Mémoire - Zui Ai Technology（Taiwan）Company.

Packaging：

Series：

Voltage - Supply：

Operating Temperature：

Memory Size：

Memory Type：

Technology：

Memory Format：

Clock Frequency：

Access Time：

Write Cycle Time - Word, Page：

Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Write Cycle Time - Word, Page
Image	Numéro de pièce	Fabricant	Quantité	Délai de livraison	Prix unitaire	Acheter	Description	Packaging	Series	Voltage - Supply	Operating Temperature	Memory Size	Memory Type	Technology	Memory Format	Clock Frequency	Access Time	Write Cycle Time - Word, Page
	MT48LC4M32B2TG-6A:L	Alliance Memory，Inc.	1,960	3 jours	-	IC DRAM 128M PARALLEL 86TSOP II MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 86TSOP II	Tray	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	128Mb (4M x 32)	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC4M32B2TG-6A IT:L	Alliance Memory，Inc.	1,611	3 jours	-	IC DRAM 128M PARALLEL 86TSOP II MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 86TSOP II	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	128Mb (4M x 32)	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	IS42S32800J-7TL	ISSI，Integrated Silicon Solution Inc	195	3 jours	-	IC DRAM 256M PARALLEL 86TSOP II MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 86TSOP II	Tray	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	256Mb (8M x 32)	Volatile	SDRAM	DRAM	143MHz	5.4ns	-
	IS42S32200L-7TL	ISSI，Integrated Silicon Solution Inc	665	3 jours	-	IC DRAM 64M PARALLEL 86TSOP II MOQ: 1 MPQ: 1	IC DRAM 64M PARALLEL 86TSOP II	Tray	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	64Mb (2M x 32)	Volatile	SDRAM	DRAM	143MHz	5.4ns	-
	AS4C4M32SA-7TCN	Alliance Memory，Inc.	900	3 jours	-	IC DRAM 128M PARALLEL 86TSOP II MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 86TSOP II	Tray	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	128Mb (4M x 32)	Volatile	SDRAM	DRAM	143MHz	5.4ns	2ns
	AS4C4M32SA-6TIN	Alliance Memory，Inc.	407	3 jours	-	IC DRAM 128M PARALLEL 86TSOP II MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 86TSOP II	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	128Mb (4M x 32)	Volatile	SDRAM	DRAM	166MHz	5.4ns	2ns
	IS42S32800J-7TLI	ISSI，Integrated Silicon Solution Inc	1,602	3 jours	-	IC DRAM 256M PARALLEL 86TSOP II MOQ: 1 MPQ: 1	IC DRAM 256M PARALLEL 86TSOP II	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	256Mb (8M x 32)	Volatile	SDRAM	DRAM	143MHz	5.4ns	-
	IS42S32160F-7TLI	ISSI，Integrated Silicon Solution Inc	219	3 jours	-	IC DRAM 512M PARALLEL 86TSOP II MOQ: 1 MPQ: 1	IC DRAM 512M PARALLEL 86TSOP II	Tube	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	512Mb (16M x 32)	Volatile	SDRAM	DRAM	143MHz	5.4ns	-
	IS42S32400F-7TL	ISSI，Integrated Silicon Solution Inc	355	3 jours	-	IC DRAM 128M PARALLEL 86TSOP II MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 86TSOP II	Tray	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	128Mb (4M x 32)	Volatile	SDRAM	DRAM	143MHz	5.4ns	-
	MT48LC4M32B2P-6A:L TR	Micron Technology Inc.	2,000	3 jours	-	IC DRAM 128M PARALLEL 86TSOP II MOQ: 2000 MPQ: 1	IC DRAM 128M PARALLEL 86TSOP II	Tape & Reel (TR)	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	128Mb (4M x 32)	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC4M32B2P-6A:L TR	Micron Technology Inc.	3,817	3 jours	-	IC DRAM 128M PARALLEL 86TSOP II MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 86TSOP II	Cut Tape (CT)	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	128Mb (4M x 32)	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC4M32B2P-6A:L TR	Micron Technology Inc.	3,817	3 jours	-	IC DRAM 128M PARALLEL 86TSOP II MOQ: 1 MPQ: 1	IC DRAM 128M PARALLEL 86TSOP II	-	-	3 V ~ 3.6 V	0°C ~ 70°C (TA)	128Mb (4M x 32)	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	AS4C16M32SC-7TIN	Alliance Memory，Inc.	104	3 jours	-	512M - C DIE NEW 16M X 32 3.3V 1 MOQ: 1 MPQ: 1	512M - C DIE NEW 16M X 32 3.3V 1	Tray	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	512Mb (16M x 32)	Volatile	SDRAM	DRAM	133MHz	17ns	15ns
	MT48LC2M32B2P-6A AIT:J TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 64M PARALLEL 86TSOP II MOQ: 2000 MPQ: 1	IC DRAM 64M PARALLEL 86TSOP II	Tape & Reel (TR)	Automotive，AEC-Q100	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	64Mb (2M x 32)	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC2M32B2P-6A AIT:J TR	Micron Technology Inc.	1,998	3 jours	-	IC DRAM 64M PARALLEL 86TSOP II MOQ: 1 MPQ: 1	IC DRAM 64M PARALLEL 86TSOP II	Cut Tape (CT)	Automotive，AEC-Q100	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	64Mb (2M x 32)	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC2M32B2P-6A AIT:J TR	Micron Technology Inc.	1,998	3 jours	-	IC DRAM 64M PARALLEL 86TSOP II MOQ: 1 MPQ: 1	IC DRAM 64M PARALLEL 86TSOP II	-	Automotive，AEC-Q100	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	64Mb (2M x 32)	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC2M32B2P-6A AAT:J TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 64M PARALLEL 86TSOP II MOQ: 2000 MPQ: 1	IC DRAM 64M PARALLEL 86TSOP II	Tape & Reel (TR)	Automotive，AEC-Q100	3 V ~ 3.6 V	-40°C ~ 105°C (TA)	64Mb (2M x 32)	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC2M32B2P-6A AAT:J TR	Micron Technology Inc.	1,787	3 jours	-	IC DRAM 64M PARALLEL 86TSOP II MOQ: 1 MPQ: 1	IC DRAM 64M PARALLEL 86TSOP II	Cut Tape (CT)	Automotive，AEC-Q100	3 V ~ 3.6 V	-40°C ~ 105°C (TA)	64Mb (2M x 32)	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC2M32B2P-6A AAT:J TR	Micron Technology Inc.	3,706	3 jours	-	IC DRAM 64M PARALLEL 86TSOP II MOQ: 1 MPQ: 1	IC DRAM 64M PARALLEL 86TSOP II	-	Automotive，AEC-Q100	3 V ~ 3.6 V	-40°C ~ 105°C (TA)	64Mb (2M x 32)	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns
	MT48LC4M32B2P-6A XIT:L TR	Micron Technology Inc.	Enquête	-	-	IC DRAM 128M PARALLEL 86TSOP II MOQ: 1000 MPQ: 1	IC DRAM 128M PARALLEL 86TSOP II	Tape & Reel (TR)	-	3 V ~ 3.6 V	-40°C ~ 85°C (TA)	128Mb (4M x 32)	Volatile	SDRAM	DRAM	167MHz	5.4ns	12ns

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