Conditions sélectionnées:
Découvrez les produits 14
Image Numéro de pièce Fabricant Quantité Délai de livraison Prix ​​unitaire Acheter Description Packaging Voltage - Supply Memory Size Technology
MT29RZ4B2DZZHHWD-18I.84F TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1000  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
Tape & Reel (TR) 1.8V 4Gb (128M x 32)(NAND),2G (64M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2
MT29RZ4B2DZZHHWD-18I.84F TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
Cut Tape (CT) 1.8V 4Gb (128M x 32)(NAND),2G (64M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2
MT29RZ4B2DZZHHWD-18I.84F TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
- 1.8V 4Gb (128M x 32)(NAND),2G (64M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2
MT29RZ4B4DZZMGWD-18I.80C TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1000  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
Tape & Reel (TR) 1.8V 4Gb (128M x 32)(NAND),4G (128M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2
MT29RZ4B4DZZMGWD-18I.80C TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
Cut Tape (CT) 1.8V 4Gb (128M x 32)(NAND),4G (128M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2
MT29RZ4B4DZZMGWD-18I.80C TR
Micron Technology Inc.
1,000
3 jours
-
MOQ: 1  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
- 1.8V 4Gb (128M x 32)(NAND),4G (128M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2
MT29RZ2B1DZZHGWD-18I.83G TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC FLASH RAM 2G PARALLEL 533MHZ
Tape & Reel (TR) 1.8V 2Gb (256M x 8)(NAND),1G (32M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2
MT29RZ2B1DZZHGWD-18I.83G TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FLASH RAM 2G PARALLEL 533MHZ
Cut Tape (CT) 1.8V 2Gb (256M x 8)(NAND),1G (32M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2
MT29RZ2B1DZZHGWD-18I.83G TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FLASH RAM 2G PARALLEL 533MHZ
- 1.8V 2Gb (256M x 8)(NAND),1G (32M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2
MT29AZ5A3CHHWD-18AIT.84F
Micron Technology Inc.
Enquête
-
-
MOQ: 1  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
Tray 1.7 V ~ 1.9 V 4Gb (512M x 8)(NAND),2Gb (128M x 16)(LPDDR2) FLASH - NAND,Mobile LPDRAM
MT29AZ5A3CHHWD-18AIT.84F TR
Micron Technology Inc.
Enquête
-
-
MOQ: 1000  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
Tape & Reel (TR) 1.7 V ~ 1.9 V 4Gb (512M x 8)(NAND),2Gb (128M x 16)(LPDDR2) FLASH - NAND,Mobile LPDRAM
MT29RZ4B2DZZHHWD-18I.84F
Micron Technology Inc.
Enquête
-
-
MOQ: 1440  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
Tray 1.8V 4Gb (128M x 32)(NAND),2G (64M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2
MT29RZ2B1DZZHGWD-18I.83G
Micron Technology Inc.
Enquête
-
-
MOQ: 1440  MPQ: 1
IC FLASH RAM 2G PARALLEL 533MHZ
Tray 1.8V 2Gb (256M x 8)(NAND),1G (32M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2
MT29RZ4B4DZZMGWD-18I.80C
Micron Technology Inc.
Enquête
-
-
MOQ: 1440  MPQ: 1
IC FLASH RAM 4G PARALLEL 533MHZ
Tray 1.8V 4Gb (128M x 32)(NAND),4G (128M x 32)(LPDDR2) FLASH - NAND,DRAM - LPDDR2