Mémoire - Zui Ai Technology（Taiwan）Company.

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Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Memory Size	Technology	Clock Frequency	Access Time	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Memory Size	Technology	Clock Frequency	Access Time	Write Cycle Time - Word, Page
	IS43LR32320B-6BL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 64M PARALLEL 90LFBGA MOQ: 2500 MPQ: 1	IC DRAM 64M PARALLEL 90LFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	64Mb (2M x 32)	SDRAM - Mobile LPDDR	166MHz	5.5ns	15ns
	IS43LR32320B-6BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 64M PARALLEL 90LFBGA MOQ: 2500 MPQ: 1	IC DRAM 64M PARALLEL 90LFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	64Mb (2M x 32)	SDRAM - Mobile LPDDR	166MHz	5.5ns	15ns
	IS43LR32320B-6BL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 64M PARALLEL 90LFBGA MOQ: 240 MPQ: 1	IC DRAM 64M PARALLEL 90LFBGA	Tray	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	64Mb (2M x 32)	SDRAM - Mobile LPDDR	166MHz	5.5ns	15ns
	IS43LR32320B-6BLI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 64M PARALLEL 90LFBGA MOQ: 240 MPQ: 1	IC DRAM 64M PARALLEL 90LFBGA	Tray	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	64Mb (2M x 32)	SDRAM - Mobile LPDDR	166MHz	5.5ns	15ns
	IS42S32800B-7BL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 90LFBGA MOQ: 240 MPQ: 1	IC DRAM 256M PARALLEL 90LFBGA	Tray	3 V ~ 3.6 V	0°C ~ 70°C (TA)	256Mb (8M x 32)	SDRAM	143MHz	5.5ns	-
	IS42S32800B-7B	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 90LFBGA MOQ: 240 MPQ: 1	IC DRAM 256M PARALLEL 90LFBGA	Tray	3 V ~ 3.6 V	0°C ~ 70°C (TA)	256Mb (8M x 32)	SDRAM	143MHz	5.5ns	-
	IS42S32800B-7B-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 90LFBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 90LFBGA	Tape & Reel (TR)	3 V ~ 3.6 V	0°C ~ 70°C (TA)	256Mb (8M x 32)	SDRAM	143MHz	5.5ns	-
	IS42S32800B-7BI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 90LFBGA MOQ: 240 MPQ: 1	IC DRAM 256M PARALLEL 90LFBGA	Tray	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	256Mb (8M x 32)	SDRAM	143MHz	5.5ns	-
	IS42S32800B-7BI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 90LFBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 90LFBGA	Tape & Reel (TR)	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	256Mb (8M x 32)	SDRAM	143MHz	5.5ns	-
	IS42S32800B-7BL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 90LFBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 90LFBGA	Tape & Reel (TR)	3 V ~ 3.6 V	0°C ~ 70°C (TA)	256Mb (8M x 32)	SDRAM	143MHz	5.5ns	-
	IS42S32800B-7BLI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 90LFBGA MOQ: 240 MPQ: 1	IC DRAM 256M PARALLEL 90LFBGA	Tray	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	256Mb (8M x 32)	SDRAM	143MHz	5.5ns	-
	IS42S32800B-7BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 90LFBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 90LFBGA	Tape & Reel (TR)	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	256Mb (8M x 32)	SDRAM	143MHz	5.5ns	-
	IS42S32160A-75BL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90LFBGA MOQ: 288 MPQ: 1	IC DRAM 512M PARALLEL 90LFBGA	Tray	3 V ~ 3.6 V	0°C ~ 70°C (TA)	512Mb (16M x 32)	SDRAM	133MHz	6ns	-
	IS42S32160A-75BLI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90LFBGA MOQ: 288 MPQ: 1	IC DRAM 512M PARALLEL 90LFBGA	Tray	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	512Mb (16M x 32)	SDRAM	133MHz	6ns	-
	IS42S32160A-75B	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90LFBGA MOQ: 144 MPQ: 1	IC DRAM 512M PARALLEL 90LFBGA	Tray	3 V ~ 3.6 V	0°C ~ 70°C (TA)	512Mb (16M x 32)	SDRAM	133MHz	6ns	-
	IS42S32160A-75BI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90LFBGA MOQ: 288 MPQ: 1	IC DRAM 512M PARALLEL 90LFBGA	Tray	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	512Mb (16M x 32)	SDRAM	133MHz	6ns	-
	IS42S32160A-75BL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90LFBGA MOQ: 2500 MPQ: 1	IC DRAM 512M PARALLEL 90LFBGA	Tape & Reel (TR)	3 V ~ 3.6 V	0°C ~ 70°C (TA)	512Mb (16M x 32)	SDRAM	133MHz	6ns	-
	IS42S32160A-75B-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90LFBGA MOQ: 2500 MPQ: 1	IC DRAM 512M PARALLEL 90LFBGA	Tape & Reel (TR)	3 V ~ 3.6 V	0°C ~ 70°C (TA)	512Mb (16M x 32)	SDRAM	133MHz	6ns	-
	IS42S32160A-75BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90LFBGA MOQ: 2500 MPQ: 1	IC DRAM 512M PARALLEL 90LFBGA	Tape & Reel (TR)	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	512Mb (16M x 32)	SDRAM	133MHz	6ns	-
	IS42S32160A-75BI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90LFBGA MOQ: 2500 MPQ: 1	IC DRAM 512M PARALLEL 90LFBGA	Tape & Reel (TR)	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	512Mb (16M x 32)	SDRAM	133MHz	6ns	-