Découvrez les produits 24
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Package / Case Memory Size Clock Frequency Access Time
MT47H256M8EB-25E:C
Micron Technology Inc.
559
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 60FBGA
Tray 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 60-TFBGA 2Gb (256M x 8) 400MHz 400ps
MT47H256M8EB-25E IT:C
Micron Technology Inc.
642
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 60FBGA
Tray 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 60-TFBGA 2Gb (256M x 8) 400MHz 400ps
MT47H256M8EB-25E IT:C TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 60FBGA
Tape & Reel (TR) 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 60-TFBGA 2Gb (256M x 8) 400MHz 400ps
MT47H256M8EB-25E IT:C TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 60FBGA
Cut Tape (CT) 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 60-TFBGA 2Gb (256M x 8) 400MHz 400ps
MT47H256M8EB-25E IT:C TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 60FBGA
- 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 60-TFBGA 2Gb (256M x 8) 400MHz 400ps
MT47H256M8EB-25E:C TR
Micron Technology Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 2G PARALLEL 60FBGA
Tape & Reel (TR) 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 60-TFBGA 2Gb (256M x 8) 400MHz 400ps
MT47H256M8EB-25E:C TR
Micron Technology Inc.
1,991
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 60FBGA
Cut Tape (CT) 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 60-TFBGA 2Gb (256M x 8) 400MHz 400ps
MT47H256M8EB-25E:C TR
Micron Technology Inc.
1,991
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 60FBGA
- 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 60-TFBGA 2Gb (256M x 8) 400MHz 400ps
MT47H256M8EB-25E AIT:C TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 60FBGA
Tape & Reel (TR) 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 60-TFBGA 2Gb (256M x 8) 400MHz 400ps
MT47H256M8EB-25E AIT:C TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 60FBGA
Cut Tape (CT) 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 60-TFBGA 2Gb (256M x 8) 400MHz 400ps
MT47H256M8EB-25E AIT:C TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 2G PARALLEL 60FBGA
- 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 60-TFBGA 2Gb (256M x 8) 400MHz 400ps
MT47H512M4EB-25E:C
Micron Technology Inc.
Enquête
-
-
MOQ: 1320  MPQ: 1
IC DRAM 2G PARALLEL 60FBGA
Tray 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 60-TFBGA 2Gb (512M x 4) 400MHz 400ps
MT47H256M8EB-187E:C
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 60FBGA
Tray 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 60-TFBGA 2Gb (256M x 8) 533MHz 350ps
MT47H512M4EB-187E:C
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 60FBGA
Tray 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 60-TFBGA 2Gb (512M x 4) 533MHz 350ps
MT47H512M4EB-3:C
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 60FBGA
Tray 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 60-TFBGA 2Gb (512M x 4) 333MHz 450ps
MT47R256M8EB-25E:C
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 60FBGA
Tray 1.55 V ~ 1.9 V 0°C ~ 85°C (TC) 60-FBGA 2Gb (256M x 8) 400MHz 400ps
MT47R512M4EB-25E:C
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 60FBGA
Tray 1.55 V ~ 1.9 V 0°C ~ 85°C (TC) 60-TFBGA 2Gb (512M x 4) 400MHz 400ps
MT47H256M8EB-25E AIT:C
Micron Technology Inc.
Enquête
-
-
MOQ: 1320  MPQ: 1
IC DRAM 2G PARALLEL 60FBGA
Tray 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 60-TFBGA 2Gb (256M x 8) 400MHz 400ps
MT47H256M8EB-25E XIT:C
Micron Technology Inc.
Enquête
-
-
MOQ: 1320  MPQ: 1
IC DRAM 2G PARALLEL 60FBGA
Tray 1.7 V ~ 1.9 V -40°C ~ 95°C (TC) 60-TFBGA 2Gb (256M x 8) 400MHz 400ps
MT47H256M8EB-187E:C TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC DRAM 2G PARALLEL 60FBGA
Tape & Reel (TR) 1.7 V ~ 1.9 V 0°C ~ 85°C (TC) 60-TFBGA 2Gb (256M x 8) 533MHz 350ps