- Packaging:
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- Operating Temperature:
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- Clock Frequency:
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- Access Time:
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- Conditions sélectionnées:
Découvrez les produits 133
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Memory Size | Clock Frequency | Access Time | ||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Memory Size | Clock Frequency | Access Time | ||
ISSI,Integrated Silicon Solution Inc |
1,149
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 84TWBGA
|
Tray | 0°C ~ 85°C (TC) | 1Gb (64M x 16) | 400MHz | 400ns | ||||
ISSI,Integrated Silicon Solution Inc |
1,340
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 84TWBGA
|
Tray | -40°C ~ 85°C (TA) | 1Gb (64M x 16) | 333MHz | 450ns | ||||
ISSI,Integrated Silicon Solution Inc |
172
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 2G PARALLEL 84TWBGA
|
Tray | -40°C ~ 85°C (TA) | 2Gb (128M x 16) | 400MHz | 400ns | ||||
ISSI,Integrated Silicon Solution Inc |
248
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 84TWBGA
|
Tray | 0°C ~ 70°C (TA) | 256Mb (16M x 16) | 266MHz | 500ps | ||||
ISSI,Integrated Silicon Solution Inc |
472
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 84TWBGA
|
Tray | 0°C ~ 70°C (TA) | 512Mb (32M x 16) | 333MHz | 450ps | ||||
ISSI,Integrated Silicon Solution Inc |
221
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 84TWBGA
|
Tray | 0°C ~ 85°C (TC) | 512Mb (32M x 16) | 333MHz | 450ns | ||||
ISSI,Integrated Silicon Solution Inc |
135
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 84TWBGA
|
Tray | 0°C ~ 85°C (TC) | 512Mb (32M x 16) | 400MHz | 400ns | ||||
ISSI,Integrated Silicon Solution Inc |
110
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 84TWBGA
|
Tray | 0°C ~ 85°C (TC) | 1Gb (64M x 16) | 333MHz | 450ns | ||||
ISSI,Integrated Silicon Solution Inc |
234
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 84TWBGA
|
Tray | -40°C ~ 85°C (TA) | 512Mb (32M x 16) | 400MHz | 400ns | ||||
ISSI,Integrated Silicon Solution Inc |
149
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 84TWBGA
|
Tray | -40°C ~ 85°C (TA) | 1Gb (64M x 16) | 400MHz | 400ns | ||||
ISSI,Integrated Silicon Solution Inc |
198
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 2G PARALLEL 84TWBGA
|
Tray | 0°C ~ 85°C (TC) | 2Gb (128M x 16) | 333MHz | 450ps | ||||
ISSI,Integrated Silicon Solution Inc |
32
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 2G PARALLEL 84TWBGA
|
Tray | 0°C ~ 85°C (TC) | 2Gb (128M x 16) | 400MHz | 400ns | ||||
ISSI,Integrated Silicon Solution Inc |
7
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 84TWBGA
|
Tray | 0°C ~ 70°C (TA) | 1Gb (64M x 16) | 333MHz | 450ps | ||||
ISSI,Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 1G PARALLEL 84TWBGA
|
Tray | -40°C ~ 85°C (TA) | 1Gb (64M x 16) | 333MHz | 450ps | ||||
ISSI,Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 256M PARALLEL 84TWBGA
|
Tray | -40°C ~ 85°C (TA) | 256Mb (16M x 16) | 266MHz | 500ps | ||||
ISSI,Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 512M PARALLEL 84TWBGA
|
Tray | -40°C ~ 85°C (TA) | 512Mb (32M x 16) | 333MHz | 450ns | ||||
ISSI,Integrated Silicon Solution Inc |
23
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC DRAM 2G PARALLEL 84TWBGA
|
Tray | -40°C ~ 85°C (TA) | 2Gb (128M x 16) | 333MHz | 450ps | ||||
ISSI,Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 256M PARALLEL 84TWBGA
|
Tape & Reel (TR) | 0°C ~ 70°C (TA) | 256Mb (16M x 16) | 400MHz | 400ps | ||||
ISSI,Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 256M PARALLEL 84TWBGA
|
Tape & Reel (TR) | 0°C ~ 70°C (TA) | 256Mb (16M x 16) | 333MHz | 450ps | ||||
ISSI,Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 627 MPQ: 1
|
IC DRAM 256M PARALLEL 84TWBGA
|
Tray | 0°C ~ 70°C (TA) | 256Mb (16M x 16) | 400MHz | 400ps |