDR2	200MHz	600ps	15ns
	MT47H64M8CB-5E IT:B TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tape & Reel (TR)	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	60-FBGA	512Mb (64M x 8)	SDRAM - DDR2	200MHz	600ps	15ns
	MT47H128M4CB-37E:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tray	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-FBGA	512Mb (128M x 4)	SDRAM - DDR2	267MHz	500ps	15ns
	MT47H128M4CB-37E:B TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tape & Reel (TR)	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-FBGA	512Mb (128M x 4)	SDRAM - DDR2	267MHz	500ps	15ns
	MT47H128M4CB-3:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tray	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-FBGA	512Mb (128M x 4)	SDRAM - DDR2	333MHz	450ps	15ns
	MT47H128M4CB-3:B TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tape & Reel (TR)	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-FBGA	512Mb (128M x 4)	SDRAM - DDR2	333MHz	450ps	15ns
	MT47H128M4CB-5E:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tray	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-FBGA	512Mb (128M x 4)	SDRAM - DDR2	200MHz	600ps	15ns
	MT47H128M4CB-5E:B TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tape & Reel (TR)	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-FBGA	512Mb (128M x 4)	SDRAM - DDR2	200MHz	600ps	15ns
	MT47H64M8CB-37E:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 2000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tray	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-FBGA	512Mb (64M x 8)	SDRAM - DDR2	267MHz	500ps	15ns
	MT47H64M8CB-37E:B TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 2000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tape & Reel (TR)	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-FBGA	512Mb (64M x 8)	SDRAM - DDR2	267MHz	500ps	15ns
	MT47H64M8CB-37V:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tray	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-FBGA	512Mb (64M x 8)	SDRAM - DDR2	267MHz	500ps	15ns
	MT47H64M8CB-37V:B TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tape & Reel (TR)	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-FBGA	512Mb (64M x 8)	SDRAM - DDR2	267MHz	500ps	15ns
	MT47H64M8CB-3:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tray	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-FBGA	512Mb (64M x 8)	SDRAM - DDR2	333MHz	450ps	15ns
	MT47H64M8CB-3:B TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 1000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tape & Reel (TR)	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-FBGA	512Mb (64M x 8)	SDRAM - DDR2	333MHz	450ps	15ns
	MT47H64M8CB-5E:B	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 2000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tray	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-FBGA	512Mb (64M x 8)	SDRAM - DDR2	200MHz	600ps	15ns
	MT47H64M8CB-5E:B TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 512M PARALLEL 60FBGA MOQ: 2000 MPQ: 1	IC DRAM 512M PARALLEL 60FBGA	Tape & Reel (TR)	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	60-FBGA	512Mb (64M x 8)	SDRAM - DDR2	200MHz	600ps	15ns