Mémoire - Zui Ai Technology（Taiwan）Company.

Packaging：

Voltage - Supply：

Operating Temperature：

Memory Size：

Memory Type：

Technology：

Memory Format：

Clock Frequency：

Access Time：

Write Cycle Time - Word, Page：

Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Write Cycle Time - Word, Page
	IS43LD32640B-25BPL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 2G PARALLEL 400MHZ MOQ: 1500 MPQ: 1	IC DRAM 2G PARALLEL 400MHZ	Tape & Reel (TR)	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	2Gb (64M x 32)	Volatile	SDRAM - Mobile LPDDR2-S4	DRAM	400MHz	-	15ns
	IS43LD32640B-18BPL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 2G PARALLEL 533MHZ MOQ: 1500 MPQ: 1	IC DRAM 2G PARALLEL 533MHZ	Tape & Reel (TR)	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	2Gb (64M x 32)	Volatile	SDRAM - Mobile LPDDR2-S4	DRAM	533MHz	-	15ns
	IS43LD32640B-25BPL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 2G PARALLEL 400MHZ MOQ: 168 MPQ: 1	IC DRAM 2G PARALLEL 400MHZ	Tray	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	2Gb (64M x 32)	Volatile	SDRAM - Mobile LPDDR2-S4	DRAM	400MHz	-	15ns
	IS43LD32640B-25BPLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 2G PARALLEL 400MHZ MOQ: 1500 MPQ: 1	IC DRAM 2G PARALLEL 400MHZ	Tape & Reel (TR)	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	2Gb (64M x 32)	Volatile	SDRAM - Mobile LPDDR2-S4	DRAM	400MHz	-	15ns
	IS43LD32640B-18BPL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 2G PARALLEL 533MHZ MOQ: 168 MPQ: 1	IC DRAM 2G PARALLEL 533MHZ	Tray	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	2Gb (64M x 32)	Volatile	SDRAM - Mobile LPDDR2-S4	DRAM	533MHz	-	15ns
	IS43LD32640B-18BPLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 2G PARALLEL 533MHZ MOQ: 1500 MPQ: 1	IC DRAM 2G PARALLEL 533MHZ	Tape & Reel (TR)	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	2Gb (64M x 32)	Volatile	SDRAM - Mobile LPDDR2-S4	DRAM	533MHz	-	15ns
	IS43LD32640B-25BPLI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 2G PARALLEL 400MHZ MOQ: 168 MPQ: 1	IC DRAM 2G PARALLEL 400MHZ	Tray	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	2Gb (64M x 32)	Volatile	SDRAM - Mobile LPDDR2-S4	DRAM	400MHz	-	15ns
	IS43LD32640B-18BPLI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 2G PARALLEL 533MHZ MOQ: 168 MPQ: 1	IC DRAM 2G PARALLEL 533MHZ	Tray	1.14 V ~ 1.95 V	-40°C ~ 85°C (TC)	2Gb (64M x 32)	Volatile	SDRAM - Mobile LPDDR2-S4	DRAM	533MHz	-	15ns
	MT46H32M32LFJG-5 IT:A	Micron Technology Inc.	Enquête	-	-	IC DRAM 1G PARALLEL 168VFBGA MOQ: 1000 MPQ: 1	IC DRAM 1G PARALLEL 168VFBGA	Tray	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	1Gb (32M x 32)	Volatile	SDRAM - Mobile LPDDR	DRAM	200MHz	5.0ns	15ns
	MT46H32M32LFJG-5 IT:A TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 1G PARALLEL 168VFBGA MOQ: 1000 MPQ: 1	IC DRAM 1G PARALLEL 168VFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	1Gb (32M x 32)	Volatile	SDRAM - Mobile LPDDR	DRAM	200MHz	5.0ns	15ns
	MT46H32M32LFJG-6 IT:A	Micron Technology Inc.	Enquête	-	-	IC DRAM 1G PARALLEL 168VFBGA MOQ: 1000 MPQ: 1	IC DRAM 1G PARALLEL 168VFBGA	Tray	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	1Gb (32M x 32)	Volatile	SDRAM - Mobile LPDDR	DRAM	166MHz	5.0ns	15ns
	MT46H32M32LFJG-6 IT:A TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 1G PARALLEL 168VFBGA MOQ: 1000 MPQ: 1	IC DRAM 1G PARALLEL 168VFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	1Gb (32M x 32)	Volatile	SDRAM - Mobile LPDDR	DRAM	166MHz	5.0ns	15ns
	MT46H32M32LFJG-6:A	Micron Technology Inc.	Enquête	-	-	IC DRAM 1G PARALLEL 168VFBGA MOQ: 1000 MPQ: 1	IC DRAM 1G PARALLEL 168VFBGA	Tray	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	1Gb (32M x 32)	Volatile	SDRAM - Mobile LPDDR	DRAM	166MHz	5.0ns	15ns
	MT46H32M32LFJG-6:A TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 1G PARALLEL 168VFBGA MOQ: 1000 MPQ: 1	IC DRAM 1G PARALLEL 168VFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	1Gb (32M x 32)	Volatile	SDRAM - Mobile LPDDR	DRAM	166MHz	5.0ns	15ns
	MT46H64M32L2JG-5 IT:A	Micron Technology Inc.	Enquête	-	-	IC DRAM 2G PARALLEL 168VFBGA MOQ: 1000 MPQ: 1	IC DRAM 2G PARALLEL 168VFBGA	Tray	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	2Gb (64M x 32)	Volatile	SDRAM - Mobile LPDDR	DRAM	200MHz	5.0ns	15ns
	MT46H64M32L2JG-5 IT:A TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 2G PARALLEL 168VFBGA MOQ: 1000 MPQ: 1	IC DRAM 2G PARALLEL 168VFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	2Gb (64M x 32)	Volatile	SDRAM - Mobile LPDDR	DRAM	200MHz	5.0ns	15ns
	MT46H64M32L2JG-5:A	Micron Technology Inc.	Enquête	-	-	IC DRAM 2G PARALLEL 168VFBGA MOQ: 1000 MPQ: 1	IC DRAM 2G PARALLEL 168VFBGA	Tray	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	2Gb (64M x 32)	Volatile	SDRAM - Mobile LPDDR	DRAM	200MHz	5.0ns	15ns
	MT46H64M32L2JG-5:A TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 2G PARALLEL 168VFBGA MOQ: 1000 MPQ: 1	IC DRAM 2G PARALLEL 168VFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	2Gb (64M x 32)	Volatile	SDRAM - Mobile LPDDR	DRAM	200MHz	5.0ns	15ns
	MT46H64M32L2JG-6 IT:A	Micron Technology Inc.	Enquête	-	-	IC DRAM 2G PARALLEL 168VFBGA MOQ: 1000 MPQ: 1	IC DRAM 2G PARALLEL 168VFBGA	Tray	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	2Gb (64M x 32)	Volatile	SDRAM - Mobile LPDDR	DRAM	166MHz	5.0ns	15ns
	MT46H64M32L2JG-6 IT:A TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 2G PARALLEL 168VFBGA MOQ: 1000 MPQ: 1	IC DRAM 2G PARALLEL 168VFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	2Gb (64M x 32)	Volatile	SDRAM - Mobile LPDDR	DRAM	166MHz	5.0ns	15ns

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