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- Voltage - Supply：
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- Operating Temperature：
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- Conditions sélectionnées:
Découvrez les produits 290
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Memory Size | Technology | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Package / Case | Memory Size | Technology | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
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|
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Winbond Electronics |
2,500
|
3 jours |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
Tape & Reel (TR) | - | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TC) | 90-TFBGA | 512Mb (16M x 32) | SDRAM - Mobile LPDDR | 200MHz | 5ns | 15ns | ||
|
|
|
Winbond Electronics |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
Cut Tape (CT) | - | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TC) | 90-TFBGA | 512Mb (16M x 32) | SDRAM - Mobile LPDDR | 200MHz | 5ns | 15ns | ||
|
|
|
Winbond Electronics |
2,500
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
- | - | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TC) | 90-TFBGA | 512Mb (16M x 32) | SDRAM - Mobile LPDDR | 200MHz | 5ns | 15ns | ||
|
|
|
Winbond Electronics |
2,215
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
Tray | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-TFBGA | 512Mb (16M x 32) | SDRAM - Mobile LPDDR | 200MHz | 5ns | 15ns | ||
|
|
|
Winbond Electronics |
164
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 90VFBGA
|
Tray | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-TFBGA | 256Mb (8M x 32) | SDRAM - Mobile LPDDR | 200MHz | 5ns | 15ns | ||
|
|
|
Winbond Electronics |
151
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 90VFBGA
|
Tray | - | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TC) | 90-TFBGA | 256Mb (8M x 32) | SDRAM - Mobile LPDDR | 200MHz | 5ns | 15ns | ||
|
|
|
Micron Technology Inc. |
3,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
Tape & Reel (TR) | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-VFBGA | 512Mb (16M x 32) | SDRAM - Mobile LPDDR | 200MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
3,890
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
Cut Tape (CT) | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-VFBGA | 512Mb (16M x 32) | SDRAM - Mobile LPDDR | 200MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
3,890
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
- | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-VFBGA | 512Mb (16M x 32) | SDRAM - Mobile LPDDR | 200MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
Tape & Reel (TR) | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-VFBGA | 512Mb (16M x 32) | SDRAM - Mobile LPDDR | 166MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
Cut Tape (CT) | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-VFBGA | 512Mb (16M x 32) | SDRAM - Mobile LPDDR | 166MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
- | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-VFBGA | 512Mb (16M x 32) | SDRAM - Mobile LPDDR | 166MHz | 5.0ns | 15ns | ||
|
|
|
Winbond Electronics |
316
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 90VFBGA
|
Tray | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TC) | 90-TFBGA | 1Gb (32M x 32) | SDRAM - Mobile LPDDR | 200MHz | 5ns | 15ns | ||
|
|
|
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
Tape & Reel (TR) | - | 1.7 V ~ 1.95 V | -40°C ~ 105°C (TA) | 90-VFBGA | 512Mb (16M x 32) | SDRAM - Mobile LPDDR | 166MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
Cut Tape (CT) | - | 1.7 V ~ 1.95 V | -40°C ~ 105°C (TA) | 90-VFBGA | 512Mb (16M x 32) | SDRAM - Mobile LPDDR | 166MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
2,000
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 90VFBGA
|
- | - | 1.7 V ~ 1.95 V | -40°C ~ 105°C (TA) | 90-VFBGA | 512Mb (16M x 32) | SDRAM - Mobile LPDDR | 166MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 1G PARALLEL 90VFBGA
|
Tape & Reel (TR) | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-VFBGA | 1Gb (32M x 32) | SDRAM - Mobile LPDDR | 200MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
1,762
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 90VFBGA
|
Cut Tape (CT) | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-VFBGA | 1Gb (32M x 32) | SDRAM - Mobile LPDDR | 200MHz | 5.0ns | 15ns | ||
|
|
|
Micron Technology Inc. |
1,762
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 90VFBGA
|
- | - | 1.7 V ~ 1.95 V | -40°C ~ 85°C (TA) | 90-VFBGA | 1Gb (32M x 32) | SDRAM - Mobile LPDDR | 200MHz | 5.0ns | 15ns | ||
|
|
|
Winbond Electronics |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 256M PARALLEL 90VFBGA
|
Tape & Reel (TR) | - | 1.7 V ~ 1.95 V | -25°C ~ 85°C (TC) | 90-TFBGA | 256Mb (8M x 32) | SDRAM - Mobile LPDDR | 200MHz | 5ns | 15ns |
