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- Conditions sélectionnées:
Découvrez les produits 610
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
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Image | Numéro de pièce | Fabricant | Quantité | Délai de livraison | Prix unitaire | Acheter | Description | Packaging | Series | Voltage - Supply | Operating Temperature | Memory Size | Memory Type | Technology | Memory Format | Clock Frequency | Access Time | Memory Interface | Write Cycle Time - Word, Page | |
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|
Alliance Memory，Inc. |
786
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 16M PARALLEL 48TSOP I
|
Tray | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 16Mb (1M x 16) | Volatile | SRAM - Asynchronous | SRAM | - | 55ns | Parallel | 55ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
9,843
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 16M PARALLEL 48TSOP I
|
Tray | - | 2.4 V ~ 3.6 V | -40°C ~ 85°C (TA) | 16Mb (1M x 16) | Volatile | SRAM - Asynchronous | SRAM | - | 10ns | Parallel | 10ns | ||
|
|
|
Alliance Memory，Inc. |
496
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 16M PARALLEL 48TSOP I
|
Tray | - | 3 V ~ 3.6 V | -40°C ~ 85°C (TA) | 16Mb (1M x 16) | Volatile | SRAM - Asynchronous | SRAM | - | 10ns | Parallel | 10ns | ||
|
|
|
Alliance Memory，Inc. |
407
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 32M PARALLEL 48TSOP I
|
Tray | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 32Mb (2M x 16) | Volatile | SRAM - Asynchronous | SRAM | - | 55ns | Parallel | 55ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
986
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 32M PARALLEL 48TSOP I
|
Bulk | - | 2.4 V ~ 3.6 V | -40°C ~ 85°C (TA) | 32Mb (2M x 16) | Volatile | SRAM - Asynchronous | SRAM | - | 10ns | Parallel | 10ns | ||
|
|
|
Alliance Memory，Inc. |
538
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 64M PARALLEL 48TSOP I
|
Tray | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 64Mb (4M x 16) | Volatile | SRAM - Asynchronous | SRAM | - | 55ns | Parallel | 55ns | ||
|
|
|
ISSI，Integrated Silicon Solution Inc |
210
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 16M PARALLEL 48TSOP I
|
Tray | - | 2.4 V ~ 3.6 V | -40°C ~ 85°C (TA) | 16Mb (1M x 16) | Volatile | SRAM - Asynchronous | SRAM | - | 10ns | Parallel | 10ns | ||
|
|
|
Renesas Electronics America |
288
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 8M PARALLEL 48TSOP
|
Tray | - | 2.4 V ~ 3.6 V | -40°C ~ 85°C (TA) | 8Mb (1M x 8，512K x 16) | Volatile | SRAM | SRAM | - | 45ns | Parallel | 45ns | ||
|
|
|
Renesas Electronics America |
321
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 16M PARALLEL 48TSOP
|
Tube | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 16Mb (2M x 8，1M x 16) | Volatile | SRAM | SRAM | - | 55ns | Parallel | 55ns | ||
|
|
|
Toshiba Memory America，Inc. |
192
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 4G PARALLEL 48TSOP I
|
Tray | Benand | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | 4Gb (512M x 8) | Non-Volatile | FLASH - NAND (SLC) | Flash | - | 25ns | Parallel | 25ns | ||
|
|
|
Toshiba Memory America，Inc. |
187
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 4G PARALLEL 48TSOP I
|
Tray | - | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | 4Gb (512M x 8) | Non-Volatile | FLASH - NAND (SLC) | Flash | - | 25ns | Parallel | 25ns | ||
|
|
|
Toshiba Memory America，Inc. |
182
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 4G PARALLEL 48TSOP I
|
Tray | Benand | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 4Gb (512M x 8) | Non-Volatile | FLASH - NAND (SLC) | Flash | - | 25ns | Parallel | 25ns | ||
|
|
|
Toshiba Memory America，Inc. |
480
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC FLASH 32G PARALLEL 48TSOP I
|
Tray | - | 2.7 V ~ 3.6 V | 0°C ~ 70°C (TA) | 32Gb (4G x 8) | Non-Volatile | FLASH - NAND (SLC) | Flash | - | 25ns | Parallel | 25ns | ||
|
|
|
Renesas Electronics America |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC SRAM 8M PARALLEL 48TSOP
|
Tape & Reel (TR) | - | 2.4 V ~ 3.6 V | -40°C ~ 85°C (TA) | 8Mb (1M x 8，512K x 16) | Volatile | SRAM | SRAM | - | 45ns | Parallel | 45ns | ||
|
|
|
Renesas Electronics America |
900
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 8M PARALLEL 48TSOP
|
Cut Tape (CT) | - | 2.4 V ~ 3.6 V | -40°C ~ 85°C (TA) | 8Mb (1M x 8，512K x 16) | Volatile | SRAM | SRAM | - | 45ns | Parallel | 45ns | ||
|
|
|
Renesas Electronics America |
900
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 8M PARALLEL 48TSOP
|
- | - | 2.4 V ~ 3.6 V | -40°C ~ 85°C (TA) | 8Mb (1M x 8，512K x 16) | Volatile | SRAM | SRAM | - | 45ns | Parallel | 45ns | ||
|
|
|
Renesas Electronics America |
Enquête
|
- |
-
|
MOQ: 1000 MPQ: 1
|
IC SRAM 16M PARALLEL 48TSOP
|
Tape & Reel (TR) | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 16Mb (2M x 8，1M x 16) | Volatile | SRAM | SRAM | - | 55ns | Parallel | 55ns | ||
|
|
|
Renesas Electronics America |
990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 16M PARALLEL 48TSOP
|
Cut Tape (CT) | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 16Mb (2M x 8，1M x 16) | Volatile | SRAM | SRAM | - | 55ns | Parallel | 55ns | ||
|
|
|
Renesas Electronics America |
990
|
3 jours |
-
|
MOQ: 1 MPQ: 1
|
IC SRAM 16M PARALLEL 48TSOP
|
- | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 16Mb (2M x 8，1M x 16) | Volatile | SRAM | SRAM | - | 55ns | Parallel | 55ns | ||
|
|
|
Renesas Electronics America |
1,000
|
3 jours |
-
|
MOQ: 1000 MPQ: 1
|
IC SRAM 32M PARALLEL 48TSOP I
|
Tape & Reel (TR) | - | 2.7 V ~ 3.6 V | -40°C ~ 85°C (TA) | 32Mb (4M x 8，2M x 16) | Volatile | SRAM | SRAM | - | 55ns | Parallel | 55ns |
