Découvrez les produits 53
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Memory Size Clock Frequency Write Cycle Time - Word, Page
W97AH2KBVX2I
Winbond Electronics
215
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 134VFBGA
Tray 1.14 V ~ 1.95 V -40°C ~ 85°C (TA) 1Gb (32M x 32) 400MHz 15ns
W978H6KBVX2E
Winbond Electronics
4,611
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 134VFBGA
Tray 1.14 V ~ 1.95 V -25°C ~ 85°C (TC) 256Mb (16M x 16) 400MHz 15ns
W978H6KBVX2I
Winbond Electronics
171
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 256M PARALLEL 134VFBGA
Tray 1.14 V ~ 1.95 V -40°C ~ 85°C (TA) 256Mb (16M x 16) 400MHz 15ns
W979H6KBVX2I
Winbond Electronics
171
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 134VFBGA
Tray 1.14 V ~ 1.95 V -40°C ~ 85°C (TA) 512Mb (32M x 16) 400MHz 15ns
W979H2KBVX2I
Winbond Electronics
156
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 512M PARALLEL 134VFBGA
Tray 1.14 V ~ 1.95 V -40°C ~ 85°C (TA) 512Mb (16M x 32) 400MHz 15ns
W97AH6KBVX2I
Winbond Electronics
97
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 134VFBGA
Tray 1.14 V ~ 1.95 V -40°C ~ 85°C (TA) 1Gb (64M x 16) 400MHz 15ns
EDB1316BDBH-1DAAT-F-D
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 1G PARALLEL 134VFBGA
Tray 1.14 V ~ 1.95 V -40°C ~ 105°C (TC) 1Gb (64M x 16) 533MHz -
W979H6KBVX2E TR
Winbond Electronics
Enquête
-
-
MOQ: 3500  MPQ: 1
IC DRAM 512M PARALLEL 134VFBGA
Tape & Reel (TR) 1.14 V ~ 1.95 V -25°C ~ 85°C (TC) 512Mb (32M x 16) 400MHz 15ns
W979H6KBVX2I TR
Winbond Electronics
Enquête
-
-
MOQ: 3500  MPQ: 1
IC DRAM 512M PARALLEL 134VFBGA
Tape & Reel (TR) 1.14 V ~ 1.95 V -40°C ~ 85°C (TA) 512Mb (32M x 16) 400MHz 15ns
W978H2KBVX2E
Winbond Electronics
Enquête
-
-
MOQ: 168  MPQ: 1
IC DRAM 256M PARALLEL 134VFBGA
Tray 1.14 V ~ 1.95 V -25°C ~ 85°C (TC) 256Mb (8M x 32) 400MHz 15ns
W978H2KBVX2I
Winbond Electronics
Enquête
-
-
MOQ: 168  MPQ: 1
IC DRAM 256M PARALLEL 134VFBGA
Tray 1.14 V ~ 1.95 V -40°C ~ 85°C (TA) 256Mb (8M x 32) 400MHz 15ns
W97AH6KBVX2E TR
Winbond Electronics
Enquête
-
-
MOQ: 3500  MPQ: 1
IC DRAM 1G PARALLEL 134VFBGA
Tape & Reel (TR) 1.14 V ~ 1.95 V -25°C ~ 85°C (TC) 1Gb (64M x 16) 400MHz 15ns
W97AH6KBVX2I TR
Winbond Electronics
Enquête
-
-
MOQ: 3500  MPQ: 1
IC DRAM 1G PARALLEL 134VFBGA
Tape & Reel (TR) 1.14 V ~ 1.95 V -40°C ~ 85°C (TA) 1Gb (64M x 16) 400MHz 15ns
W979H2KBVX2E
Winbond Electronics
Enquête
-
-
MOQ: 168  MPQ: 1
IC DRAM 512M PARALLEL 134VFBGA
Tray 1.14 V ~ 1.95 V -25°C ~ 85°C (TC) 512Mb (16M x 32) 400MHz 15ns
W979H6KBVX2E
Winbond Electronics
Enquête
-
-
MOQ: 168  MPQ: 1
IC DRAM 512M PARALLEL 134VFBGA
Tray 1.14 V ~ 1.95 V -25°C ~ 85°C (TC) 512Mb (32M x 16) 400MHz 15ns
W97AH2KBVX2E
Winbond Electronics
Enquête
-
-
MOQ: 168  MPQ: 1
IC DRAM 1G PARALLEL 134VFBGA
Tray 1.14 V ~ 1.95 V -25°C ~ 85°C (TC) 1Gb (32M x 32) 400MHz 15ns
W97AH6KBVX2E
Winbond Electronics
Enquête
-
-
MOQ: 168  MPQ: 1
IC DRAM 1G PARALLEL 134VFBGA
Tray 1.14 V ~ 1.95 V -25°C ~ 85°C (TC) 1Gb (64M x 16) 400MHz 15ns
MT42L16M32D1AC-25 AAT:A TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 512M PARALLEL 134VFBGA
Tape & Reel (TR) 1.14 V ~ 1.95 V -40°C ~ 105°C (TC) 512Mb (16M x 32) 400MHz -
MT42L16M32D1AC-25 AAT:A
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 512M PARALLEL 134VFBGA
Tray 1.14 V ~ 1.95 V -40°C ~ 105°C (TC) 512Mb (16M x 32) 400MHz -
MT42L32M32D2AC-25 AIT:A
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 1G PARALLEL 134FBGA
Tray 1.14 V ~ 1.95 V -25°C ~ 85°C (TC) 1Gb (32M x 32) 400MHz -