Découvrez les produits 14
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Series Voltage - Supply Memory Size Access Time Memory Interface
TC58BYG0S3HBAI6
Toshiba Memory America,Inc.
338
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 1G PARALLEL 67VFBGA
Tray Benand 1.7 V ~ 1.95 V 1Gb (128M x 8) 25ns Parallel
TC58NVG0S3HBAI6
Toshiba Memory America,Inc.
308
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 1G PARALLEL 67VFBGA
Tray - 2.7 V ~ 3.6 V 1Gb (128M x 8) 25ns Parallel
TC58BYG1S3HBAI6
Toshiba Memory America,Inc.
676
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 2G PARALLEL 67VFBGA
Tray Benand 1.7 V ~ 1.95 V 2Gb (256M x 8) 25ns Parallel
TC58NYG1S3HBAI6
Toshiba Memory America,Inc.
459
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 2G PARALLEL 67VFBGA
Tray - 1.7 V ~ 1.95 V 2Gb (256M x 8) 25ns Parallel
TC58NVG1S3HBAI6
Toshiba Memory America,Inc.
338
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 2G PARALLEL 67VFBGA
Tray - 2.7 V ~ 3.6 V 2Gb (256M x 8) 25ns Parallel
TC58NVG2S0HBAI6
Toshiba Memory America,Inc.
285
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 4G PARALLEL 67VFBGA
Tray - 2.7 V ~ 3.6 V 4Gb (512M x 8) 25ns Parallel
TC58BYG2S0HBAI6
Toshiba Memory America,Inc.
12
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH 4G PARALLEL 67VFBGA
Tray Benand 1.7 V ~ 1.95 V 4Gb (512M x 8) 25ns Parallel
TC58BVG0S3HBAI6
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 338  MPQ: 1
IC FLASH 1G PARALLEL 67VFBGA
Tray Benand 2.7 V ~ 3.6 V 1Gb (128M x 8) 25ns Parallel
TC58NYG0S3HBAI6
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 338  MPQ: 1
IC FLASH 1G PARALLEL 67VFBGA
Tray - 1.7 V ~ 1.95 V 1Gb (128M x 8) 25ns Parallel
TC58BVG1S3HBAI6
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 338  MPQ: 1
IC FLASH 2G PARALLEL 67VFBGA
Tray Benand 2.7 V ~ 3.6 V 2Gb (256M x 8) 25ns Parallel
TC58NYG2S0HBAI6
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 338  MPQ: 1
IC FLASH 4G PARALLEL 67VFBGA
Tray - 1.7 V ~ 1.95 V 4Gb (512M x 8) 25ns Parallel
TH58BYG2S3HBAI6
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 338  MPQ: 1
IC FLASH 4G PARALLEL 67VFBGA
Tray Benand 1.7 V ~ 1.95 V 4Gb (512M x 8) 25ns Parallel
TH58NYG3S0HBAI6
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 338  MPQ: 1
IC FLASH 8G PARALLEL 67VFBGA
Tray - 1.7 V ~ 1.95 V 8Gb (1G x 8) 25ns Parallel
TH58BYG3S0HBAI6
Toshiba Memory America,Inc.
Enquête
-
-
MOQ: 338  MPQ: 1
8GB SLC NAND 24NM BGA 6.5X8 1.8V
- Benand 1.7 V ~ 1.95 V 8Gb (1G x 8) - -