Conditions sélectionnées:
Découvrez les produits 35
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Operating Temperature Memory Size Access Time Write Cycle Time - Word, Page
DS1270Y-70#
Maxim Integrated
19
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 16M PARALLEL 36EDIP
4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 16Mb (2M x 8) 70ns 70ns
DS1265AB-100+
Maxim Integrated
17
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 8M PARALLEL 36EDIP
4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 8Mb (1M x 8) 100ns 100ns
DS1265W-150+
Maxim Integrated
18
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 8M PARALLEL 36EDIP
3 V ~ 3.6 V 0°C ~ 70°C (TA) 8Mb (1M x 8) 150ns 150ns
DS1265AB-70IND+
Maxim Integrated
18
3 jours
-
MOQ: 1  MPQ: 1
IC NVSRAM 8M PARALLEL 36EDIP
4.75 V ~ 5.25 V -40°C ~ 85°C (TA) 8Mb (1M x 8) 70ns 70ns
DS1265Y-70+
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 8M PARALLEL 36EDIP
4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 8Mb (1M x 8) 70ns 70ns
DS1265W-100+
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 8M PARALLEL 36EDIP
3 V ~ 3.6 V 0°C ~ 70°C (TA) 8Mb (1M x 8) 100ns 100ns
DS1265Y-70IND+
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 8M PARALLEL 36EDIP
4.5 V ~ 5.5 V -40°C ~ 85°C (TA) 8Mb (1M x 8) 70ns 70ns
DS1265W-100IND+
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 8M PARALLEL 36EDIP
3 V ~ 3.6 V -40°C ~ 85°C (TA) 8Mb (1M x 8) 100ns 100ns
DS1270AB-70#
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 16M PARALLEL 36EDIP
4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 16Mb (2M x 8) 70ns 70ns
DS1270AB-100#
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 16M PARALLEL 36EDIP
4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 16Mb (2M x 8) 100ns 100ns
DS1270AB-70IND#
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 16M PARALLEL 36EDIP
4.75 V ~ 5.25 V -40°C ~ 85°C (TA) 16Mb (2M x 8) 70ns 70ns
DS1270W-100IND#
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 16M PARALLEL 36EDIP
3 V ~ 3.6 V -40°C ~ 85°C (TA) 16Mb (2M x 8) 100ns 100ns
DS1270W-100#
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 16M PARALLEL 36EDIP
3 V ~ 3.6 V 0°C ~ 70°C (TA) 16Mb (2M x 8) 100ns 100ns
DS1270Y-70IND#
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 16M PARALLEL 36EDIP
4.5 V ~ 5.5 V -40°C ~ 85°C (TA) 16Mb (2M x 8) 70ns 70ns
DS1265Y-100
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 8M PARALLEL 36EDIP
4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 8Mb (1M x 8) 100ns 100ns
DS1265AB-100
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 8M PARALLEL 36EDIP
4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 8Mb (1M x 8) 100ns 100ns
DS1265W-150
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 8M PARALLEL 36EDIP
3 V ~ 3.6 V 0°C ~ 70°C (TA) 8Mb (1M x 8) 150ns 150ns
DS1265W-100
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 8M PARALLEL 36EDIP
3 V ~ 3.6 V 0°C ~ 70°C (TA) 8Mb (1M x 8) 100ns 100ns
DS1265AB-70
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 8M PARALLEL 36EDIP
4.75 V ~ 5.25 V 0°C ~ 70°C (TA) 8Mb (1M x 8) 70ns 70ns
DS1265Y-70
Maxim Integrated
Enquête
-
-
MOQ: 9  MPQ: 1
IC NVSRAM 8M PARALLEL 36EDIP
4.5 V ~ 5.5 V 0°C ~ 70°C (TA) 8Mb (1M x 8) 70ns 70ns