- Operating Temperature：
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- Memory Size：
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- Clock Frequency：
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- Conditions sélectionnées:
Découvrez les produits 23
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Memory Size | Clock Frequency | Access Time | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Operating Temperature | Memory Size | Clock Frequency | Access Time | |
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 288M PARALLEL 400MHZ
|
0°C ~ 70°C (TA) | 288Mb (8M x 36) | 400MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 288M PARALLEL 400MHZ
|
0°C ~ 70°C (TA) | 288Mb (8M x 36) | 400MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 288M PARALLEL 300MHZ
|
-40°C ~ 85°C (TA) | 288Mb (16M x 18) | 300MHz | 20ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 288M PARALLEL 300MHZ
|
-40°C ~ 85°C (TA) | 288Mb (8M x 36) | 300MHz | 20ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 288M PARALLEL 300MHZ
|
-40°C ~ 85°C (TA) | 288Mb (32M x 9) | 300MHz | 20ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 288M PARALLEL 300MHZ
|
-40°C ~ 85°C (TA) | 288Mb (32M x 9) | 300MHz | 20ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 288M PARALLEL 400MHZ
|
-40°C ~ 85°C (TA) | 288Mb (16M x 18) | 400MHz | 20ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 288M PARALLEL 400MHZ
|
-40°C ~ 85°C (TA) | 288Mb (32M x 9) | 400MHz | 20ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 288M PARALLEL 400MHZ
|
-40°C ~ 85°C (TA) | 288Mb (32M x 9) | 400MHz | 20ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 288M PARALLEL 400MHZ
|
-40°C ~ 85°C (TA) | 288Mb (8M x 36) | 400MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 576M PARALLEL 400MHZ
|
0°C ~ 95°C (TC) | 576Mb (16M x 36) | 400MHz | 15ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 576M PARALLEL 300MHZ
|
0°C ~ 95°C (TC) | 576Mb (64M x 9) | 300MHz | 20ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 576M PARALLEL 300MHZ
|
-40°C ~ 85°C (TA) | 576Mb (64M x 9) | 300MHz | 20ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 576M PARALLEL 300MHZ
|
0°C ~ 95°C (TC) | 576Mb (32M x 18) | 300MHz | 20ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 576M PARALLEL 400MHZ
|
0°C ~ 95°C (TC) | 576Mb (64M x 9) | 400MHz | 20ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 576M PARALLEL 300MHZ
|
0°C ~ 70°C (TA) | 576Mb (32M x 18) | 300MHz | 20ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 576M PARALLEL 400MHZ
|
0°C ~ 70°C (TA) | 576Mb (64M x 9) | 400MHz | 20ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 576M PARALLEL 400MHZ
|
0°C ~ 95°C (TC) | 576Mb (32M x 18) | 400MHz | 20ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 104 MPQ: 1
|
IC DRAM 576M PARALLEL 400MHZ
|
0°C ~ 70°C (TA) | 576Mb (32M x 18) | 400MHz | 20ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 0 MPQ: 1
|
IC DRAM 288M PARALLEL 144TWBGA
|
0°C ~ 70°C (TA) | 288Mb (16M x 18) | 300MHz | 20ns |
