Mémoire - Zui Ai Technology（Taiwan）Company.

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Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Technology	Clock Frequency	Access Time	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Technology	Clock Frequency	Access Time	Write Cycle Time - Word, Page
	IS42S32800J-7BL	ISSI，Integrated Silicon Solution Inc	782	3 jours	-	IC DRAM 256M PARALLEL 90TFBGA MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 90TFBGA	Tray	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SDRAM	143MHz	5.4ns	-
	IS42S32800J-6BLI	ISSI，Integrated Silicon Solution Inc	1,262	3 jours	-	IC DRAM 256M PARALLEL 90TFBGA MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 90TFBGA	Tray	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SDRAM	166MHz	5.4ns	-
	IS42S32800J-7BLI	ISSI，Integrated Silicon Solution Inc	273	3 jours	-	IC DRAM 256M PARALLEL 90TFBGA MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 90TFBGA	Tray	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SDRAM	143MHz	5.4ns	-
	AS4C8M32SA-6BIN	Alliance Memory，Inc.	88	3 jours	-	IC DRAM 256M PARALLEL 90TFBGA MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 90TFBGA	Tray	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SDRAM	166MHz	5ns	2ns
	W9825G2JB-6 TR	Winbond Electronics	Enquête	-	-	IC DRAM 256M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 90TFBGA	Tape & Reel (TR)	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SDRAM	166MHz	5ns	-
	W9825G2JB-75 TR	Winbond Electronics	Enquête	-	-	IC DRAM 256M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 90TFBGA	Tape & Reel (TR)	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	SDRAM	133MHz	5.4ns	-
	AS4C8M32SA-7BCNTR	Alliance Memory，Inc.	Enquête	-	-	IC DRAM 256M PARALLEL 90TFBGA MOQ: 2000 MPQ: 1	IC DRAM 256M PARALLEL 90TFBGA	Tape & Reel (TR)	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SDRAM	143MHz	5.4ns	2ns
	IS42VM32800K-75BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 90TFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	SDRAM - Mobile	133MHz	6ns	-
	IS43LR32800G-6BL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 90TFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	0°C ~ 70°C (TA)	SDRAM - Mobile LPDDR	166MHz	5.5ns	15ns
	IS42S32800J-7BL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 90TFBGA	Tape & Reel (TR)	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SDRAM	143MHz	5.4ns	-
	IS42RM32800K-75BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 90TFBGA	Tape & Reel (TR)	2.3 V ~ 3 V	-40°C ~ 85°C (TA)	SDRAM - Mobile	133MHz	6ns	-
	IS42SM32800K-75BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 90TFBGA	Tape & Reel (TR)	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	SDRAM - Mobile	133MHz	6ns	-
	IS42S32800J-6BL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 90TFBGA	Tape & Reel (TR)	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SDRAM	166MHz	5.4ns	-
	AS4C8M32SA-6BINTR	Alliance Memory，Inc.	Enquête	-	-	IC DRAM 256M PARALLEL 90TFBGA MOQ: 2000 MPQ: 1	IC DRAM 256M PARALLEL 90TFBGA	Tape & Reel (TR)	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	SDRAM	166MHz	5ns	2ns
	IS42VM32800K-6BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 90TFBGA	Tape & Reel (TR)	1.7 V ~ 1.95 V	-40°C ~ 85°C (TA)	SDRAM - Mobile	166MHz	5.5ns	-
	W9825G2JB-6	Winbond Electronics	Enquête	-	-	IC DRAM 256M PARALLEL 90TFBGA MOQ: 240 MPQ: 1	IC DRAM 256M PARALLEL 90TFBGA	Tray	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SDRAM	166MHz	5ns	-
	W9825G2JB-75	Winbond Electronics	Enquête	-	-	IC DRAM 256M PARALLEL 90TFBGA MOQ: 240 MPQ: 1	IC DRAM 256M PARALLEL 90TFBGA	Tray	2.7 V ~ 3.6 V	0°C ~ 70°C (TA)	SDRAM	133MHz	5.4ns	-
	IS42S32800J-75EBL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 90TFBGA	Tape & Reel (TR)	3 V ~ 3.6 V	0°C ~ 70°C (TA)	SDRAM	133MHz	6ns	-
	IS42RM32800K-6BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 90TFBGA	Tape & Reel (TR)	2.3 V ~ 3 V	-40°C ~ 85°C (TA)	SDRAM - Mobile	166MHz	5.5ns	-
	IS42SM32800K-6BLI-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 256M PARALLEL 90TFBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 90TFBGA	Tape & Reel (TR)	2.7 V ~ 3.6 V	-40°C ~ 85°C (TA)	SDRAM - Mobile	166MHz	5.5ns	-