Mémoire - Zui Ai Technology（Taiwan）Company.

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		Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Voltage - Supply	Operating Temperature	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Memory Interface
		Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Voltage - Supply	Operating Temperature	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Memory Interface
			W632GG6MB-12	Winbond Electronics	241	3 jours	-	IC DRAM 2G PARALLEL 800MHZ MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 800MHZ	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	800MHz	20ns	Parallel
			W632GU6MB-12	Winbond Electronics	151	3 jours	-	IC DRAM 2G PARALLEL 96VFBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 96VFBGA	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	800MHz	20ns	Parallel
			W631GU6MB-12	Winbond Electronics	1	3 jours	-	IC SDRAM 1GBIT 800MHZ 96BGA MOQ: 1 MPQ: 1	IC SDRAM 1GBIT 800MHZ 96BGA	-	-	-	-	-	-	-	-	-
			W632GG6MB-11	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 933MHZ MOQ: 198 MPQ: 1	IC DRAM 2G PARALLEL 933MHZ	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	933MHz	20ns	Parallel
			W632GG6MB-15	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 667MHZ MOQ: 198 MPQ: 1	IC DRAM 2G PARALLEL 667MHZ	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	667MHz	20ns	Parallel
			W632GU6MB-11	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 933MHZ MOQ: 198 MPQ: 1	IC DRAM 2G PARALLEL 933MHZ	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	933MHz	20ns	Parallel
			W632GU6MB-15	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 667MHZ MOQ: 198 MPQ: 1	IC DRAM 2G PARALLEL 667MHZ	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	667MHz	20ns	Parallel
			W632GG6MB-09	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 1066MHZ MOQ: 198 MPQ: 1	IC DRAM 2G PARALLEL 1066MHZ	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	1066MHz	20ns	Parallel
			W632GG6MB11I	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 933MHZ MOQ: 198 MPQ: 1	IC DRAM 2G PARALLEL 933MHZ	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	933MHz	20ns	Parallel
			W632GG6MB12I	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 800MHZ MOQ: 198 MPQ: 1	IC DRAM 2G PARALLEL 800MHZ	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	800MHz	20ns	Parallel
			W632GG6MB15I	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 667MHZ MOQ: 198 MPQ: 1	IC DRAM 2G PARALLEL 667MHZ	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	667MHz	20ns	Parallel
			W632GU6MB11I	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 933MHZ MOQ: 198 MPQ: 1	IC DRAM 2G PARALLEL 933MHZ	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	933MHz	20ns	Parallel
			W632GU6MB12I	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 800MHZ MOQ: 198 MPQ: 1	IC DRAM 2G PARALLEL 800MHZ	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	800MHz	20ns	Parallel
			W632GU6MB15I	Winbond Electronics	Enquête	-	-	IC DRAM 2G PARALLEL 667MHZ MOQ: 198 MPQ: 1	IC DRAM 2G PARALLEL 667MHZ	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	2Gb (128M x 16)	Volatile	SDRAM - DDR3	DRAM	667MHz	20ns	Parallel

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