Mémoire - Zui Ai Technology（Taiwan）Company.

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Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Memory Size	Technology	Clock Frequency	Access Time	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Memory Size	Technology	Clock Frequency	Access Time	Write Cycle Time - Word, Page
	IS43LR32640A-5BLI	ISSI，Integrated Silicon Solution Inc	128	3 jours	-	IC DRAM 2G PARALLEL 90WBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 90WBGA	Tray	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	2Gb (64M x 32)	SDRAM - DDR	200MHz	5ns	15ns
	IS43LR32640A-6BL	ISSI，Integrated Silicon Solution Inc	50	3 jours	-	IC DRAM 2G PARALLEL 90WBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 90WBGA	Tray	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	2Gb (64M x 32)	SDRAM - DDR	166MHz	5ns	15ns
	IS43LR32640A-6BLI	ISSI，Integrated Silicon Solution Inc	25	3 jours	-	IC DRAM 2G PARALLEL 90WBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 90WBGA	Tray	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	2Gb (64M x 32)	SDRAM - DDR	166MHz	5ns	15ns
	IS43LR32640A-6BL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 2G PARALLEL 90WBGA MOQ: 2500 MPQ: 1	IC DRAM 2G PARALLEL 90WBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	2Gb (64M x 32)	SDRAM - DDR	166MHz	5ns	15ns
	IS43LR32640A-5BL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 2G PARALLEL 90WBGA MOQ: 2500 MPQ: 1	IC DRAM 2G PARALLEL 90WBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	2Gb (64M x 32)	SDRAM - DDR	200MHz	5ns	15ns
	IS43LR32640A-6BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 2G PARALLEL 90WBGA MOQ: 2500 MPQ: 1	IC DRAM 2G PARALLEL 90WBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	2Gb (64M x 32)	SDRAM - DDR	166MHz	5ns	15ns
	IS43LR32640A-5BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 2G PARALLEL 90WBGA MOQ: 2500 MPQ: 1	IC DRAM 2G PARALLEL 90WBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	2Gb (64M x 32)	SDRAM - DDR	200MHz	5ns	15ns
	IS43LR32640A-5BL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 2G PARALLEL 90WBGA MOQ: 240 MPQ: 1	IC DRAM 2G PARALLEL 90WBGA	Tray	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	2Gb (64M x 32)	SDRAM - DDR	200MHz	5ns	15ns
	IS42S32160C-6BL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90WBGA MOQ: 240 MPQ: 1	IC DRAM 512M PARALLEL 90WBGA	Tray	3 V ~ 3.6 V	0°C ~ 70°C (TA)	512Mb (16M x 32)	SDRAM	166MHz	5.4ns	-
	IS42S32160C-6BL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90WBGA MOQ: 2500 MPQ: 1	IC DRAM 512M PARALLEL 90WBGA	Tape & Reel (TR)	3 V ~ 3.6 V	0°C ~ 70°C (TA)	512Mb (16M x 32)	SDRAM	166MHz	5.4ns	-
	IS42S32160C-6BLI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90WBGA MOQ: 240 MPQ: 1	IC DRAM 512M PARALLEL 90WBGA	Tray	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	512Mb (16M x 32)	SDRAM	166MHz	5.4ns	-
	IS42S32160C-6BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90WBGA MOQ: 2500 MPQ: 1	IC DRAM 512M PARALLEL 90WBGA	Tape & Reel (TR)	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	512Mb (16M x 32)	SDRAM	166MHz	5.4ns	-
	IS42S32160C-75BL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90WBGA MOQ: 240 MPQ: 1	IC DRAM 512M PARALLEL 90WBGA	Tray	3 V ~ 3.6 V	0°C ~ 70°C (TA)	512Mb (16M x 32)	SDRAM	133MHz	6ns	-
	IS42S32160C-75BL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90WBGA MOQ: 2500 MPQ: 1	IC DRAM 512M PARALLEL 90WBGA	Tape & Reel (TR)	3 V ~ 3.6 V	0°C ~ 70°C (TA)	512Mb (16M x 32)	SDRAM	133MHz	6ns	-
	IS42S32160C-75BLI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90WBGA MOQ: 240 MPQ: 1	IC DRAM 512M PARALLEL 90WBGA	Tray	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	512Mb (16M x 32)	SDRAM	133MHz	6ns	-
	IS42S32160C-75BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90WBGA MOQ: 2500 MPQ: 1	IC DRAM 512M PARALLEL 90WBGA	Tape & Reel (TR)	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	512Mb (16M x 32)	SDRAM	133MHz	6ns	-
	IS42S32160C-6BI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90WBGA MOQ: 240 MPQ: 1	IC DRAM 512M PARALLEL 90WBGA	Tray	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	512Mb (16M x 32)	SDRAM	166MHz	5.4ns	-
	IS42RM32160C-75BL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90WBGA MOQ: 0 MPQ: 1	IC DRAM 512M PARALLEL 90WBGA	Tray	2.3 V ~ 3 V	0°C ~ 70°C (TA)	512Mb (16M x 32)	SDRAM - Mobile	133MHz	5.4ns	-
	IS42RM32160C-75BLI	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90WBGA MOQ: 0 MPQ: 1	IC DRAM 512M PARALLEL 90WBGA	Tray	2.3 V ~ 3 V	-40°C ~ 85°C (TA)	512Mb (16M x 32)	SDRAM - Mobile	133MHz	5.4ns	-
	IS42RM32160C-75BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 512M PARALLEL 90WBGA MOQ: 0 MPQ: 1	IC DRAM 512M PARALLEL 90WBGA	Tape & Reel (TR)	2.3 V ~ 3 V	-40°C ~ 85°C (TA)	512Mb (16M x 32)	SDRAM - Mobile	133MHz	5.4ns	-