Fabricant:
Voltage - Supply:
Clock Frequency:
Write Cycle Time - Word, Page:
Découvrez les produits 5
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Voltage - Supply Operating Temperature Memory Size Clock Frequency Write Cycle Time - Word, Page
AS4C2M32D1A-5BCNTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 64M PARALLEL 144LFBGA
2.3 V ~ 2.7 V 0°C ~ 70°C (TA) 64Mb (2M x 32) 200MHz 15ns
AS4C2M32D1A-5BINTR
Alliance Memory,Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC DRAM 64M PARALLEL 144LFBGA
2.3 V ~ 2.7 V -40°C ~ 85°C (TA) 64Mb (2M x 32) 200MHz 15ns
IS43R32400E-4B
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 0  MPQ: 1
IC DRAM 128M PARALLEL 144LFBGA
2.4 V ~ 2.6 V 0°C ~ 70°C 128Mb (4M x 32) 250MHz 16ns
IS43R32800D-5B
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 0  MPQ: 1
IC DRAM 256M PARALLEL 144LFBGA
2.3 V ~ 2.7 V 0°C ~ 70°C 256Mb (8M x 32) 200MHz 15ns
IS43R32800D-5BI
ISSI,Integrated Silicon Solution Inc
Enquête
-
-
MOQ: 0  MPQ: 1
IC DRAM 256M PARALLEL 144LFBGA
2.3 V ~ 2.7 V -40°C ~ 85°C (TA) 256Mb (8M x 32) 200MHz 15ns