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- Operating Temperature：
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- Technology：
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- Conditions sélectionnées:
Découvrez les produits 34
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Memory Size | Technology | Memory Format | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Operating Temperature | Memory Size | Technology | Memory Format | Clock Frequency | Access Time | Write Cycle Time - Word, Page | |
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Alliance Memory，Inc. |
240
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 8M PARALLEL 90TFBGA
|
Tray | -40°C ~ 85°C (TA) | 8Mb (1M x 8) | SRAM - Asynchronous | SRAM | - | 10ns | 10ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 64M PARALLEL 90TFBGA
|
Tape & Reel (TR) | -40°C ~ 85°C (TA) | 64Mb (2M x 32) | SDRAM - Mobile | DRAM | 133MHz | 6ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 64M PARALLEL 90TFBGA
|
Tape & Reel (TR) | -40°C ~ 85°C (TA) | 64Mb (2M x 32) | SDRAM - Mobile | DRAM | 166MHz | 5.5ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC DRAM 64M PARALLEL 90TFBGA
|
Tray | -40°C ~ 85°C (TA) | 64Mb (2M x 32) | SDRAM - Mobile | DRAM | 133MHz | 6ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC DRAM 64M PARALLEL 90TFBGA
|
Tray | -40°C ~ 85°C (TA) | 64Mb (2M x 32) | SDRAM - Mobile | DRAM | 166MHz | 5.5ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 128M PARALLEL 90TFBGA
|
Tape & Reel (TR) | -40°C ~ 85°C (TA) | 128Mb (4M x 32) | SDRAM - Mobile | DRAM | 133MHz | 6ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 128M PARALLEL 90TFBGA
|
Tape & Reel (TR) | -40°C ~ 85°C (TA) | 128Mb (4M x 32) | SDRAM - Mobile | DRAM | 166MHz | 5.5ns | - | ||
|
|
|
Winbond Electronics |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 256M PARALLEL 90TFBGA
|
Tape & Reel (TR) | 0°C ~ 70°C (TA) | 256Mb (8M x 32) | SDRAM | DRAM | 133MHz | 5.4ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC DRAM 128M PARALLEL 90TFBGA
|
Tray | -40°C ~ 85°C (TA) | 128Mb (4M x 32) | SDRAM - Mobile | DRAM | 133MHz | 6ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC DRAM 128M PARALLEL 90TFBGA
|
Tray | -40°C ~ 85°C (TA) | 128Mb (4M x 32) | SDRAM - Mobile | DRAM | 166MHz | 5.5ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 256M PARALLEL 90TFBGA
|
Tape & Reel (TR) | -40°C ~ 85°C (TA) | 256Mb (8M x 32) | SDRAM - Mobile | DRAM | 133MHz | 6ns | - | ||
|
|
|
Winbond Electronics |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC DRAM 256M PARALLEL 90TFBGA
|
Tray | 0°C ~ 70°C (TA) | 256Mb (8M x 32) | SDRAM | DRAM | 133MHz | 5.4ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 256M PARALLEL 90TFBGA
|
Tape & Reel (TR) | -40°C ~ 85°C (TA) | 256Mb (8M x 32) | SDRAM - Mobile | DRAM | 166MHz | 5.5ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC DRAM 256M PARALLEL 90TFBGA
|
Tray | -40°C ~ 85°C (TA) | 256Mb (8M x 32) | SDRAM - Mobile | DRAM | 133MHz | 6ns | - | ||
|
|
|
Winbond Electronics |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 256M PARALLEL 90TFBGA
|
Tape & Reel (TR) | -40°C ~ 85°C (TA) | 256Mb (8M x 32) | SDRAM | DRAM | 166MHz | 5ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC DRAM 256M PARALLEL 90TFBGA
|
Tray | -40°C ~ 85°C (TA) | 256Mb (8M x 32) | SDRAM - Mobile | DRAM | 166MHz | 5.5ns | - | ||
|
|
|
Winbond Electronics |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC DRAM 256M PARALLEL 90TFBGA
|
Tray | -40°C ~ 85°C (TA) | 256Mb (8M x 32) | SDRAM | DRAM | 166MHz | 5ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tape & Reel (TR) | 0°C ~ 70°C (TA) | 512Mb (16M x 32) | SDRAM - Mobile | DRAM | 133MHz | 6ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 2500 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tape & Reel (TR) | -40°C ~ 85°C (TA) | 512Mb (16M x 32) | SDRAM - Mobile | DRAM | 133MHz | 6ns | - | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
Enquête
|
- |
-
|
MOQ: 240 MPQ: 1
|
IC DRAM 512M PARALLEL 90TFBGA
|
Tray | 0°C ~ 70°C (TA) | 512Mb (16M x 32) | SDRAM - Mobile | DRAM | 133MHz | 6ns | - |
