Découvrez les produits 112
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Operating Temperature Technology Clock Frequency Access Time Write Cycle Time - Word, Page
AS4C4M32S-7BCN
Alliance Memory,Inc.
1,447
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 128M PARALLEL 90TFBGA
Tray 3 V ~ 3.6 V 0°C ~ 70°C (TA) SDRAM 143MHz 5.4ns 2ns
AS4C4M32S-6BIN
Alliance Memory,Inc.
270
3 jours
-
MOQ: 1  MPQ: 1
IC DRAM 128M PARALLEL 90TFBGA
Tray 3 V ~ 3.6 V -40°C ~ 85°C (TA) SDRAM 166MHz 5.4ns 2ns
AS4C4M32S-7BCNTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 128M PARALLEL 90TFBGA
Tape & Reel (TR) 3 V ~ 3.6 V 0°C ~ 70°C (TA) SDRAM 143MHz 5.4ns 2ns
IS42S32400F-7BL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 90TFBGA
Tape & Reel (TR) 3 V ~ 3.6 V 0°C ~ 70°C (TA) SDRAM 143MHz 5.4ns -
AS4C4M32S-6BINTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 2000  MPQ: 1
IC DRAM 128M PARALLEL 90TFBGA
Tape & Reel (TR) 3 V ~ 3.6 V -40°C ~ 85°C (TA) SDRAM 166MHz 5.4ns 2ns
IS42S32400F-6BL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 90TFBGA
Tape & Reel (TR) 3 V ~ 3.6 V 0°C ~ 70°C (TA) SDRAM 166MHz 5.4ns -
W9812G2KB-6 TR
Winbond Electronics
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 90TFBGA
Tape & Reel (TR) 3 V ~ 3.6 V 0°C ~ 70°C (TA) SDRAM 166MHz 5ns -
IS42S32400F-7BL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 240  MPQ: 1
IC DRAM 128M PARALLEL 90TFBGA
Tray 3 V ~ 3.6 V 0°C ~ 70°C (TA) SDRAM 143MHz 5.4ns -
IS43LR32400G-6BL-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 90TFBGA
Tape & Reel (TR) 1.7 V ~ 1.95 V 0°C ~ 70°C (TA) SDRAM - Mobile LPDDR 166MHz 5.5ns 15ns
IS42S32400F-6BL
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 240  MPQ: 1
IC DRAM 128M PARALLEL 90TFBGA
Tray 3 V ~ 3.6 V 0°C ~ 70°C (TA) SDRAM 166MHz 5.4ns -
IS42VM32400H-75BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 90TFBGA
Tape & Reel (TR) 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) SDRAM - Mobile 133MHz 6ns -
IS42SM32400H-75BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 90TFBGA
Tape & Reel (TR) 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) SDRAM - Mobile 133MHz 6ns -
IS42RM32400H-75BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 90TFBGA
Tape & Reel (TR) 2.3 V ~ 3 V -40°C ~ 85°C (TA) SDRAM - Mobile 133MHz 6ns -
IS45S32400F-7BLA1-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 90TFBGA
Tape & Reel (TR) 3 V ~ 3.6 V -40°C ~ 85°C (TA) SDRAM 143MHz 5.4ns -
IS42VM32400H-6BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 90TFBGA
Tape & Reel (TR) 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) SDRAM - Mobile 166MHz 5.5ns -
W9812G2KB-6
Winbond Electronics
Enquête
-
-
MOQ: 240  MPQ: 1
IC DRAM 128M PARALLEL 90TFBGA
Tray 3 V ~ 3.6 V 0°C ~ 70°C (TA) SDRAM 166MHz 5ns -
IS43LR32400G-6BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 90TFBGA
Tape & Reel (TR) 1.7 V ~ 1.95 V -40°C ~ 85°C (TA) SDRAM - Mobile LPDDR 166MHz 5.5ns 15ns
IS42S32400F-7BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 90TFBGA
Tape & Reel (TR) 3 V ~ 3.6 V -40°C ~ 85°C (TA) SDRAM 143MHz 5.4ns -
IS42SM32400H-6BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 90TFBGA
Tape & Reel (TR) 2.7 V ~ 3.6 V -40°C ~ 85°C (TA) SDRAM - Mobile 166MHz 5.5ns -
IS42RM32400H-6BLI-TR
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 2500  MPQ: 1
IC DRAM 128M PARALLEL 90TFBGA
Tape & Reel (TR) 2.3 V ~ 2.7 V -40°C ~ 85°C (TA) SDRAM - Mobile 166MHz 5.5ns -