Mémoire - Zui Ai Technology（Taiwan）Company.

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Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Memory Interface	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Voltage - Supply	Operating Temperature	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Memory Interface	Write Cycle Time - Word, Page
	W9725G6KB-25 TR	Winbond Electronics	2,500	3 jours	-	IC DRAM 256M PARALLEL 84WBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 84WBGA	Tape & Reel (TR)	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	256Mb (16M x 16)	Volatile	SDRAM - DDR2	DRAM	200MHz	400ps	Parallel	15ns
	W9725G6KB-25 TR	Winbond Electronics	3,360	3 jours	-	IC DRAM 256M PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 84WBGA	Cut Tape (CT)	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	256Mb (16M x 16)	Volatile	SDRAM - DDR2	DRAM	200MHz	400ps	Parallel	15ns
	W9725G6KB-25 TR	Winbond Electronics	3,360	3 jours	-	IC DRAM 256M PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 84WBGA	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	256Mb (16M x 16)	Volatile	SDRAM - DDR2	DRAM	200MHz	400ps	Parallel	15ns
	W9751G6KB-25	Winbond Electronics	20,933	3 jours	-	IC DRAM 512M PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 84WBGA	Tray	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	512Mb (32M x 16)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	Parallel	15ns
	W9725G6KB-25	Winbond Electronics	3,533	3 jours	-	IC DRAM 256M PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 84WBGA	Tray	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	256Mb (16M x 16)	Volatile	SDRAM - DDR2	DRAM	200MHz	400ps	Parallel	15ns
	W9751G6KB25I	Winbond Electronics	700	3 jours	-	IC DRAM 512M PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 84WBGA	Tray	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	512Mb (32M x 16)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	Parallel	15ns
	W971GG6SB-25	Winbond Electronics	838	3 jours	-	IC DRAM 1G PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84WBGA	Tray	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	1Gb (64M x 16)	Volatile	SDRAM - DDR2	DRAM	200MHz	400ps	Parallel	15ns
	IS43DR16640B-25DBL	ISSI，Integrated Silicon Solution Inc	615	3 jours	-	IC DRAM 1G PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84WBGA	Tray	1.7 V ~ 1.9 V	0°C ~ 70°C (TA)	1Gb (64M x 16)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	Parallel	15ns
	W971GG6SB25I	Winbond Electronics	812	3 jours	-	IC DRAM 1G PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84WBGA	Tray	1.7 V ~ 1.9 V	-40°C ~ 95°C (TC)	1Gb (64M x 16)	Volatile	SDRAM - DDR2	DRAM	200MHz	400ps	Parallel	15ns
	IS43DR16640B-25DBLI	ISSI，Integrated Silicon Solution Inc	635	3 jours	-	IC DRAM 1G PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84WBGA	Tray	1.7 V ~ 1.9 V	-40°C ~ 85°C (TA)	1Gb (64M x 16)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	Parallel	15ns
	W9751G6KB-25 TR	Winbond Electronics	Enquête	-	-	IC DRAM 512M PARALLEL 84WBGA MOQ: 2500 MPQ: 1	IC DRAM 512M PARALLEL 84WBGA	Tape & Reel (TR)	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	512Mb (32M x 16)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	Parallel	15ns
	W9751G6KB-25 TR	Winbond Electronics	3,259	3 jours	-	IC DRAM 512M PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 84WBGA	Cut Tape (CT)	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	512Mb (32M x 16)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	Parallel	15ns
	W9751G6KB-25 TR	Winbond Electronics	3,259	3 jours	-	IC DRAM 512M PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 84WBGA	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	512Mb (32M x 16)	Volatile	SDRAM - DDR2	DRAM	400MHz	400ps	Parallel	15ns
	W971GG6SB-25 TR	Winbond Electronics	Enquête	-	-	IC DRAM 1G PARALLEL 84WBGA MOQ: 2500 MPQ: 1	IC DRAM 1G PARALLEL 84WBGA	Tape & Reel (TR)	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	1Gb (64M x 16)	Volatile	SDRAM - DDR2	DRAM	200MHz	400ps	Parallel	15ns
	W971GG6SB-25 TR	Winbond Electronics	2,300	3 jours	-	IC DRAM 1G PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84WBGA	Cut Tape (CT)	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	1Gb (64M x 16)	Volatile	SDRAM - DDR2	DRAM	200MHz	400ps	Parallel	15ns
	W971GG6SB-25 TR	Winbond Electronics	2,300	3 jours	-	IC DRAM 1G PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84WBGA	-	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	1Gb (64M x 16)	Volatile	SDRAM - DDR2	DRAM	200MHz	400ps	Parallel	15ns
	W972GG6KB-25	Winbond Electronics	38	3 jours	-	IC DDR2 SDRAM 2GBIT 2.5NS 84BGA MOQ: 1 MPQ: 1	IC DDR2 SDRAM 2GBIT 2.5NS 84BGA	Tray	-	-	-	-	-	-	-	-	-	-
	W971GG6SB-18	Winbond Electronics	91	3 jours	-	IC DRAM 1G PARALLEL 84WBGA MOQ: 1 MPQ: 1	IC DRAM 1G PARALLEL 84WBGA	Tray	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	1Gb (64M x 16)	Volatile	SDRAM - DDR2	DRAM	533MHz	350ps	Parallel	15ns
	W9725G6KB-18 TR	Winbond Electronics	Enquête	-	-	IC DRAM 256M PARALLEL 84WBGA MOQ: 2500 MPQ: 1	IC DRAM 256M PARALLEL 84WBGA	Tape & Reel (TR)	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	256Mb (16M x 16)	Volatile	SDRAM - DDR2	DRAM	533MHz	350ps	Parallel	15ns
	W9725G6KB-18	Winbond Electronics	Enquête	-	-	IC DRAM 256M PARALLEL 84WBGA MOQ: 209 MPQ: 1	IC DRAM 256M PARALLEL 84WBGA	Tray	1.7 V ~ 1.9 V	0°C ~ 85°C (TC)	256Mb (16M x 16)	Volatile	SDRAM - DDR2	DRAM	533MHz	350ps	Parallel	15ns