Mémoire - Zui Ai Technology（Taiwan）Company.

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		Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Memory Interface
		Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Memory Interface
			W631GG8MB-12	Winbond Electronics	232	3 jours	-	IC SDRAM 1GBIT 800MHZ 78BGA MOQ: 1 MPQ: 1	IC SDRAM 1GBIT 800MHZ 78BGA	Tray	-	-	-	-	-	-	-	-	-
			W632GG8MB-12	Winbond Electronics	242	3 jours	-	IC DRAM 2G PARALLEL 78VFBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 78VFBGA	Tray	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	800MHz	20ns	Parallel
			W631GG8MB-12 TR	Winbond Electronics	Enquête	-	-	IC SDRAM 1GBIT 800MHZ 78BGA MOQ: 2000 MPQ: 1	IC SDRAM 1GBIT 800MHZ 78BGA	Tape & Reel (TR)	-	-	-	-	-	-	-	-	-
			W632GG8MB-11 TR	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 933MHZ MOQ: 2000 MPQ: 1	IC DRAM 2G PARALLEL 933MHZ	Tape & Reel (TR)	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	933MHz	20ns	Parallel
			W632GG8MB-12 TR	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 78VFBGA MOQ: 2000 MPQ: 1	IC DRAM 2G PARALLEL 78VFBGA	Tape & Reel (TR)	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	800MHz	20ns	Parallel
			W632GG8MB-15 TR	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 667MHZ MOQ: 2000 MPQ: 1	IC DRAM 2G PARALLEL 667MHZ	Tape & Reel (TR)	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	667MHz	20ns	Parallel
			W632GG8MB-11	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 933MHZ MOQ: 242 MPQ: 1	IC DRAM 2G PARALLEL 933MHZ	Tray	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	933MHz	20ns	Parallel
			W632GG8MB-15	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 667MHZ MOQ: 242 MPQ: 1	IC DRAM 2G PARALLEL 667MHZ	Tray	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	667MHz	20ns	Parallel
			W632GG8MB12I TR	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 800MHZ MOQ: 2000 MPQ: 1	IC DRAM 2G PARALLEL 800MHZ	Tape & Reel (TR)	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	800MHz	20ns	Parallel
			W632GG8MB15I TR	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 667MHZ MOQ: 2000 MPQ: 1	IC DRAM 2G PARALLEL 667MHZ	Tape & Reel (TR)	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	667MHz	20ns	Parallel
			W632GG8MB12I	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 800MHZ MOQ: 242 MPQ: 1	IC DRAM 2G PARALLEL 800MHZ	Tray	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	800MHz	20ns	Parallel
			W632GG8MB15I	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 667MHZ MOQ: 242 MPQ: 1	IC DRAM 2G PARALLEL 667MHZ	Tray	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	667MHz	20ns	Parallel
			W632GG8MB-09	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 1066MHZ MOQ: 242 MPQ: 1	IC DRAM 2G PARALLEL 1066MHZ	Tray	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	1066MHz	20ns	Parallel

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