Découvrez les produits 29
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Memory Size Technology Clock Frequency Access Time
MT41J256M8HX-15E IT:D TR
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 78FBGA
Tape & Reel (TR) 1.425 V ~ 1.575 V -40°C ~ 95°C (TC) 2Gb (256M x 8) SDRAM - DDR3 667MHz 13.5ns
MT41J256M8HX-15E IT:D TR
Micron Technology Inc.
Enquête
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MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 78FBGA
Cut Tape (CT) 1.425 V ~ 1.575 V -40°C ~ 95°C (TC) 2Gb (256M x 8) SDRAM - DDR3 667MHz 13.5ns
MT41J256M8HX-15E IT:D TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 78FBGA
- 1.425 V ~ 1.575 V -40°C ~ 95°C (TC) 2Gb (256M x 8) SDRAM - DDR3 667MHz 13.5ns
MT41J256M8HX-15E:D TR
Micron Technology Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 2G PARALLEL 78FBGA
Tape & Reel (TR) 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 2Gb (256M x 8) SDRAM - DDR3 667MHz 13.5ns
MT41J256M8HX-15E:D TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 78FBGA
Cut Tape (CT) 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 2Gb (256M x 8) SDRAM - DDR3 667MHz 13.5ns
MT41J256M8HX-15E:D TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 78FBGA
- 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 2Gb (256M x 8) SDRAM - DDR3 667MHz 13.5ns
MT40A1G4HX-083E:A
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 4G PARALLEL 78FBGA
Tray 1.14 V ~ 1.26 V 0°C ~ 95°C (TC) 4Gb (1G x 4) SDRAM - DDR4 1.2GHz -
MT40A512M8HX-083E:A
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 4G PARALLEL 78FBGA
Tray 1.14 V ~ 1.26 V 0°C ~ 95°C (TC) 4Gb (512M x 8) SDRAM - DDR4 1.2GHz -
MT40A512M8HX-093E:A
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 4G PARALLEL 78FBGA
Tray 1.14 V ~ 1.26 V 0°C ~ 95°C (TC) 4Gb (512M x 8) SDRAM - DDR4 1067MHz -
MT41J1G4THD-15E:D
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 4G PARALLEL 78FBGA
Tray 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 4Gb (1G x 4) SDRAM - DDR3 667MHz -
MT41J256M8HX-125:D
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 78FBGA
Tray 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 2Gb (256M x 8) SDRAM - DDR3 800MHz 13.75ns
MT41J256M8HX-15E IT:D
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 78FBGA
Tray 1.425 V ~ 1.575 V -40°C ~ 95°C (TC) 2Gb (256M x 8) SDRAM - DDR3 667MHz 13.5ns
MT41J256M8HX-15E:D
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 78FBGA
Tray 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 2Gb (256M x 8) SDRAM - DDR3 667MHz 13.5ns
MT41J256M8HX-187E:D
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 78FBGA
Tray 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 2Gb (256M x 8) SDRAM - DDR3 533MHz 13.125ns
MT41J512M4HX-125:D
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 78FBGA
Tray 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 2Gb (512M x 4) SDRAM - DDR3 800MHz 13.75ns
MT41J512M4HX-15E:D
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 78FBGA
Tray 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 2Gb (512M x 4) SDRAM - DDR3 667MHz 13.5ns
MT41J512M4HX-187E:D
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 78FBGA
Tray 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 2Gb (512M x 4) SDRAM - DDR3 533MHz 13.125ns
MT41J512M8THD-15E:D
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 4G PARALLEL 78FBGA
Tray 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 4Gb (512M x 8) SDRAM - DDR3 667MHz 13.5ns
MT41K256M8HX-15E:D
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 78FBGA
Tray 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 2Gb (256M x 8) SDRAM - DDR3L 667MHz 13.5ns
MT41K256M8HX-187E:D
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 78FBGA
Tray 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 2Gb (256M x 8) SDRAM - DDR3L 533MHz 13.125ns