Mémoire - Zui Ai Technology（Taiwan）Company.

Conditions sélectionnées:

Découvrez les produits 212

Comparer Ajouter au panier Ajouter au devis

Page 1 / 11

Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Memory Size	Technology	Clock Frequency	Access Time	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Memory Size	Technology	Clock Frequency	Access Time	Write Cycle Time - Word, Page
	IS43TR16128CL-125KBL-TR	ISSI，Integrated Silicon Solution Inc	4,500	3 jours	-	IC DRAM 2G PARALLEL 96TWBGA MOQ: 1500 MPQ: 1	IC DRAM 2G PARALLEL 96TWBGA	Tape & Reel (TR)	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	SDRAM - DDR3L	800MHz	20ns	15ns
	IS43TR16128CL-125KBL-TR	ISSI，Integrated Silicon Solution Inc	6,553	3 jours	-	IC DRAM 2G PARALLEL 96TWBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 96TWBGA	Cut Tape (CT)	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	SDRAM - DDR3L	800MHz	20ns	15ns
	IS43TR16128CL-125KBL-TR	ISSI，Integrated Silicon Solution Inc	6,553	3 jours	-	IC DRAM 2G PARALLEL 96TWBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 96TWBGA	-	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	SDRAM - DDR3L	800MHz	20ns	15ns
	IS43TR16256AL-125KBL	ISSI，Integrated Silicon Solution Inc	14,228	3 jours	-	IC DRAM 4G PARALLEL 96TWBGA MOQ: 1 MPQ: 1	IC DRAM 4G PARALLEL 96TWBGA	Tray	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	4Gb (256M x 16)	SDRAM - DDR3L	800MHz	20ns	15ns
	IS43TR16128B-15HBLI	ISSI，Integrated Silicon Solution Inc	6,157	3 jours	-	IC DRAM 2G PARALLEL 96TWBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 96TWBGA	Tray	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	2Gb (128M x 16)	SDRAM - DDR3	667MHz	20ns	15ns
	IS43TR16640B-125JBL	ISSI，Integrated Silicon Solution Inc	839	3 jours	-	IC DRAM 1G PARALLEL 96TWBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 96TWBGA	Tray	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	1Gb (64M x 16)	SDRAM - DDR3	800MHz	20ns	15ns
	IS43TR16128BL-125KBL	ISSI，Integrated Silicon Solution Inc	5,258	3 jours	-	IC DRAM 2G PARALLEL 96TWBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 96TWBGA	Tray	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	SDRAM - DDR3L	800MHz	20ns	15ns
	IS43TR16640B-125JBLI	ISSI，Integrated Silicon Solution Inc	118	3 jours	-	IC DRAM 1G PARALLEL 96TWBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 96TWBGA	Tray	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	1Gb (64M x 16)	SDRAM - DDR3	800MHz	20ns	15ns
	IS43TR16640BL-125JBLI	ISSI，Integrated Silicon Solution Inc	380	3 jours	-	IC DRAM 1G PARALLEL 96TWBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 96TWBGA	Tray	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	1Gb (64M x 16)	SDRAM - DDR3L	800MHz	20ns	15ns
	IS43TR16128CL-125KBLI	ISSI，Integrated Silicon Solution Inc	536	3 jours	-	IC DRAM 2G PARALLEL 96TWBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 96TWBGA	Tray	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	2Gb (128M x 16)	SDRAM - DDR3L	800MHz	20ns	15ns
	IS43TR16128B-125KBLI	ISSI，Integrated Silicon Solution Inc	650	3 jours	-	IC DRAM 2G PARALLEL 96TWBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 96TWBGA	Tray	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	2Gb (128M x 16)	SDRAM - DDR3	800MHz	20ns	15ns
	IS43TR16128B-125KBL	ISSI，Integrated Silicon Solution Inc	367	3 jours	-	IC DRAM 2G PARALLEL 96TWBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 96TWBGA	Tray	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	SDRAM - DDR3	800MHz	20ns	15ns
	IS43TR16128BL-15HBLI	ISSI，Integrated Silicon Solution Inc	170	3 jours	-	IC DRAM 2G PARALLEL 96TWBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 96TWBGA	Tray	1.283 V ~ 1.45 V	-40°C ~ 95°C (TC)	2Gb (128M x 16)	SDRAM - DDR3L	667MHz	20ns	15ns
	IS43TR16128C-15HBLI	ISSI，Integrated Silicon Solution Inc	190	3 jours	-	IC DRAM 2G PARALLEL 96TWBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 96TWBGA	Tray	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	2Gb (128M x 16)	SDRAM - DDR3	667MHz	20ns	15ns
	IS46TR16640ED-15HBLA1	ISSI，Integrated Silicon Solution Inc	47	3 jours	-	IC DRAM 1G PARALLEL 96TWBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 96TWBGA	Tray	1.425 V ~ 1.575 V	-40°C ~ 95°C (TC)	1Gb (64M x 16)	SDRAM - DDR3	667MHz	20ns	15ns
	IS46TR16640ED-15HBLA2	ISSI，Integrated Silicon Solution Inc	67	3 jours	-	IC DRAM 1G PARALLEL 96TWBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 96TWBGA	Tray	1.425 V ~ 1.575 V	-40°C ~ 105°C (TC)	1Gb (64M x 16)	SDRAM - DDR3	667MHz	20ns	15ns
	IS43TR16640BL-125JBL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 1G PARALLEL 96TWBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 96TWBGA	Tray	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	1Gb (64M x 16)	SDRAM - DDR3L	800MHz	20ns	15ns
	IS43TR16128B-15HBL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 2G PARALLEL 96TWBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 96TWBGA	Tray	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	SDRAM - DDR3	667MHz	20ns	15ns
	IS43TR16128BL-15HBL	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 2G PARALLEL 96TWBGA MOQ: 1 MPQ: 1	IC DRAM 2G PARALLEL 96TWBGA	Tray	1.283 V ~ 1.45 V	0°C ~ 95°C (TC)	2Gb (128M x 16)	SDRAM - DDR3L	667MHz	20ns	15ns
	IS43TR16640B-15GBL-TR	ISSI，Integrated Silicon Solution Inc	Enquête	-	-	IC DRAM 1G PARALLEL 96TWBGA MOQ: 1500 MPQ: 1	IC DRAM 1G PARALLEL 96TWBGA	Tape & Reel (TR)	1.425 V ~ 1.575 V	0°C ~ 95°C (TC)	1Gb (64M x 16)	SDRAM - DDR3	667MHz	20ns	15ns