Découvrez les produits 48
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Memory Size Technology Clock Frequency Access Time
MT41J128M16HA-125 IT:D
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 96FBGA
Tray 1.425 V ~ 1.575 V -40°C ~ 95°C (TC) 2Gb (128M x 16) SDRAM - DDR3 800MHz 13.75ns
MT41J128M16HA-125:D
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 96FBGA
Tray 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 2Gb (128M x 16) SDRAM - DDR3 800MHz 13.75ns
MT41J128M16HA-125G:D
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 96FBGA
Tray 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 2Gb (128M x 16) SDRAM - DDR3 800MHz 13.75ns
MT41J128M16HA-15E IT:D
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 96FBGA
Tray 1.425 V ~ 1.575 V -40°C ~ 95°C (TC) 2Gb (128M x 16) SDRAM - DDR3 667MHz 13.5ns
MT41J128M16HA-15E:D
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 96FBGA
Tray 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 2Gb (128M x 16) SDRAM - DDR3 667MHz 13.5ns
MT41J128M16HA-187E:D
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 96FBGA
Tray 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 2Gb (128M x 16) SDRAM - DDR3 533MHz 13.125ns
MT41K128M16HA-15E:D
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 96FBGA
Tray 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 2Gb (128M x 16) SDRAM - DDR3L 667MHz 13.5ns
MT41K128M16HA-187E:D
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 96FBGA
Tray 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 2Gb (128M x 16) SDRAM - DDR3L 533MHz 13.125ns
MT41K128M16HA-15E IT:D
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 96FBGA
Tray 1.283 V ~ 1.45 V -40°C ~ 95°C (TC) 2Gb (128M x 16) SDRAM - DDR3L 667MHz 13.5ns
MT41J128M16HA-15E:D TR
Micron Technology Inc.
Enquête
-
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MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 96FBGA
Tape & Reel (TR) 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 2Gb (128M x 16) SDRAM - DDR3 667MHz 13.5ns
MT41J128M16HA-15E:D TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 96FBGA
Cut Tape (CT) 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 2Gb (128M x 16) SDRAM - DDR3 667MHz 13.5ns
MT41J128M16HA-15E:D TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 96FBGA
- 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 2Gb (128M x 16) SDRAM - DDR3 667MHz 13.5ns
MT41J128M16HA-107G:D
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 96FBGA
Bulk 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 2Gb (128M x 16) SDRAM - DDR3 933MHz 20ns
MT41J128M16HA-15E AAT:D
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 96FBGA
Bulk 1.425 V ~ 1.575 V -40°C ~ 105°C (TC) 2Gb (128M x 16) SDRAM - DDR3 667MHz 13.5ns
MT41J128M16HA-15E AIT:D
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 96FBGA
Bulk 1.425 V ~ 1.575 V -40°C ~ 95°C (TC) 2Gb (128M x 16) SDRAM - DDR3 667MHz 13.5ns
MT41J128M16HA-125G:D TR
Micron Technology Inc.
Enquête
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MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 96FBGA
Cut Tape (CT) 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 2Gb (128M x 16) SDRAM - DDR3 800MHz 13.75ns
MT41J128M16HA-125G:D TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 96FBGA
- 1.425 V ~ 1.575 V 0°C ~ 95°C (TC) 2Gb (128M x 16) SDRAM - DDR3 800MHz 13.75ns
MT41K256M16HA-107 IT:E
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
Tray 1.283 V ~ 1.45 V -40°C ~ 95°C (TC) 4Gb (256M x 16) SDRAM - DDR3L 933MHz 20ns
MT41K256M16HA-107:E
Micron Technology Inc.
Enquête
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MOQ: 1000  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
Tray 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 4Gb (256M x 16) SDRAM - DDR3L 933MHz 20ns
MT41K256M16HA-107G:E
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 4G PARALLEL 96FBGA
Tray 1.283 V ~ 1.45 V 0°C ~ 95°C (TC) 4Gb (256M x 16) SDRAM - DDR3L 933MHz 20ns