- Packaging：
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- Voltage - Supply：
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- Operating Temperature：
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- Technology：
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- Conditions sélectionnées:
Découvrez les produits 9
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Voltage - Supply | Operating Temperature | Package / Case | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
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Winbond Electronics |
618
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3 jours |
-
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MOQ: 1 MPQ: 1
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IC FLASH 2G PARALLEL 63FBGA
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Tray | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 63-VFBGA | 2Gb (256M x 8) | Non-Volatile | FLASH - NAND (SLC) | Flash | - | 25ns | 25ns | ||
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Micron Technology Inc. |
Enquête
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- |
-
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MOQ: 2000 MPQ: 1
|
IC DRAM 2G PARALLEL 63FBGA
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Tape & Reel (TR) | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 63-FBGA | 2Gb (512M x 4) | Volatile | SDRAM - DDR2 | DRAM | 333MHz | 450ps | 15ns | ||
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Micron Technology Inc. |
Enquête
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- |
-
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MOQ: 1000 MPQ: 1
|
IC DRAM 2G PARALLEL 63FBGA
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Tape & Reel (TR) | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 63-FBGA | 2Gb (512M x 4) | Volatile | SDRAM - DDR2 | DRAM | 267MHz | 500ps | 15ns | ||
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Micron Technology Inc. |
Enquête
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- |
-
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MOQ: 1320 MPQ: 1
|
IC DRAM 4G PARALLEL 63FBGA
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Tray | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 63-TFBGA | 4Gb (512M x 8) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ps | 15ns | ||
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|
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Micron Technology Inc. |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC DRAM 4G PARALLEL 63FBGA
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Tray | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 63-TFBGA | 4Gb (512M x 8) | Volatile | SDRAM - DDR2 | DRAM | 333MHz | 450ps | 15ns | ||
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Micron Technology Inc. |
Enquête
|
- |
-
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MOQ: 1000 MPQ: 1
|
IC DRAM 2G PARALLEL 63FBGA
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Tray | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 63-FBGA | 2Gb (512M x 4) | Volatile | SDRAM - DDR2 | DRAM | 333MHz | 450ps | 15ns | ||
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|
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Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 4G PARALLEL 63FBGA
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Tape & Reel (TR) | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 63-FBGA | 4Gb (1G x 4) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ps | 15ns | ||
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|
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Micron Technology Inc. |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC DRAM 4G PARALLEL 63FBGA
|
Tape & Reel (TR) | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 63-TFBGA | 4Gb (512M x 8) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ps | 15ns | ||
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|
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Micron Technology Inc. |
Enquête
|
- |
-
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MOQ: 1320 MPQ: 1
|
IC DRAM 4G PARALLEL 63FBGA
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Bulk | 1.7 V ~ 1.9 V | 0°C ~ 85°C (TC) | 63-FBGA | 4Gb (1G x 4) | Volatile | SDRAM - DDR2 | DRAM | 400MHz | 400ps | 15ns |
