- Packaging:
-
- Voltage - Supply:
-
- Operating Temperature:
-
- Memory Size:
-
- Clock Frequency:
-
- Conditions sélectionnées:
Découvrez les produits 53
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Memory Size | Clock Frequency | Write Cycle Time - Word, Page | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Memory Size | Clock Frequency | Write Cycle Time - Word, Page | ||
Winbond Electronics |
215
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 134VFBGA
|
Tray | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TA) | 1Gb (32M x 32) | 400MHz | 15ns | ||||
Winbond Electronics |
4,611
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 134VFBGA
|
Tray | 1.14 V ~ 1.95 V | -25°C ~ 85°C (TC) | 256Mb (16M x 16) | 400MHz | 15ns | ||||
Winbond Electronics |
171
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 134VFBGA
|
Tray | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TA) | 256Mb (16M x 16) | 400MHz | 15ns | ||||
Winbond Electronics |
171
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 134VFBGA
|
Tray | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TA) | 512Mb (32M x 16) | 400MHz | 15ns | ||||
Winbond Electronics |
156
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 134VFBGA
|
Tray | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TA) | 512Mb (16M x 32) | 400MHz | 15ns | ||||
Winbond Electronics |
97
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 134VFBGA
|
Tray | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TA) | 1Gb (64M x 16) | 400MHz | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 134VFBGA
|
Tray | 1.14 V ~ 1.95 V | -40°C ~ 105°C (TC) | 1Gb (64M x 16) | 533MHz | - | ||||
Winbond Electronics |
Enquête
|
- |
-
|
MOQ: 3500 MPQ: 1
|
IC DRAM 512M PARALLEL 134VFBGA
|
Tape & Reel (TR) | 1.14 V ~ 1.95 V | -25°C ~ 85°C (TC) | 512Mb (32M x 16) | 400MHz | 15ns | ||||
Winbond Electronics |
Enquête
|
- |
-
|
MOQ: 3500 MPQ: 1
|
IC DRAM 512M PARALLEL 134VFBGA
|
Tape & Reel (TR) | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TA) | 512Mb (32M x 16) | 400MHz | 15ns | ||||
Winbond Electronics |
Enquête
|
- |
-
|
MOQ: 168 MPQ: 1
|
IC DRAM 256M PARALLEL 134VFBGA
|
Tray | 1.14 V ~ 1.95 V | -25°C ~ 85°C (TC) | 256Mb (8M x 32) | 400MHz | 15ns | ||||
Winbond Electronics |
Enquête
|
- |
-
|
MOQ: 168 MPQ: 1
|
IC DRAM 256M PARALLEL 134VFBGA
|
Tray | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TA) | 256Mb (8M x 32) | 400MHz | 15ns | ||||
Winbond Electronics |
Enquête
|
- |
-
|
MOQ: 3500 MPQ: 1
|
IC DRAM 1G PARALLEL 134VFBGA
|
Tape & Reel (TR) | 1.14 V ~ 1.95 V | -25°C ~ 85°C (TC) | 1Gb (64M x 16) | 400MHz | 15ns | ||||
Winbond Electronics |
Enquête
|
- |
-
|
MOQ: 3500 MPQ: 1
|
IC DRAM 1G PARALLEL 134VFBGA
|
Tape & Reel (TR) | 1.14 V ~ 1.95 V | -40°C ~ 85°C (TA) | 1Gb (64M x 16) | 400MHz | 15ns | ||||
Winbond Electronics |
Enquête
|
- |
-
|
MOQ: 168 MPQ: 1
|
IC DRAM 512M PARALLEL 134VFBGA
|
Tray | 1.14 V ~ 1.95 V | -25°C ~ 85°C (TC) | 512Mb (16M x 32) | 400MHz | 15ns | ||||
Winbond Electronics |
Enquête
|
- |
-
|
MOQ: 168 MPQ: 1
|
IC DRAM 512M PARALLEL 134VFBGA
|
Tray | 1.14 V ~ 1.95 V | -25°C ~ 85°C (TC) | 512Mb (32M x 16) | 400MHz | 15ns | ||||
Winbond Electronics |
Enquête
|
- |
-
|
MOQ: 168 MPQ: 1
|
IC DRAM 1G PARALLEL 134VFBGA
|
Tray | 1.14 V ~ 1.95 V | -25°C ~ 85°C (TC) | 1Gb (32M x 32) | 400MHz | 15ns | ||||
Winbond Electronics |
Enquête
|
- |
-
|
MOQ: 168 MPQ: 1
|
IC DRAM 1G PARALLEL 134VFBGA
|
Tray | 1.14 V ~ 1.95 V | -25°C ~ 85°C (TC) | 1Gb (64M x 16) | 400MHz | 15ns | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 512M PARALLEL 134VFBGA
|
Tape & Reel (TR) | 1.14 V ~ 1.95 V | -40°C ~ 105°C (TC) | 512Mb (16M x 32) | 400MHz | - | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 512M PARALLEL 134VFBGA
|
Tray | 1.14 V ~ 1.95 V | -40°C ~ 105°C (TC) | 512Mb (16M x 32) | 400MHz | - | ||||
Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 1G PARALLEL 134FBGA
|
Tray | 1.14 V ~ 1.95 V | -25°C ~ 85°C (TC) | 1Gb (32M x 32) | 400MHz | - |