Clock Frequency:
Access Time:
Write Cycle Time - Word, Page:
Découvrez les produits 16
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Technology Clock Frequency Access Time Write Cycle Time - Word, Page
IS42VM32100D-75BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 32M PARALLEL 133MHZ
Tape & Reel (TR) 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) SDRAM - Mobile 133MHz 6ns -
IS42RM32100D-75BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 32M PARALLEL 133MHZ
Tape & Reel (TR) 2.3 V ~ 2.7 V -40°C ~ 85°C (TA) SDRAM - Mobile 133MHz 6ns -
IS42VM32100D-6BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 32M PARALLEL 166MHZ
Tape & Reel (TR) 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) SDRAM - Mobile 166MHz 5.5ns -
IS42RM32100D-6BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 32M PARALLEL 166MHZ
Tape & Reel (TR) 2.3 V ~ 2.7 V -40°C ~ 85°C (TA) SDRAM - Mobile 166MHz 5.5ns -
IS42VM32100D-75BLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 348  MPQ: 1
IC DRAM 32M PARALLEL 133MHZ
Tray 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) SDRAM - Mobile 133MHz 6ns -
IS42RM32100D-75BLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 348  MPQ: 1
IC DRAM 32M PARALLEL 133MHZ
Tray 2.3 V ~ 2.7 V -40°C ~ 85°C (TA) SDRAM - Mobile 133MHz 6ns -
IS42VM32100D-6BLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 348  MPQ: 1
IC DRAM 32M PARALLEL 166MHZ
Tray 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) SDRAM - Mobile 166MHz 5.5ns -
IS42RM32100D-6BLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 348  MPQ: 1
IC DRAM 32M PARALLEL 166MHZ
- 2.3 V ~ 2.7 V -40°C ~ 85°C (TA) SDRAM - Mobile 166MHz 5.5ns -
IS43LR32100D-6BL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 32M PARALLEL 90TFBGA
Tape & Reel (TR) 1.7 V ~ 1.95 V 0°C ~ 70°C (TA) SDRAM - Mobile LPDDR 166MHz 5.5ns 15ns
IS43LR32100D-6BL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 480  MPQ: 1
IC DRAM 32M PARALLEL 90TFBGA
Tray 1.7 V ~ 1.95 V 0°C ~ 70°C (TA) SDRAM - Mobile LPDDR 166MHz 5.5ns 15ns
IS43LR32100D-6BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 32M PARALLEL 90TFBGA
Tape & Reel (TR) 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) SDRAM - Mobile LPDDR 166MHz 5.5ns 15ns
IS43LR32100D-6BLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 480  MPQ: 1
IC DRAM 32M PARALLEL 90TFBGA
Tray 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) SDRAM - Mobile LPDDR 166MHz 5.5ns 15ns
IS43LR32100C-6BL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 240  MPQ: 1
IC DRAM 32M PARALLEL 90TFBGA
Tray 1.7 V ~ 1.95 V 0°C ~ 70°C (TA) SDRAM - Mobile LPDDR 166MHz 5.5ns 12ns
IS43LR32100C-6BLI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 240  MPQ: 1
IC DRAM 32M PARALLEL 90TFBGA
Tray 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) SDRAM - Mobile LPDDR 166MHz 5.5ns 12ns
IS43LR32100C-6BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 32M PARALLEL 90TFBGA
Tape & Reel (TR) 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) SDRAM - Mobile LPDDR 166MHz 5.5ns 12ns
IS43LR32100C-6BL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 32M PARALLEL 90TFBGA
Tape & Reel (TR) 1.7 V ~ 1.95 V 0°C ~ 70°C (TA) SDRAM - Mobile LPDDR 166MHz 5.5ns 12ns